Silicon phosphide semiconductor device
A method for forming source/drain regions in a semiconductor device and a semiconductor device including source/drain regions formed by the method are disclosed. In an embodiment, a method includes etching a semiconductor fin to form a first recess, the semiconductor fin defining sidewalls and a bottom surface of the first recess, the semiconductor fin extending in a first direction; forming a source/drain region in the first recess, the source/drain region including a single continuous material extending from a bottom surface of the first recess to above a top surface of the semiconductor fin, a precursor gas for forming the source/drain region including phosphine (PH 3 ) and at least one of arsine (AsH 3 ) or monomethylsilane (CH 6 Si); and forming a gate over the semiconductor fin adjacent the source/drain region, the gate extending in a second direction perpendicular the first direction.
1. A semiconductor device comprising: a first semiconductor fin extending from a substrate, the first semiconductor fin extending in a first direction; a second semiconductor fin extending from the substrate, the second semiconductor fin extending parallel to the first direction; a first source/drain region in the first semiconductor fin, the first source/drain region comprising a single continuous material extending from a bottom surface of the first source/drain region to above a top surface of the first semiconductor fin, the single continuous material comprising SiP:C:As; a second source/drain region in the second semiconductor fin, the second source/drain region comprising the single continuous material, wherein the single continuous material of the second source/drain region is merged with the single continuous material of the first source/drain region; a gate over the first semiconductor fin adjacent the first source/drain region, the gate extending in a second direction perpendicular to the first direction; a gate seal spacer adjacent the gate, and a gate spacer adjacent the gate seal spacer, wherein the first source/drain region extends below the gate spacer in a third direction perpendicular to a major surface of the substrate, wherein the first source/drain region contacts a vertical sidewall of the gate seal spacer, and a top surface of the gate seal spacer, and a sidewall of the gate space.
2. The semiconductor device of claim 1 , wherein the bottom surface of the first source/drain region is disposed a distance from 35 to 60 nm below the top surface of the first semiconductor fin, and wherein and the first source/drain region has a width from 20 to 35 nm.
3. The semiconductor device of claim 1 , wherein the single continuous material has a phosphorus concentration from 1×10 21 to 5×10 21 atoms/cm 3 and a carbon concentration from 0.1 to 2 atomic percent.
4. The semiconductor device of claim 1 , wherein the single continuous material has a phosphorus concentration from 1×10 21 to 5×10 21 atoms/cm 3 and an arsenic concentration from 1×10 20 to 3×10 21 atoms/cm 3 .
5. The semiconductor device of claim 1 , wherein the gate seal spacer and the gate spacer are between the first source/drain region and the second source/drain region in a direction parallel to the second direction.
6. The semiconductor device of claim 1 , further comprising a first dielectric layer between the first semiconductor fin and each of the gate seal spacer and the gate spacer, wherein the first source/drain region contacts a vertical sidewall of the first dielectric layer.
7. The semiconductor device of claim 6 , wherein the first dielectric layer directly contacts the gate.
8. A semiconductor device comprising:
a fin extending from a substrate;
a gate stack over the fin;
a gate seal spacer extending along a sidewall of the gate stack;
a lightly doped source/drain (LDD) region in the fin outside a periphery of the gate stack and the gate seal spacer, the LDD region comprising silicon doped with phosphorous;
a gate spacer over the LDD region, the gate spacer extending along a sidewall of the gate seal spacer; and
an epitaxial source/drain region in the fin adjacent the gate spacer, the epitaxial source/drain region comprising SiP doped with arsenic, the epitaxial source/drain region extending under the gate spacer in a direction perpendicular to a major surface of the substrate, the epitaxial source/drain region contacting a vertical surface of the fin, wherein a first width of the epitaxial source/drain region in a direction parallel to the major surface of the substrate at a point level with a top surface of the fin is less than a second width of the epitaxial source/drain region in the direction parallel to the major surface of the substrate at a point below the top surface of the fin, wherein the epitaxial source/drain region is in contact with a horizontal surface of the fin, a vertical surface of the gate seal spacer, a top surface of the gate seal spacer, the gate spacer, and the LDD region.
9. The semiconductor device of claim 8 , wherein the epitaxial source/drain region has a phosphorus concentration from 1×10 21 to 5×10 21 atoms/cm 3 , and wherein the epitaxial source/drain region has an arsenic concentration from 1×10 20 to 3×10 21 atoms/cm 3 .
10. The semiconductor device of claim 8 , wherein the epitaxial source/drain region further comprises carbon, and wherein the epitaxial source/drain region has a phosphorus concentration from 1×10 21 to 5×10 21 atoms/cm 3 , and wherein the epitaxial source/drain region has a carbon concentration from 0.1 to 2 atomic percent.
11. The semiconductor device of claim 10 , wherein the epitaxial source/drain region has an arsenic concentration from 1×10 20 to 3×10 21 atoms/cm 3 .
12. The semiconductor device of claim 8 , further comprising a silicide region at a top surface of the epitaxial source/drain region, wherein the silicide region has a thickness from 2 nm to 10 nm.
13. The semiconductor device of claim 12 , wherein the silicide region comprises TiSi.
14. The semiconductor device of claim 13 , further comprising a source/drain contact contacting the silicide region, wherein the source/drain contact extends 5 nm to 15 nm below a top surface of the epitaxial source/drain region.
15. The semiconductor device of claim 14 , wherein the source/drain contact comprises tungsten.
16. A semiconductor device comprising:
a gate structure over a semiconductor fin;
a first dielectric layer over the semiconductor fin adjacent the gate structure;
a gate seal spacer on a sidewall of the gate structure and over the first dielectric layer;
a gate spacer on a sidewall of the gate seal spacer and over the first dielectric layer; and
a source/drain region in the semiconductor fin adjacent the gate spacer, the source/drain region comprising SiP doped with arsenic and carbon, wherein the SiP doped with arsenic and carbon contacts a vertical sidewall of the first dielectric layer, a vertical sidewall and a horizontal surface of the gate seal spacer, and a sidewall of the gate spacer.
17. The semiconductor device of claim 16 , further comprising:
a silicide region over the source/drain region; and
a source/drain contact extending into the silicide region.
18. The semiconductor device of claim 17 , wherein the silicide region comprises TiSi and the source/drain contact comprises tungsten.
19. The semiconductor device of claim 16 , wherein the source/drain region has a phosphorus concentration from 1×10 21 to 5×10 21 atoms/cm 3 , wherein the source/drain region has an arsenic concentration from 1×10 20 to 3×10 21 atoms/cm 3 , and wherein the source/drain region has a carbon concentration from 0.1 to 2 atomic percent.
20. The semiconductor device of claim 16 , wherein the gate structure comprises a gate dielectric layer and a gate electrode over the gate dielectric layer, wherein the gate dielectric layer contacts the semiconductor fin, the gate seal spacer, and the first dielectric layer.