Substrate processing system for removing peripheral portion of substrate, substrate processing method and computer readable recording medium thereof
A substrate processing system configured to process a substrate includes a modification layer forming apparatus configured to form a modification layer within the substrate along a boundary between a peripheral portion of the substrate to be removed and a central portion of the substrate; and a periphery removing apparatus configured to remove the peripheral portion starting from the modification layer.
1. A substrate processing system, comprising:
a modification layer forming apparatus configured to form a modification layer within a first substrate along a boundary between a peripheral portion of the first substrate to be removed and a central portion of the first substrate by irradiating laser light from a rear surface of the first substrate while holding a second substrate bonded to a front surface of the first substrate to form a combined substrate; and
a periphery removing apparatus configured to remove the peripheral portion by starting from the modification layer and reducing a thickness of the first substrate while holding the second substrate.
2. The substrate processing system of claim 1 ,
wherein a lower end of the modification layer is located above a target surface of the first substrate when the thickness of the first substrate is reduced.
3. The substrate processing system of claim 1 ,
wherein a lower end of the modification layer is located under a target surface of the first substrate when the thickness of the first substrate is reduced.
4. A substrate processing system, comprising:
a modification layer forming apparatus configured to form a modification layer within a first substrate along a boundary between a peripheral portion of the first substrate to be removed and a central portion of the first substrate by irradiating laser light from a rear surface of the first substrate while holding a second substrate bonded to a front surface of the first substrate to form a combined substrate; and
a periphery removing apparatus configured to
remove the peripheral portion by starting from the modification layer and performing a processing on the combined substrate in which the first substrate and the second substrate are bonded to each other to form a bonding force reduced portion with respect to the second substrate on the front surface of the peripheral portion.
5. A substrate processing system, comprising:
a modification layer forming apparatus configured to form a modification layer within a first substrate along a boundary between a peripheral portion of the first substrate to be removed and a central portion of the first substrate by irradiating laser light from a rear surface of the first substrate while holding a second substrate bonded to a front surface of the first substrate to form a combined substrate; and
a periphery removing apparatus configured to remove the peripheral portion by starting from the modification layer,
wherein the modification layer forming apparatus forms, by performing a processing on the combined substrate in which the first substrate and the second substrate are bonded to each other and a bonding force reduced portion with respect to the second substrate is formed on the front surface of the peripheral portion, the modification layer corresponding to the bonding force reduced portion.
6. The substrate processing system of claim 5 ,
wherein the modification layer forming apparatus is further configured to form a diametrical modification layer extending outwards from the boundary within the first substrate in a diametrical direction, and form an annular split modification layer at an outer side than the boundary in the diametrical direction.
7. A substrate processing system, comprising:
a modification layer forming apparatus configured to form a modification layer within a first substrate along a boundary between a peripheral portion of the first substrate to be removed and a central portion of the first substrate in a combined substrate in which a second substrate are bonded to a front surface of the first substrate;
a periphery removing apparatus configured to remove the peripheral portion by starting from the modification layer; and
an interface processing apparatus configured to perform a preset processing on an interface, at the peripheral portion, where the first substrate and a second substrate are bonded.
8. The substrate processing system of claim 7 ,
wherein the interface processing apparatus modifies the interface by irradiating laser light to the interface of the first substrate or the second substrate before being bonded.
9. The substrate processing system of claim 7 ,
wherein the interface processing apparatus etches the interface of the first substrate or the second substrate before being bonded.
10. The substrate processing system of claim 7 ,
wherein the interface processing apparatus modifies the interface by irradiating laser light to the interface of the first substrate after being bonded.
11. The substrate processing system of claim 10 ,
wherein a device layer is formed on a front surface of the first substrate, and
the interface processing apparatus modifies the device layer by irradiating the laser light to the device layer.
12. A substrate processing method, comprising:
forming a modification layer within a first substrate along a boundary between a peripheral portion of the first substrate to be removed and a central portion of the first substrate;
removing the peripheral portion starting from the modification layer; and
bonding the first substrate and a second substrate,
wherein the forming of the modification layer, the bonding of the first substrate and the second substrate and the removing of the peripheral portion are performed in sequence.
13. The substrate processing method of claim 12 ,
wherein in the forming of the modification layer, a diametrical modification layer extending outwards from the boundary within the first substrate in a diametrical direction is formed, and an annular split modification layer is formed at an outer side than the boundary in the diametrical direction.
14. The substrate processing method of claim 12 ,
wherein a device layer is formed on a front surface of the first substrate, and
in the forming of the modification layer, the modification layer is formed by irradiating laser light from a rear surface of the first substrate.
15. The substrate processing method of claim 14 ,
wherein in the forming of the modification layer, the modification layer is formed within the first substrate by irradiating the laser light from the rear surface of the first substrate while holding the second substrate bonded to the front surface of the first substrate.
16. The substrate processing method of claim 15 ,
wherein in the removing of the peripheral portion, the peripheral portion is removed by starting from the modification layer while holding the second substrate.
17. A substrate processing method, comprising:
preparing a combined substrate in which a first substrate and a second substrate are bonded to each other;
forming a modification layer within the first substrate along a boundary between a peripheral portion of the first substrate to be removed and a central portion of the first substrate; and
removing the peripheral portion by starting from the modification layer,
wherein in the removing of the peripheral portion, the peripheral portion is removed by reducing a thickness of the first substrate while holding the second substrate.
18. The substrate processing method of claim 17 ,
wherein a lower end of the modification layer is located above a target surface of the first substrate when the thickness of the first substrate is reduced.
19. The substrate processing method of claim 17 ,
wherein a lower end of the modification layer is located under a target surface of the first substrate when the thickness of the first substrate is reduced.
20. A substrate processing method, comprising:
preparing a combined substrate in which a first substrate and a second substrate are bonded to each other;
forming a modification layer within the first substrate along a boundary between a peripheral portion of the first substrate to be removed and a central portion of the first substrate; and
removing the peripheral portion by starting from the modification layer,
wherein in the removing of the peripheral portion, the peripheral portion is removed by performing a processing on the combined substrate in which the first substrate and the second substrate are bonded to each other and a bonding force reduced portion with respect to the second substrate is formed on the front surface of the peripheral portion.
21. A substrate processing method, comprising:
preparing a combined substrate in which a first substrate and a second substrate are bonded to each other;
forming a modification layer within the first substrate along a boundary between a peripheral portion of the first substrate to be removed and a central portion of the first substrate; and
removing the peripheral portion starting from the modification layer,
wherein in the forming of the modification layer, a processing is performed on the combined substrate in which the first substrate and the second substrate are bonded to each other and a bonding force reduced portion with respect to the second substrate is formed on the front surface of the peripheral portion, and the modification layer is formed to correspond to the bonding force reduced portion.
22. A substrate processing method, comprising:
preparing a combined substrate in which a first substrate and a second substrate are bonded to each other;
forming a modification layer within the first substrate along a boundary between a peripheral portion of the first substrate to be removed and a central portion of the first substrate;
removing the peripheral portion starting from the modification layer; and
performing a preset processing on an interface, at the peripheral portion, where the first substrate and the second substrate are bonded.
23. The substrate processing method of claim 22 ,
wherein the performing of the preset processing on the interface is performed before bonding the first substrate and the second substrate, and
wherein in the performing of the preset processing on the interface, the interface is modified by irradiating laser light to the interface of the first substrate or the second substrate before being bonded.
24. The substrate processing method of claim 22 ,
wherein the performing of the preset processing on the interface is performed before bonding the first substrate and the second substrate, and
wherein in the performing of the preset processing on the interface, the interface of the first substrate or the second substrate before being bonded is etched.
25. The substrate processing method of claim 22 ,
wherein the performing of the preset processing on the interface is performed after bonding the first substrate and the second substrate, and
wherein in the performing of the preset processing on the interface, the interface is modified by irradiating laser light to the interface of the first substrate after being bonded.
26. The substrate processing method of claim 25 ,
wherein a device layer is formed on a front surface of the first substrate, and
in the performing of the preset processing on the interface, the device layer is modified by irradiating laser light to the device layer.
27. A substrate processing method, comprising:
preparing a combined substrate in which a first substrate and a second substrate are bonded to each other;
forming a modification layer within the first substrate along a boundary between a peripheral portion of the first substrate to be removed and a central portion of the first substrate;
removing the peripheral portion starting from the modification layer;
forming a modification layer in a third substrate stacked on the first substrate after performing the forming of the modification layer, and the removing of the peripheral portion; and
removing a peripheral portion of the third substrate.
28. The substrate processing method of claim 27 ,
wherein in the forming of the modification layer in the third substrate, the modification layer is formed within the third substrate at an inner side than an edge of the first substrate in a diametrical direction.