IP Library Granted Patent US 11,757,411
Granted Patent B2
US 11,757,411 · App. 18/147,849 · Granted Sep 12, 2023

Power amplifier circuit

Inventors: Satoshi Tanaka (Kyoto, JP); Satoshi Arayashiki (Kyoto, JP); Satoshi Goto (Kyoto, JP); Yusuke Tanaka (Kyoto, JP)
Assignee: MURATA MANUFACTURING CO., LTD.
H03F1/0216H03F3/21H03F2200/451H04W88/02
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Quick Facts
Patent No.
US 11,757,411
App. No.
18/147,849
Granted
Sep 12, 2023
Kind
B2
Abstract

A power amplifier circuit includes a first transistor having an emitter electrically connected to a common potential, a base to which a first high-frequency signal is input, and a collector from which a third high-frequency signal is output; a second transistor having an emitter electrically connected to the common potential, a base to which a second high-frequency signal is input, and a collector from which a fourth high-frequency signal is output; a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor.

Claims (11)

1. A power amplifier circuit configured to amplify a first high-frequency differential signal that includes a first high-frequency signal and a second high-frequency signal, and to output a second high-frequency differential signal that includes a third high-frequency signal and a fourth high-frequency signal, the power amplifier circuit comprising:

a first transistor having a first terminal, a second terminal, and a third terminal, the first high-frequency signal being input to the first terminal, and the third high-frequency signal being output from the second terminal;

a second transistor having a fourth terminal, a fifth terminal, and a sixth terminal, the second high-frequency signal being input to the fourth terminal, and the fourth high-frequency signal being output from the fifth terminal;

a third transistor having a seventh terminal, an eighth terminal, and a ninth terminal, the eighth terminal being electrically connected to the fifth terminal of the second transistor, and the seventh terminal being electrically connected to the first terminal of the first transistor; and

a fourth transistor having a tenth terminal, an eleventh terminal, and a twelfth terminal, the eleventh terminal being electrically connected to the second terminal of the first transistor and the tenth terminal being electrically connected to the fourth terminal of the second transistor,

wherein the ninth terminal of the third transistor is electrically connected to the seventh terminal of the third transistor, and

wherein the twelfth terminal of the fourth transistor is electrically connected to the tenth terminal of the fourth transistor.

2. The power amplifier circuit according to claim 1 , wherein each of the third transistor and the fourth transistor is a heterojunction bipolar transistor.

3. The power amplifier circuit according to claim 1 , wherein the third terminal of the first transistor and the sixth terminal of the second transistor are electrically connected to a common potential.

4. The power amplifier circuit according to claim 1 , wherein the second terminal of the first transistor and the fifth terminal of the second transistor are configured to receive a power supply potential output from a power supply circuit.

5. The power amplifier circuit according to claim 4 , wherein the power supply potential is configured to be controlled in accordance with an amplitude level of the first high-frequency differential signal.

Priority Claims (1)
JP 2018-187387 · Oct 2, 2018 · national
Continuity (3)
Continuation 17323505 · May 18, 2021
Continuation 16589369 · Oct 1, 2019
Related Publication 20230132964A1 · May 4, 2023
Cited By (6)
US 12,413,147 US 12,573,993 US 12,592,668 US 12,683,561 US 12,683,636 US 12,707,396