Oxidation resistant protective layer in chamber conditioning

1. A method for conditioning a substrate processing chamber, the method comprising:

setting a pressure in the substrate processing chamber to within a predetermined pressure range;

setting a temperature of the substrate processing chamber to within a predetermined temperature range;

supplying a process gas mixture to a gas distribution device within the substrate processing chamber, wherein the process gas mixture includes a gas including at least an oxygen species, and a helium or argon gas;

striking a plasma within the substrate processing chamber;

monitoring a condition in the substrate processing chamber;

detecting the monitored condition meeting or transgressing a threshold value;

based on a detection of the monitored condition meeting or transgressing a threshold value, implementing a substrate processing chamber conditioning operation, wherein the substrate processing chamber conditioning operation comprises:

depositing, in the substrate processing chamber, a preconditioning film by atomic layer deposition (ALD) onto an internal surface of the substrate processing chamber,

depositing, in the substrate processing chamber, a silicon oxycarbide (SiCO) film by remote plasma chemical vapor deposition (RPCVD) onto the preconditioning film, and

depositing, in the substrate processing chamber, a protective layer by chemical vapor deposition (CVD) onto the SiCO film, wherein the protective layer has a different composition than the SiCO film.

2. The method of claim 1 , further comprising: repeating the depositing of a protective layer onto the SiCO film successively to form paired layers of an SiCO film and a protective layer to form a composite protective film, the composite protective film including the preconditioning film and successive paired layers of an SiCO film and a protective layer, and

forming the paired layers until a threshold thickness for the composite protective film is reached.

3. The method of claim 1 , wherein the monitored condition includes a film stress value or defect performance of the substrate processing chamber.

4. The method of claim 1 , wherein the monitored condition includes a thickness of a film accumulation on the internal surface of the substrate processing chamber.

5. The method of claim 4 , wherein the thickness of the film accumulation is in a range from 0.05 to 0.5 μm (microns).

6. The method of claim 1 , wherein the protective layer has a different carbon content than the SiCO film.

7. The method of claim 1 , wherein a chemical used in a reaction of the CVD for deposition of the protective layer includes a silicon-containing species.

8. The method of claim 7 , wherein the silicon-containing species includes silane or disilane.

9. The method of claim 1 , wherein the pressure in the substrate processing chamber during deposition of the protective layer is set to within a range from 0.1 to 10 Torr.

10. The method of claim 1 , wherein the temperature of the substrate processing chamber during deposition of the protective layer is set to within a range from 100° C. to 600° C.

11. The method of claim 1 , wherein a thickness of the protective layer is in a range from 50 nanometers (nm) and 1 micron (μm).

12. The method of claim 1 , wherein the protective layer is an oxidation-resistant protective layer including 30% to 45% by weight carbon.

13. The method of claim 1 , wherein the protective layer is deposited at a deposition rate in a range from 50 to 500 Angstrom (A)/min.

14. The method of claim 1 , wherein striking the plasma comprises supplying power to one of an upper electrode and a lower electrode in a range from 500 W to 6000 W.