Critical dimension uniformity
View Patent ↗A method includes receiving a pattern layout for a mask, shrinking the pattern layout to form a shrunk pattern, determining centerlines for each of a plurality of features within the shrunk pattern, and snapping the centerline for each of the plurality of features to a grid. The grid represents a minimum resolution size of a mask fabrication tool. The method further includes, after snapping the centerline for each of the plurality of features to the grid, fabricating the mask with the shrunk pattern.
1. A method comprising:
receiving a first pattern for fabrication of a first mask;
receiving a second pattern for fabrication of a second mask;
aligning a first feature of the first pattern with a second feature of the second pattern;
after the aligning, shrinking the first pattern and the second pattern to form a first shrunk pattern and a second shrunk pattern;
in response to determining that the first feature is no longer aligned with the second feature, adjusting an edge of the second feature to match an edge of the first feature; and
fabricating the first mask with the first shrunk pattern and fabricating the second mask with the second shrunk pattern.
2. The method of claim 1 , wherein the second shrunk pattern corresponds to one of an active region layer of an integrated circuit or a polysilicon layer of an integrated circuit.
3. The method of claim 1 , wherein adjusting the edge of the second feature comprises defining a distance relationship between the first feature in the first shrunk pattern and the second feature in the second shrunk pattern, and adjusting the edge based on that distance relationship.
4. The method of claim 1 , wherein the edge of the first feature is aligned with a grid.
5. The method of claim 1 , wherein the aligning the first feature of the first pattern with the second feature of the second pattern includes aligning the edge of the second feature to match the edge of the first feature.
6. The method of claim 1 , wherein the first pattern corresponds to a gate pattern layer and the second pattern corresponds to a source/drain pattern.
7. The method of claim 1 , wherein the edge of the first feature is unadjusted during the adjusting of the edge of the second feature to match the edge of the first feature.
8. The method of claim 1 , wherein in response to determining that the first feature is no longer aligned with the second feature, the edge of second feature overlaps a portion of the first feature.
9. The method of claim 1 , wherein the first shrunk pattern corresponds to one of a gate pattern layer and a source/drain pattern.
10. A method comprising:
receiving a first pattern for fabrication of a first mask;
receiving a second pattern for fabrication of a second mask;
aligning a first feature of the first pattern with a second feature of the second pattern such that a portion of the second feature overlaps a portion of the first feature;
after the aligning, shrinking the first pattern and the second pattern to form a first shrunk pattern and a second shrunk pattern, wherein the portion of the second feature no longer overlaps the portion of the first feature after the shrinking of the first pattern and the second pattern to form the first shrunk pattern and the second shrunk pattern;
after the shrinking, in response to determining that the first feature is no longer aligned with the second feature, adjusting an edge of the second feature to match an edge of the first feature; and
fabricating the first mask with the first shrunk pattern and fabricating the second mask with the second shrunk pattern.
11. The method of claim 10 , wherein the portion of the second feature overlaps the portion of the first feature after the adjusting of the edge of the second feature to match the edge of the first feature.
12. The method of claim 10 , wherein the edge of the first feature and the edge of the second feature are aligned with a grid after the adjusting of the edge of the second feature to match the edge of the first feature, the grid representing a minimum resolution size of a mask fabrication tool.
13. The method of claim 10 , wherein a size of the first shrunk pattern is within about 95% to about 99% of a size of the first pattern.
14. The method of claim 10 , wherein a size of the first feature remains constant during the adjusting of the edge of the second feature to match the edge of the first feature.
15. The method of claim 10 , wherein the first pattern corresponds to a gate pattern layer and the second pattern corresponds to an active region pattern.
16. A method comprising:
receiving a first pattern for fabrication of a first mask;
receiving a second pattern for fabrication of a second mask;
aligning a first feature of the first pattern with a second feature of the second pattern;
after the aligning, shrinking the first pattern and the second pattern to form a first shrunk pattern and a second shrunk pattern, wherein a size of the first shrunk pattern is within about 95% to about 99% of a size of the first pattern;
after the aligning, in response to determining that the first feature is no longer aligned with the second feature, adjusting an edge of the second feature to match an edge of the first feature; and
after the adjusting of the edge of the second feature, fabricating the first mask with the first shrunk pattern.
17. The method of claim 16 , wherein the edge of the first feature and the edge of the second feature are aligned with a grid after the adjusting of the edge of the second feature to match the edge of the first feature, the grid representing a minimum resolution size of a mask fabrication tool.
18. The method of claim 16 , wherein the aligning the first feature of the first pattern with the second feature of the second pattern includes aligning the edge of the second feature to match the edge of the first feature.
19. The method of claim 16 , wherein the edge of the first feature is unadjusted during the adjusting of the edge of the second feature to match the edge of the first feature.