Plasma processing apparatus
A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.
1. A plasma processing apparatus comprising:
A first balun including a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal;
a grounded vacuum container;
a first electrode electrically connected to the first balanced terminal;
a second electrode electrically connected to the second balanced terminal;
wherein the first electrode includes a first holding surface configured to hold a first member, the second electrode includes a second holding surface configured to hold a second member, and the first holding surface and the second holding surface belong to one plane,
a ground electrode arranged in the vacuum container and grounded,
a second balun including a third unbalanced terminal, a fourth unbalanced terminal, a third balanced terminal, and a fourth balanced terminal;
a third electrode electrically connected to the third balanced terminal; and
a fourth electrode electrically connected to the fourth balanced terminal,
wherein the fourth electrode is arranged around the third electrode, and the third electrode and the fourth electrode are arranged to oppose the one plane,
wherein Rp′ represents a resistance component between the third balanced terminal and the fourth balanced terminal, and X′ represents an inductance between the third unbalanced terminal and the third balanced terminal, when viewing a side of the third electrode and the fourth electrode from a side of the third balanced terminal and the fourth balanced terminal, 1.5≤X′/Rp′≤5000 is satisfied.
2. The plasma processing apparatus according to claim 1 , wherein the ground electrode includes a plurality of plate portions arranged to be parallel to each other.
3. The plasma processing apparatus according to claim 2 , wherein the plurality of plate portions are arranged so that the ground electrode has a comb-tooth shape in a section.
4. The plasma processing apparatus according to claim 1 , wherein the ground electrode has a comb-tooth shape in a section.
5. The plasma processing apparatus according to claim 1 , wherein the ground electrode is arranged to intersect the one plane.
6. The plasma processing apparatus according to claim 5 , wherein the ground electrode includes a portion arranged between the first member and the second member.
7. The plasma processing apparatus according to claim 1 , wherein the first holding surface opposes an internal space of the vacuum container via the first member, and the second holding surface opposes the internal space of the vacuum container via the second member.
8. The plasma processing apparatus according to claim 1 , wherein the first balanced terminal and the first electrode are electrically connected via a blocking capacitor.
9. The plasma processing apparatus according to claim 1 , wherein the second balanced terminal and the second electrode are electrically connected via a blocking capacitor.
10. The plasma processing apparatus according to claim 1 , wherein the first balanced terminal and the first electrode are electrically connected via a blocking capacitor, and the second balanced terminal and the second electrode are electrically connected via a blocking capacitor.
11. The plasma processing apparatus according to claim 1 , wherein the first electrode and the second electrode are supported by the vacuum container via insulators.
12. The plasma processing apparatus according to claim 1 , wherein each of the first and second baluns includes a first coil configured to connect the first unbalanced terminal and the first balanced terminal, and a second coil configured to connect the second unbalanced terminal and the second balanced terminal.
13. The plasma processing apparatus according to claim 12 , wherein each of the first and second baluns further includes a third coil and a fourth coil both of which are connected between the first balanced terminal and the second balanced terminal, and the third coil and the fourth coil are configured to set, as a midpoint between a voltage of the first balanced terminal and a voltage of the second balanced terminal, a voltage of a connection node of the third coil and the fourth coil.
14. The plasma processing apparatus according to claim 1 , wherein the first electrode holds a first target, the second electrode holds a second target, the first electrode opposes a space on a side of a substrate as a processing target via the first target, and the second electrode opposes the space via the second target.
15. The plasma processing apparatus according to claim 1 , wherein the first electrode holds a first substrate, the second electrode holds a second substrate, and the plasma processing apparatus is configured as an etching apparatus configured to etch the first substrate and the second substrate.
16. The plasma processing apparatus according to claim 1 , further comprising:
a high-frequency power supply; and
an impedance matching circuit arranged between the high-frequency power supply and the second balun.
17. The plasma processing apparatus according to claim 1 , wherein Rp represents a resistance component between the first balanced terminal and the second balanced terminal, and X represents an inductance between the first unbalanced terminal and the first balanced terminal, when viewing a side of the first electrode and the second electrode from a side of the first balanced terminal and the second balanced terminal, 1.5≤X/Rp≤5000 is satisfied.