Defect inspection device and defect inspection method
The purpose of this invention is to make it possible to efficiently and accurately detect a reticle defect at an earlier stage in a manufacturing process. The inspection device according to this invention uses the results of comparing die images of wafers that have had patterns transferred thereto using the same reticle after subjecting the die images to averaging processing and the results of comparing the die images without subjecting the same to averaging processing to distinguish a random defect signal caused by a huge defect, or the like, and having an extremely high brightness from a repeated defect signal, and only extracts repeated defects with higher accuracy.
1. In reticle defect detection systems,
an inspection sub-system which detects a repeated defect as a reticle defect from a swath image that a wafter to which a reticle is transferred is imaged, a reticle defect detection system comprising:
a stage which holds the wafer and moves in an XY direction;
an image acquirer which acquires the swath image by scanning the wafer; and
a processor which performs arithmetic processing on the swath image, wherein
the processor divides the swath image into die images,
additively averages die images of the same transfer regions that the same parts of the reticle in the swath image are transferred and generates averaged images,
calculates first defect information which is obtained by performing die-TO-die comparison between the averaged images,
calculates second defect information which is obtained by performing die-TO-die comparison between original die images which are not averaged in the swath image, and
compares the first defect information with the second defect information on the same coordinates and extracts only the repeated defect by sorting out or excluding a case where the second defect information is large.
2. The reticle defect detection system according to claim 1 , wherein
the defect information is a defect signal amount or a threshold margin.
3. The reticle defect detection system according to claim 2 , wherein
the averaged images are a first averaged image which is acquired from the wafer and a second averaged image which is acquired, in advance, from a second wafer to which a reticle which is different from the reticle which is transferred to the wafer is transferred, and
a die-TO-die comparison is made between the first averaged image and the second averaged image and thereby the first defect information is calculated.
4. The reticle defect detection system according to claim 3 , wherein
the wafer and the second wafer are wafers to which a one-shot one-die reticle is transferred.
5. The reticle defect detection system according to claim 4 , wherein
in a case where a defect is present also on the reticle which is transferred to the second wafer,
the processor obtains a difference that the second averaged image is subtracted from the first averaged image, and
in a case where it is larger than a threshold, calculates it as first defect information.
6. The reticle defect detection system according to claim 1 , wherein
the same processing is performed by replacing the die with a shot.
7. The reticle defect detection system according to claim 2 , wherein
a threshold when extracting the second defect information is Cold Threshold.
8. The reticle defect detection system according to claim 7 , wherein
the second defect information is a signal amount or a threshold margin of a random defect of a huge particle and so forth which is particularly high in Signal/Noise in random defects.
9. The reticle defect detection system according to claim 1 , wherein
the averaged images are images which are generated by being additively averaged including an inspection die.
10. The reticle defect detection system according to claim 1 , wherein
an optical reticle defect detection system which has
a light source which radiates light to the wafer, and
a sensor which detects the light which is generated from the wafer.