Placing table including heat exchange medium path and substrate processing apparatus thereof
A placing table configured to place a substrate on an electrostatic chuck includes a base; the electrostatic chuck placed on a placing surface of the base; and a path formed within the placing table along the placing surface, and configured to allow a heat exchange medium to flow therein from an inlet opening to an outlet opening of the heat exchange medium. A distance between a top surface of the path and the placing surface is constant from the inlet opening to the outlet opening. A cross sectional shape of the path in a direction perpendicular to the top surface is differed depending on a position in the path.
1. A placing table configured to place a substrate on an electrostatic chuck, comprising:
a base;
the electrostatic chuck placed on a placing surface of the base; and
a path formed within the placing table along the placing surface, and configured to allow a heat exchange medium to flow therein from an inlet opening to an outlet opening of the heat exchange medium,
wherein a distance between a top surface of the path and the placing surface is constant from the inlet opening to the outlet opening, and
a cross sectional shape of the path in a direction perpendicular to the top surface is differed depending on a position in the path,
wherein a cross sectional area of the path corresponding to a first portion of the placing surface having a first temperature is smaller than a cross sectional area of the path corresponding to a second portion of the placing surface having a second temperature which is lower than the first temperature, and
the cross sectional shape of the path is determined by referring to information indicating a previously set relationship between a temperature of the placing surface and a height of the path.
2. The placing table of claim 1 ,
wherein a width of the top surface of the path ranging from the inlet opening to the outlet opening is constant, and
a length of the path in a height direction is differed depending on a position in the path.
3. A placing table configured to place a substrate on an electrostatic chuck, comprising:
a base;
the electrostatic chuck placed on a placing surface of the base; and
a path formed within the placing table along the placing surface, and configured to allow a heat exchange medium to flow therein from an inlet opening to an outlet opening of the heat exchange medium,
wherein a distance between a top surface of the path and the placing surface is constant from the inlet opening to the outlet opening, and
a cross sectional shape of the path in a direction perpendicular to the top surface is differed depending on a position in the path,
wherein a length of the path in a height direction is determined by referring to information indicating a previously set relationship between a temperature of the placing surface and a height of the path,
wherein the length of the path in the height direction corresponding to a first portion of the placing surface having a first temperature is shorter than the length of the path in the height direction corresponding to a second portion of the placing surface having a second temperature which is lower than the first temperature.
4. The placing table of claim 3 ,
wherein the length of the path in the height direction is determined by varying a height of a bottom surface of the path.
5. A substrate processing apparatus comprising a chamber configured to perform a plasma processing or a heat treatment therein; and a placing table configured to place a substrate on an electrostatic chuck within the chamber,
wherein the placing table comprises:
a base;
the electrostatic chuck placed on a placing surface of the base; and
a path formed within the placing table along the placing surface, and configured to allow a heat exchange medium to flow therein from an inlet opening to an outlet opening of the heat exchange medium,
wherein a distance between a top surface of the path and the placing surface is constant from the inlet opening to the outlet opening, and
a cross sectional shape of the path in a direction perpendicular to the top surface is differed depending on a position in the path,
wherein a cross sectional area of the path corresponding to a first portion of the placing surface having a first temperature is smaller than a cross sectional area of the path corresponding to a second portion of the placing surface having a second temperature which is lower than the first temperature, and
the cross sectional shape of the path is determined by referring to information indicating a previously set relationship between a temperature of the placing surface and a height of the path.