Gate-all-around integrated circuit structures having adjacent structures for sub-fin electrical contact
Gate-all-around integrated circuit structures having adjacent structures for sub-fin electrical contact are described. For example, an integrated circuit structure includes a semiconductor island on a semiconductor substrate. A vertical arrangement of horizontal nanowires is above a fin protruding from the semiconductor substrate. A channel region of the vertical arrangement of horizontal nanowires is electrically isolated from the fin. The fin is electrically coupled to the semiconductor island. A gate stack is over the vertical arrangement of horizontal nanowires.
1. An integrated circuit structure, comprising:
a semiconductor island on a semiconductor substrate;
a vertical arrangement of horizontal nanowires above a fin protruding from the semiconductor substrate, a channel region of the vertical arrangement of horizontal nanowires electrically isolated from the fin, wherein the fin is electrically coupled to the semiconductor island; and
a gate stack over the vertical arrangement of horizontal nanowires, the gate stack physically separated from the fin.
2. The integrated circuit structure of claim 1 , wherein the semiconductor island and the vertical arrangement of horizontal nanowires comprise a same semiconductor material.
3. The integrated circuit structure of claim 2 , wherein the same semiconductor material is silicon.
4. The integrated circuit structure of claim 2 , wherein the same semiconductor material is silicon germanium.
5. The integrated circuit structure of claim 1 , further comprising:
a pair of epitaxial source or drain structures at first and second ends of the vertical arrangement of horizontal nanowires.
6. The integrated circuit structure of claim 5 , further comprising:
a pair of conductive contacts on the pair of epitaxial source or drain structures; and
a conductive contact on the semiconductor island.
7. The integrated circuit structure of claim 6 , wherein one of the pair of conductive contacts is electrically connected to the conductive contact on the semiconductor island.
8. The integrated circuit structure of claim 5 , wherein the pair of epitaxial source or drain structures is a pair of non-discrete epitaxial source or drain structures.
9. The integrated circuit structure of claim 5 , wherein the pair of epitaxial source or drain structures is a pair of discrete epitaxial source or drain structures.
10. The integrated circuit structure of claim 1 , wherein the gate stack comprises a high-k gate dielectric layer and a metal gate electrode.
11. An integrated circuit structure, comprising:
a semiconductor island on a semiconductor substrate, the semiconductor island having a top surface;
a first gate stack on the top surface of the semiconductor island;
a vertical arrangement of horizontal nanowires above a fin protruding from the semiconductor substrate, a channel region of the vertical arrangement of horizontal nanowires electrically isolated from the fin, wherein the fin has a top surface below the top surface of the semiconductor island; and
a second gate stack over the vertical arrangement of horizontal nanowires, the second gate stack physically separated from the fin.
12. The integrated circuit structure of claim 11 , wherein the semiconductor island and the vertical arrangement of horizontal nanowires comprise a same semiconductor material.
13. The integrated circuit structure of claim 12 , wherein the same semiconductor material is silicon.
14. The integrated circuit structure of claim 12 , wherein the same semiconductor material is silicon germanium.
15. The integrated circuit structure of claim 11 , further comprising:
a pair of epitaxial source or drain structures at first and second ends of the vertical arrangement of horizontal nanowires; and
a pair of source or drain regions in the semiconductor island.
16. The integrated circuit structure of claim 15 , further comprising:
a first pair of conductive contacts on the pair of epitaxial source or drain structures; and
a second pair of conductive contacts on the pair of source or drain regions in the semiconductor island.
17. The integrated circuit structure of claim 16 , wherein one of the first pair of conductive contacts is electrically connected to one of the second pair of conductive contacts.
18. The integrated circuit structure of claim 15 , wherein the pair of epitaxial source or drain structures is a pair of non-discrete epitaxial source or drain structures.
19. The integrated circuit structure of claim 15 , wherein the pair of epitaxial source or drain structures is a pair of discrete epitaxial source or drain structures.
20. The integrated circuit structure of claim 11 , wherein the first and second gate stacks each comprise a high-k gate dielectric layer and a metal gate electrode.
21. A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a semiconductor island on a semiconductor substrate;
a vertical arrangement of horizontal nanowires above a fin protruding from the semiconductor substrate, a channel region of the vertical arrangement of horizontal nanowires electrically isolated from the fin, wherein the fin is electrically coupled to the semiconductor island; and
a gate stack over the vertical arrangement of horizontal nanowires, the gate stack physically separated from the fin.
22. The computing device of claim 21 , further comprising:
a memory coupled to the board.
23. The computing device of claim 21 , further comprising:
a communication chip coupled to the board.
24. The computing device of claim 21 , wherein the component is a packaged integrated circuit die.
25. The computing device of claim 21 , wherein the component is selected from the group consisting of a processor, a communications chip, and a digital signal processor.
26. An integrated circuit structure, comprising:
a semiconductor island on a semiconductor substrate;
a vertical arrangement of horizontal nanowires above a fin protruding from the semiconductor substrate, a channel region of the vertical arrangement of horizontal nanowires electrically isolated from the fin, wherein the fin is electrically coupled to the semiconductor island;
a gate stack over the vertical arrangement of horizontal nanowires;
a pair of epitaxial source or drain structures at first and second ends of the vertical arrangement of horizontal nanowires;
a pair of conductive contacts on the pair of epitaxial source or drain structures; and
a conductive contact on the semiconductor island.
27. The integrated circuit structure of claim 26 , wherein one of the pair of conductive contacts is electrically connected to the conductive contact on the semiconductor island.
28. An integrated circuit structure, comprising:
a semiconductor island on a semiconductor substrate, the semiconductor island having a top surface;
a first gate stack on the top surface of the semiconductor island;
a vertical arrangement of horizontal nanowires above a fin protruding from the semiconductor substrate, a channel region of the vertical arrangement of horizontal nanowires electrically isolated from the fin, wherein the fin has a top surface below the top surface of the semiconductor island;
a second gate stack over the vertical arrangement of horizontal nanowires;
a pair of epitaxial source or drain structures at first and second ends of the vertical arrangement of horizontal nanowires;
a pair of source or drain regions in the semiconductor island;
a first pair of conductive contacts on the pair of epitaxial source or drain structures; and
a second pair of conductive contacts on the pair of source or drain regions in the semiconductor island, wherein one of the first pair of conductive contacts is electrically connected to one of the second pair of conductive contacts.