Gate-all-around integrated circuit structures having adjacent structures for sub-fin electrical contact
Gate-all-around integrated circuit structures having adjacent structures for sub-fin electrical contact are described. For example, an integrated circuit structure includes a semiconductor island on a semiconductor substrate. A vertical arrangement of horizontal nanowires is above a fin protruding from the semiconductor substrate. A channel region of the vertical arrangement of horizontal nanowires is electrically isolated from the fin. The fin is electrically coupled to the semiconductor island. A gate stack is over the vertical arrangement of horizontal nanowires.
1. An integrated circuit structure, comprising:
a vertical arrangement of horizontal nanowires above a semiconductor substrate, a channel region of the vertical arrangement of horizontal nanowires electrically isolated from the semiconductor substrate;
an epitaxial source or drain structure coupled to the vertical arrangement of horizontal nanowires, the epitaxial source or drain structure physically isolated from but electrically coupled to the semiconductor substrate; and
a semiconductor island on a semiconductor substrate, the semiconductor island electrically coupled to the epitaxial source or drain structure.
2. The integrated circuit structure of claim 1 , further comprising:
a conductive contact over and coupled to the epitaxial source or drain structure, the conductive contact electrically coupled to the semiconductor substrate.
3. The integrated circuit structure of claim 1 , further comprising:
a gate stack over the vertical arrangement of horizontal nanowires, the gate stack physically separated from the fin.
4. The integrated circuit structure of claim 3 , wherein the gate stack comprises a high-k gate dielectric layer and a metal gate electrode.
5. The integrated circuit structure of claim 1 , wherein the semiconductor island electrically coupled to the epitaxial source or drain structure by a first conductive contact on the epitaxial source or drain structure, a conductive line coupled to the first conductive contact, and a second conductive contact on the semiconductor island, the second conductive contact coupled to the conductive line.
6. The integrated circuit structure of claim 1 , wherein the semiconductor island and the vertical arrangement of horizontal nanowires comprise silicon.
7. The integrated circuit structure of claim 1 , wherein the semiconductor island and the vertical arrangement of horizontal nanowires comprise silicon germanium.
8. The integrated circuit structure of claim 1 , further comprising:
a fin protruding from the semiconductor substrate, the fin beneath the vertical arrangement of horizontal nanowires, wherein the epitaxial source or drain structure is physically isolated from the fin.
9. The integrated circuit structure of claim 8 ,
wherein the fin is laterally separated from and electrically coupled to the semiconductor island.
10. The integrated circuit structure of claim 1 , wherein the epitaxial source or drain structure is a non-discrete epitaxial source or drain structure.
11. The integrated circuit structure of claim 1 , wherein the epitaxial source or drain structure is a discrete epitaxial source or drain structure.
12. A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a vertical arrangement of horizontal nanowires above a semiconductor substrate, a channel region of the vertical arrangement of horizontal nanowires electrically isolated from the semiconductor substrate;
an epitaxial source or drain structure coupled to the vertical arrangement of horizontal nanowires, the epitaxial source or drain structure physically isolated from but electrically coupled to the semiconductor substrate; and
a semiconductor island on a semiconductor substrate, the semiconductor island electrically coupled to the epitaxial source or drain structure.
13. The computing device of claim 12 , further comprising:
a memory coupled to the board.
14. The computing device of claim 12 , further comprising:
a communication chip coupled to the board.
15. The computing device of claim 12 , further comprising:
a battery coupled to the board.
16. The computing device of claim 12 , further comprising:
a camera coupled to the board.
17. The computing device of claim 12 , further comprising:
a display coupled to the board.
18. The computing device of claim 12 , wherein the component is a packaged integrated circuit die.
19. The computing device of claim 12 , wherein the component is selected from the group consisting of a processor, a communications chip, and a digital signal processor.
20. An integrated circuit structure, comprising:
a vertical arrangement of horizontal nanowires above a semiconductor substrate, a channel region of the vertical arrangement of horizontal nanowires electrically isolated from the semiconductor substrate;
an epitaxial source or drain structure coupled to the vertical arrangement of horizontal nanowires, the epitaxial source or drain structure physically isolated from but electrically coupled to the semiconductor substrate;
a semiconductor island on a semiconductor substrate, the semiconductor island electrically coupled to the epitaxial source or drain structure; and
a fin protruding from the semiconductor substrate, the fin beneath the vertical arrangement of horizontal nanowires, wherein the epitaxial source or drain structure is physically isolated from the fin, and wherein the fin is laterally separated from and electrically coupled to the semiconductor island.
21. An integrated circuit structure, comprising:
a vertical arrangement of horizontal nanowires above a semiconductor substrate, a channel region of the vertical arrangement of horizontal nanowires electrically isolated from the semiconductor substrate; and
an epitaxial source or drain structure coupled to the vertical arrangement of horizontal nanowires, the epitaxial source or drain structure physically isolated from but electrically coupled to the semiconductor substrate, wherein the epitaxial source or drain structure is a non-discrete epitaxial source or drain structure.