Interface circuit and semiconductor output circuit device
A device includes an interface circuit connected between a pad and an internal circuit. The interface circuit comprises a pull-up driver including first and second PMOS transistors and a first impedance controller. The first PMOS transistor is connected between a power terminal provided to a power voltage and a first connection node and controlled by a first control bias. The second PMOS transistor connected between the first connection node and the pad and normally turned-on, and the first impedance controller is connected to the first connection node to control an impedance thereof based on the first control bias. The interface circuit further includes a pull-down driver including first and second NMOS transistors. The first NMOS transistor is connected between the pad and a second connection node and controlled by a driving voltage, and the second NMOS transistor is connected between the second connection node and a ground voltage terminal.
1. An interface circuit connected between a pad and an internal circuit, the interface circuit comprising:
a pull-up driver including a first PMOS transistor, a second PMOS transistor and a first impedance controller, the first PMOS transistor connected between a power terminal provided to a power voltage and a first connection node and controlled by a first control bias, the second PMOS transistor connected between the first connection node and the pad and normally turned-on, and the first impedance controller connected to the first connection node to control an impedance of the first connection node based on the first control bias; and
a pull-down driver including a first NMOS transistor and a second NMOS transistor, the first NMOS transistor connected between the pad and a second connection node and controlled by a driving voltage, and the second NMOS transistor connected between the second connection node and a ground voltage terminal,
wherein the first PMOS transistor and the second PMOS transistor are driven by the driving voltage and a difference between the first control bias and the power voltage is substantially equal to or less than a maximum operating voltage of the first and second PMOS transistors.
2. The interface circuit of claim 1 , wherein the maximum operating voltage is about 1.1 times to about 1.2 times the driving voltage and the maximum operating voltage is less than the power voltage.
3. The interface circuit of claim 1 , wherein the first control bias is a sum of a first bias voltage and a threshold voltage of the first PMOS transistor.
4. The interface circuit of claim 2 , wherein a gate of the second PMOS transistor receives a second bias voltage, and
the second bias voltage is set so that a voltage difference between the gate of the second PMOS transistor and a voltage of the first connection node is below the maximum operating voltage.
5. The interface circuit of claim 1 , wherein the first impedance controller is connected between the power terminal and the first connection node and the first impedance controller comprises a plurality of PMOS transistors driven in response to a plurality of first control signals having a level substantially the same as a level of the first control bias.
6. The interface circuit of claim 1 , further comprising a level shifter receiving the power voltage, the driving voltage and a first bias voltage, to generate the first control bias and a plurality of first control signals for controlling the first impedance controller,
wherein the level shifter comprises at least one low voltage transistors driven at the driving voltage.
7. The interface circuit of claim 6 , wherein the level shifter comprises:
a current mirror configured to mirror a current corresponding to the power voltage;
a first adjustment circuit connected to an output terminal of the current mirror, the first adjustment circuit receiving the first bias voltage which adjust a voltage level of the output terminal of the current mirror; and
a second adjustment circuit connected between the power terminal and the output terminal of the current mirror to provide a compensation current corresponding to a current amount of the current mirror to the output terminal of the current mirror.
8. The interface circuit of claim 1 , further comprising a first resistor electrically coupled between the pad and the second PMOS transistor to protect an electrostatic discharge (ESD) and control an impedance of the pull-up driver.
9. The interface circuit of claim 1 , further comprising a second resistor electrically coupled between the pad and the first NMOS transistor to protect an electrostatic discharge (ESD) and control an impedance of the pull-down driver.
10. The interface circuit of claim 1 , wherein the first NMOS transistor and the second NMOS transistor are driven at the driving voltage.
11. The interface circuit of claim 1 , wherein a gate of the first NMOS transistor receives the driving voltage and a gate of the second NMOS transistor receives a voltage between about 0V and the driving voltage.
12. The interface circuit of claim 11 , further comprising a second impedance controller connected to the second connection node to control an impedance of the second connection node in response to a plurality of second control signals,
wherein the plurality of second control signals includes a voltage range between about 0V and the driving voltage.
13. The interface circuit of claim 12 , wherein the second impedance controller comprises a plurality of NMOS transistors connected between the second connection node and the ground voltage terminal and driven in response to the plurality of second control signals.
14. The interface circuit of claim 11 , further comprising an N-driver control logic configured to generate a plurality of second control signals for controlling the gate of the second NMOS transistor and an impedance of the second connection node.