Photosensitive resin composition, polyimide production method, and semiconductor device
A semiconductor device having a copper wiring and an insulating layer provided on the copper wiring, where after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer. The insulating layer contains at least one polyimide that has (i) a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; or (ii) a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; or (iii) a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 2,2′-dimethyl-4,4′-diaminobiphenyl.
1. A semiconductor device comprising copper wiring and an insulating layer provided on the copper wiring, wherein:
after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer,
the insulating layer contains a cured product of a composition comprising a photosensitive polyimide precursor and an oxime ester, the cured product comprising:
polyimide having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; and
polyimide having a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether.
2. The semiconductor device according to claim 1 , wherein the area of void portion is 6% or less.
3. The semiconductor device according to claim 1 , wherein the area of void portion is vacuum.
4. The semiconductor device according to claim 1 , wherein the area of void portion is filled with a gas.
5. The semiconductor device according to claim 1 , wherein the insulating layer is an interlayer insulating film of the semiconductor device.
6. A method for preparing a semiconductor device, comprising:
forming a copper wiring, and
providing an insulating layer on the copper wiring,
the method for preparing the semiconductor device further comprises curing a composition comprising a photosensitive polyimide precursor and an oxime ester to form the insulating layer,
wherein:
the cured composition comprises:
polyimide having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; and
polyimide having a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether, and
after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer.
7. The method according to claim 6 , wherein the photosensitive polyimide precursor comprises:
photosensitive polyimide precursor having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; and
photosensitive polyimide precursor having a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether.
8. The method according to claim 6 , further comprising:
exposing the photosensitive polyimide precursor;
developing the photosensitive polyimide precursor after exposure to form a relief pattern; and
heat-treating the relief pattern to form a cured relief pattern as the insulating layer, wherein the photosensitive polyimide precursor comprises:
photosensitive polyimide precursor having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; and
photosensitive polyimide precursor having a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether.