Apparatus and method for programming data in a memory device

1. A memory device, comprising:

a first memory group including plural first non-volatile memory cells storing multi-bit data;

a second memory group including plural second non-volatile memory cells storing single-bit data; and

a program operation controller configured to:

build the multi-bit data based on data inputted from an external device,

perform a logical operation regarding partial data among the multi-bit data to generate a parity,

program the parity in the second memory group after programming the partial data in the first memory group,

perform a verification operation regarding the partial data after a sudden power-off (SPO) occurs,

recover the partial data based on the parity and a result of the verification operation, and

program the recovered partial data in the first memory group.

2. The memory device according to claim 1 , wherein the program operation controller is further configured to output a completion notice associated with the programming of the partial data after the partial data has been successively programmed in the first memory group.

3. The memory device according to claim 2 , wherein the program operation controller programs the parity in the second memory group after the outputting of the completion notice.

4. The memory device according to claim 2 ,

wherein the partial data is least significant bit (LSB) data among the multi-bit data, and

wherein the logical operation includes an exclusive OR (XOR) operation performed while the program operation controller programs the multi-bit data into the first memory group through a multi-step program operation corresponding to a number of bits of the multi-bit data.

5. The memory device according to claim 2 ,

wherein the program operation controller is further configured to program the multi-bit data into the first memory group through a binary program operation and a foggy-fine program operation, and

wherein the partial data includes data programmed in the binary program operation.

6. The memory device according to claim 1 , wherein the program operation controller recovers the partial data based on programmed values, which correspond to the partial data in the first memory group and the parity in the second memory group, during the verification operation performed after power is resumed.

7. The memory device according to claim 6 , wherein the program operation includes an operation for determining whether the multi-bit data has been successively programmed based on a result of a verification operation after the recovered partial data is programmed in the first memory group.

8. The memory device according to claim 1 , wherein the program operation controller is further configured to determine a backup range based on an attribute of the multi-bit data, before the performing of the logical operation.

9. The memory device according to claim 8 , wherein the program operation controller is further configured to:

perform a recovery operation for an error in the partial data stored in the first memory group, and

back up the partial data among the multi-bit data in the second memory group during the recovery operation.

10. The memory device according to claim 1 , wherein the first memory group and the second memory group are included in different memory blocks of a single memory die.

11. The memory device according to claim 10 , wherein the program operation controller is included in the memory die.

12. The memory device according to claim 1 , wherein the program operation controller is coupled via a data channel to a memory die including the first memory group and the second memory group.

13. The memory device according to claim 1 , further comprising:

a cache buffer temporarily storing the partial data; and

plural page buffers coupled to the first memory group and the second memory group to store the partial data transferred from the cache buffer.

14. The memory device according to claim 13 , wherein the program operation controller includes a parity generation engine configured to generate the parity based on the partial data transferred from the cache buffer to the plural page buffers.

15. A memory system, comprising:

at least one memory die including:

a first memory group including plural first non-volatile memory cells storing multi-bit data; and

a second memory group including plural second non-volatile memory cells storing single-bit data; and

at least one program operation controller configured to:

build the multi-bit data based on write data inputted from an external device,

perform a logical operation regarding partial data among the multi-bit data to generate a parity,

program the parity in the second memory group after programming the partial data in the first memory group,

perform a verification operation regarding the partial data after a sudden power-off (SPO) occurs,

recover the partial data based on the parity and a result of the verification operation, and

program recovered partial data in the first memory group.

16. The memory system according to claim 15 , further comprising a controller coupled via a data channel to the at least one memory die and configured to receive the write data from the external device and determine a location for storing the multi-bit data in the first memory group.

17. The memory system according to claim 16 , wherein the controller is further configured to determine a backup range based on an attribute of the multi-bit data.

18. The memory system according to claim 17 , wherein the at least one program operation controller is included in the controller.

19. The memory system according to claim 18 , wherein the at least one program operation controller is further configured to:

perform a recovery operation for an error in the partial data stored in the first memory group, and

back up the partial data among the multi-bit data in the second memory group during the recovery operation.

20. The memory system according to claim 15 , wherein the at least one program operation controller is included in the at least one memory die.