Method of fabrication and control of nano-structure array by angle-resolved exposure in proximity-field nano patterning

1. A method for fabricating a nano-structure, the method comprising:

providing a phase mask having an uneven lattice structure to contact a photoresist film;

exposing the photoresist film to a light through the phase mask such that the light is obliquely incident on a surface of the photoresist film; and

developing the photoresist film to form a nano-structure,

wherein an incidence angle of the light on the photoresist film satisfies the following formula:

sin

-

1

⁡

[

1

n

i

⁢

(

2

⁢

λ

P

-

n

pr

)

]

⁢

〈

⊖

i

⁢

〈

sin

-

1

⁡

[

1

n

i

⁢

(

n

pr

-

λ

P

)

]

,

where n i is a refractive index of the phase mask, n pr is a refractive index of the photoresist film, λ is a wavelength of the light in vacuum, P is a period of the uneven lattice structure, and θ i is the incidence angle of the light on the photoresist film.

2. The method of claim 1 , wherein the uneven lattice structure has an one-dimensional lattice structure including protrusions extending in a direction, and

wherein the nano-structure includes a plurality of channels extending in a horizontal direction.

3. The method of claim 2 , wherein lines connecting four channels adjacent to each other in a cross-sectional view of the photoresist film form a rectangular shape.

4. The method of claim 1 , wherein the phase mask has a prism shape including an inclined surface with the uneven lattice structure, and

wherein the photoresist film is disposed on the inclined surface so that the light is irradiated on the photoresist film through a lower surface of the prism shape.

5. The method of claim 1 , wherein the phase mask includes polydimethylsiloxane (PDMS).

6. The method of claim 1 , wherein the phase mask includes a lattice portion including the uneven lattice structure and a film portion combined with the lattice portion, and

wherein the lattice portion has a modulus greater than the film portion.