Semiconductor structure

1. A semiconductor structure, comprising:

a first die, comprising a first interconnect structure and a first active pad electrically connected to the first interconnect structure;

a first bonding dielectric layer over the first die;

a first active bonding via in the first bonding dielectric layer, electrically connected to the first interconnect structure; and

a plurality of first dummy bonding vias in the first bonding dielectric layer, wherein the first dummy bonding vias laterally surround the first active bonding via and are electrically floating.

2. The semiconductor structure according to claim 1 , wherein the first active bonding via is electrically connected to the first active pad.

3. The semiconductor structure according to claim 1 , wherein the first active bonding via is electrically isolated from the first active pad.

4. The semiconductor structure according to claim 1 , wherein at least one of the first dummy bonding vias is disposed between the first active bonding via and the first active pad.

5. The semiconductor structure according to claim 1 , wherein a width of the first active bonding via is larger than a width of the first dummy bonding vias.

6. The semiconductor structure according to claim 1 , wherein a first surface of the first active bonding via is substantially coplanar with first surfaces of the first dummy bonding vias, and a second surface opposite to the first surface of the first active bonding via is substantially coplanar with second surfaces opposite to the first surfaces of the first dummy bonding vias.

7. A semiconductor structure, comprising:

a first die, comprising a substrate, a first interconnect structure and a first active pad electrically connected to the first interconnect structure, wherein the first interconnect structure is disposed between the substrate and the first active pad, the first active pad is disposed between the first interconnect structure and the first active bonding via, and the first interconnect structure comprises at least one metal line;

a first bonding dielectric layer over the first die;

at least one first dummy pad aside the first active pad in the first bonding dielectric layer, electrically isolated from the first interconnect structure; and

a first active bonding via and at least one first dummy bonding via in the first bonding dielectric layer, wherein the first active bonding via is electrically connected to the first active pad, and the at least one first dummy bonding via is electrically floating.

8. The semiconductor structure according to claim 7 , wherein the first active bonding via is in direct contact with the first active pad, and the at least one first dummy bonding via is in direct contact with the at least one first dummy pad.

9. The semiconductor structure according to claim 7 , wherein the at least one first dummy pad comprises a plurality of first dummy pads, and the first dummy pads laterally surround the first active pad.

10. The semiconductor structure according to claim 7 , wherein the at least one first dummy bonding via comprises a plurality of first dummy bonding vias, and the first dummy bonding vias laterally surround the first active bonding via.

11. The semiconductor structure according to claim 7 , wherein a first surface of the first active bonding via is substantially coplanar with a first surface of the at least one first dummy bonding via, and a second surface opposite to the first surface of the first active bonding via is substantially coplanar with a second surface opposite to the first surface of the at least one first dummy bonding via.

12. The semiconductor structure according to claim 7 , wherein a surface of the first active pad is substantially coplanar with a surface of the at least one first dummy pad.

13. The semiconductor structure according to claim 7 , wherein the first interconnect structure is disposed between the substrate and the at least one first dummy pad, the at least one first dummy pad is disposed between the first interconnect structure and the at least one first dummy bonding via.

14. A semiconductor structure, comprising:

a first die and a second die;

at least one first active bonding via and a plurality of first dummy bonding vias over the first die, wherein the first dummy bonding vias laterally surround the at least one first active bonding via and are electrically floating; and

at least one second active bonding via and a plurality of second dummy bonding vias over the second die, wherein the at least one second active bonding via is bonded to the at least one first active bonding via, and the second dummy bonding vias are bonded to the first dummy bonding vias respectively.

15. The semiconductor structure according to claim 14 , wherein a width of the at least one first active bonding via is substantially the same as a width of the at least one second active bonding via.

16. The semiconductor structure according to claim 14 , wherein a width of the at least one first active bonding via is larger than a width of the first dummy bonding vias.

17. The semiconductor structure according to claim 14 , wherein a width of the at least one second active bonding via is larger than a width of the second dummy bonding vias.

18. The semiconductor structure according to claim 14 , wherein a surface of the first active bonding via is substantially coplanar with surfaces of the first dummy bonding vias.

19. The semiconductor structure according to claim 14 , wherein the first die comprises at least one first conductive feature and a plurality of first dummy features electrically isolated from the at least one first conductive feature, the at least one first active bonding via is in direct contact with the at least one first conductive feature, and the first dummy bonding vias are in direct contact with the first dummy features respectively.

20. The semiconductor structure according to claim 19 , wherein a width of the at least one first conductive feature is larger than a width of the first dummy features.