Semiconductor device and method of forming the same
An apparatus includes a base structure having a first portion including a plurality of transistors and a second portion surrounding the first portion; a storage structure on the first portion of the base structure, the storage structure including a plurality of storage capacitors each coupled to a corresponding one of the plurality of transistors; an interface structure on the second portion of the base structure; and a peripheral structure on the interface structure; wherein the interface structure is divided into a plurality of insulating films and the plurality of insulating films are arranged away from each other to have a plurality of voids between the second portion of the base structure and the peripheral structure.
1. An apparatus comprising:
a base structure having a first portion including a plurality of transistors and a second portion surrounding the first portion;
a storage structure on the first portion of the base structure, the storage structure including a plurality of storage capacitors each coupled to a corresponding one of the plurality of transistors;
an interface structure on the second portion of the base structure; and
a peripheral structure on the interface structure;
wherein the interface structure is divided into a plurality of insulating films and the plurality of insulating films are arranged away from each other to have a plurality of voids between the second portion of the base structure and the peripheral structure.
2. The apparatus of claim 1 , wherein the interface structure comprises dielectric material.
3. The apparatus of claim 1 , wherein each void of the plurality of voids is surrounded by dielectric material, respectively.
4. The apparatus of claim 1 , wherein each void of the plurality of voids is arranged so as to be between the storage structure and the base structure, respectively.
5. The apparatus of claim 1 , wherein each of the storage capacitors comprises a first conductive film, a second conductive film, and a high-K film between the first conductive film and the second conductive film, respectively.