Chip parts
The present disclosure provides a chip part. The chip part includes: a capacitor portion, including a plurality of wall portions separated from each other by a plurality of trenches formed on the first main surface and having a lengthwise direction; a substrate body, formed around the capacitor portion using a portion of the semiconductor substrate; a lower electrode, disposed using at least a portion of the semiconductor substrate including the wall portions; a capacitive film, disposed along top and side surfaces of the plurality of wall portions; and an upper electrode, disposed on the capacitive film.
1 . A chip part, comprising:
a semiconductor substrate, having a first main surface and a second main surface opposite to the first main surface;
a capacitor portion, disposed on the first main surface of the substrate when viewed from a plan view and along a normal direction of the first main surface, wherein the capacitor portion includes a plurality of wall portions having a lengthwise direction and separated from each other by a trench formed on the first main surface;
a substrate body, formed around the capacitor portion using a portion of the semiconductor substrate, and connected to at least one of one end and another end of the plurality of wall portions in the lengthwise direction;
a lower electrode, formed by using at least a portion of the semiconductor substrate including the plurality of wall portions;
a capacitive film, disposed along top and side surfaces of the plurality of wall portions; and
an upper electrode, disposed on the capacitive film, wherein
the plurality of wall portions are formed of a plurality of pillar units,
each of the plurality of pillar units includes a central portion and three protruding portions extending from the central portion to three different directions in the plan view,
the plurality of wall portions are formed by connecting the three protruding portions of adjacent pillar units,
the substrate body further includes a dummy trench formed along a circumferential direction of the capacitor portion, and
the dummy trench includes an annular dummy trench formed in an annular shape and surrounding the capacitor portion.
2 . The chip part of claim 1 , wherein the annular dummy trench is formed in a quadrilateral annular shape, which integrally includes:
a pair of first linear portions, facing each other across the capacitor portion and extending along a first direction; and
a pair of second linear portions, facing each other across the capacitor portion and extending along a second direction crossing the first direction.
3 . The chip part of claim 2 , further comprising:
a plurality of trenches arranged in a first pitch along the first direction, wherein the pair of second linear portions are separated from the plurality of trenches in the first direction by a second pitch having a size between 90% and 110% of the first pitch.
4 . The chip part of claim 3 , wherein
the pair of first linear portions are separated from the plurality of trenches in the second direction by a third pitch having a size between 90% and 110% of the first pitch.
5 . The chip part of claim 2 , wherein corners of the annular dummy trench which are connection points between the first linear portions and the second linear portions, and are formed in a round shape.
6 . The chip part of claim 1 , wherein the dummy trench includes a pair of first linear trenches facing each other across the capacitor portion and extending along a first direction.
7 . The chip part of claim 6 , wherein the dummy trench includes a pair of second linear trenches facing each other across the capacitor portion, extending along a second direction crossing the first direction, and physically separated from the pair of first linear trenches.
8 . The chip part of claim 7 , further comprising:
a plurality of trenches arranged in a first pitch along the first direction, wherein
the pair of second linear trenches are separated from the plurality of trenches in the first direction by a fourth pitch having a size between 90% and 110% of the first pitch.
9 . The chip part of claim 8 , wherein
the pair of first linear trenches are separated from the plurality of trenches in the second direction by a fifth pitch having a size between 90% and 110% of the first pitch.
10 . The chip part of claim 1 , wherein the dummy trench is formed in only one row and outwardly from the capacitor portion.
11 . The chip part of claim 1 , wherein the dummy trench is formed in a plurality of rows and outwardly from the capacitor portion.
12 . The chip part of claim 1 , wherein the dummy trench has a same width as a width of the trench.
13 . The chip part of claim 1 , wherein
the capacitive film draws out toward a periphery of the capacitor portion and is further formed along an inner surface of the dummy trench, and
the chip part further includes an embedded conductor embedded in the dummy trench through the capacitor film.
14 . The chip part of claim 1 , wherein
in the semiconductor substrate, a plurality of trenches are arranged along a first direction crossing the lengthwise direction, and
the plurality of trenches includes:
a plurality of capacitor trenches, forming the capacitor portion; and
a first dummy trench, arranged outside the plurality of capacitor trenches in the first direction and not contributive to the capacitor portion.
15 . The chip part of claim 14 , further comprising a second dummy trench, which is
interposed by a boundary portion that extends across the plurality of capacitor trenches in the substrate body along the first direction,
provided one for each of the plurality of capacitor trenches, and
formed in a planar shape having continuity with a planar shape of each of the capacitor trenches along the lengthwise direction.
16 . The chip part of claim 1 , further comprising:
a first electrode, disposed on the first main surface of the semiconductor substrate and electrically connected to the upper electrode; and
a second electrode, disposed on the second main surface of the semiconductor substrate and electrically connected to the lower electrode,
wherein the first electrode has a bonding area directly above the capacitor portion to which a bonding member is bonded.
17 . The chip part of claim 1 , wherein the semiconductor substrate includes a silicon substrate.
18 . The chip part of claim 1 , wherein the capacitive film includes at least one selected from a group including of SiO 2 film, SiN film, ON film, ONO film, Al 2 O 3 film and Ti 3 O 5 film.