Open Czochralski furnace for single crystal growth
View Patent ↗The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a drum; a filler filled in the drum and configured to support a crucible; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the drum; and a cover plate mounted on a top of the temperature filed device and covering a top end of the drum.
1. A temperature field device for crystal growth, comprising:
a drum;
a filler filled in the drum and configured to support a crucible;
a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the drum; and
a cover plate mounted on a top of the temperature filed device and covering a top end of the drum.
2. The temperature field device of claim 1 , wherein a filling height of the filler is adjusted to make that a vertical distance between an upper edge of the crucible and an upper edge of a heater located outside the temperature field device is within 0˜+50 mm.
3. The temperature field device of claim 1 , wherein a tightness of the filler is adjusted to adjust a temperature gradient in the temperature field device.
4. The temperature field device of claim 1 , wherein a particle size of the filler is 5-200 mesh.
5. The temperature field device of claim 1 , wherein the filler includes at least one of a granule shaped material, a brick shaped material, or a felt shaped material.
6. The temperature field device of claim 1 , wherein the filler includes at least one of a zircon sand, a zirconia particle, an alumina particle, a zirconia felt, a zirconia brick, or an alumina brick.
7. The temperature field device of claim 1 , wherein the temperature field device further includes a second drum mounted outside the drum.
8. The temperature field device of claim 7 , wherein the filler is further filled in a space between the drum and the second drum.
9. The temperature field device of claim 7 , wherein a height of the second drum is larger than a height of the drum.
10. The temperature field device of claim 7 , wherein a height of the second drum is 600-1600 mm.
11. The temperature field device of claim 7 , further comprising a second cover plate covering a top end of the second drum.
12. The temperature field device of claim 11 , wherein a thickness of the second cover plate is within 10-40 mm.
13. The temperature field device of claim 7 , wherein the second cover plate includes:
a first through hole configured to allow a gas to enter into the temperature field device; and
a second through hole configured to allow the gas to exit from the temperature field device.
14. The temperature field device of claim 13 , wherein a distance between the first through hole and the second through hole is within 70-150 mm.
15. The temperature field device of claim 13 , wherein a rotation central axis of the first through hole or the second through hole is perpendicular to a horizontal plane or forms an angle of 3-20 degrees with a vertical line of the horizontal plane.
16. The temperature field device of claim 1 , wherein a height of the drum is 500-1500 mm.
17. The temperature field device of claim 1 , wherein a level requirement of the bottom plate is less than 0.5 mm/m, wherein the level requirement of the bottom plate refers to a height difference between two ends of the bottom plate per unit length.
18. The temperature field device of claim 1 , wherein a thickness of the cover plate is within 20-35 mm.
19. The temperature field device of claim 1 , wherein a concentricity among the drum, the bottom plate, and the cover plate is less than 1 mm.
20. The temperature field device of claim 1 , wherein a perpendicularity among the drum, the bottom plate, and the cover plate is less than 0.2°.