Photonic devices integrated with reflectors
The present disclosure generally relates to semiconductor devices for use in optoelectronic/photonic applications and integrated circuit (IC) chips. More particularly, the present disclosure relates to semiconductor devices having a reflector and a photonic component and a method of forming the same. The present disclosure provides a semiconductor device having a substrate, a photonic component arranged above the substrate, a bottom reflector arranged above the substrate and positioned below the photonic component, in which the bottom reflector has a plurality of grating structures configured to reflect electromagnetic waves towards the photonic component, and a top reflector arranged above the photonic component, in which the top reflector has a plurality of grating structures configured to reflect electromagnetic waves towards the photonic component.
1. A semiconductor device comprising:
a substrate;
a photonic component arranged above the substrate;
a first bottom reflector arranged above the substrate and positioned below the photonic component; and
a second bottom reflector arranged vertically between the first bottom reflector and the photonic component, wherein the first bottom reflector and the second bottom reflector have a plurality of grating structures configured to reflect electromagnetic waves towards the photonic component, and wherein the grating structures in the first bottom reflector have top surfaces, and the grating structures in the second bottom reflector is directly on the top surfaces of the grating structures in the first bottom reflector.
2. The semiconductor device of claim 1 , wherein the grating structures in the second bottom reflector includes a different material from the grating structures in the first bottom reflector.
3. The semiconductor device of claim 2 , wherein the grating structures in the first bottom reflector include a semiconductor material.
4. The semiconductor device of claim 3 , wherein the grating structures in the first bottom reflector include monocrystalline silicon and the grating structures in the second bottom reflector include polycrystalline silicon.
5. The semiconductor device of claim 3 , wherein the grating structures in the second bottom reflector include a metallic material.
6. The semiconductor device of claim 1 , wherein the grating structures in the second bottom reflector includes a same material as the grating structures in the first bottom reflector.
7. The semiconductor device of claim 1 , wherein the photonic component is a waveguide coupler.
8. The semiconductor device of claim 7 , wherein the waveguide coupler includes a dielectric material.
9. The semiconductor device of claim 7 , wherein the waveguide coupler is optically coupled to an adjacent waveguide body, the waveguide body being arranged above the substrate.
10. The semiconductor device of claim 7 , further comprising an insulating layer arranged upon the substrate, wherein the first bottom reflector is arranged upon the insulating layer.
11. The semiconductor device of claim 7 , further comprising a dielectric layer between the second bottom reflector and the waveguide coupler.
12. The semiconductor device of claim 1 , wherein the photonic component is a photodetector.
13. The semiconductor device of claim 12 , wherein the photodetector includes a germanium containing compound.
14. The semiconductor device of claim 12 , wherein the grating structures in the second bottom reflector have top surfaces, and the photodetector is directly on the top surfaces of the grating structures in the second bottom reflector.
15. The semiconductor device of claim 1 , wherein the grating structures in the first bottom reflector and the second bottom reflector have widths and pitches that are configured to have dimensions in the microscale.