Power module apparatus, cooling structure, and electric vehicle or hybrid electric vehicle
A power module apparatus includes a power module having a package configured to seal a perimeter of a semiconductor device, and a heat radiator bonded to one surface of the package; a cooling device having a coolant passage through which coolant water flows, in which the heat radiator is attached to an opening provided on a way of the coolant passage, wherein the heat radiator of the power module is attached to the opening of the cooling device so that a height (ha) and a height (hb) are substantially identical to each other. The power module in which the heat radiator is attached to the opening formed at the upper surface portion of the cooling device can also be efficiently cooled, and thereby it becomes possible to reduce degradation due to overheating.
1. A power semiconductor comprising:
a semiconductor device configured to switch electric power;
a first terminal group connected to a power terminal or an output terminal of the semiconductor device;
a second terminal group connected to a control terminal or a sense terminal of the semiconductor device; and
a sealing body configured to seal a perimeter of the semiconductor device and a part of the first terminal group and the second terminal group, wherein
the sealing body includes a heat radiator bonded surface to which a heat radiator is bonded at one surface side, wherein
the first terminal group extends only in a first horizontal direction which is a direction parallel to the heat radiator bonded surface and does not extend in a vertical direction orthogonal to the first horizontal direction,
the second terminal group extends in a second horizontal direction and then extends in a vertical direction which is a direction away from the heat radiator, and
the second horizontal direction in which the second terminal group horizontally extends is orthogonal to the first horizontal direction in which the first terminal group horizontally extends in plan view.
2. The power semiconductor according to claim 1 , wherein
the heat radiator is bonded to the heat radiator bonded surface via a bonding material.
3. The power semiconductor according to claim 1 , wherein
a circuit substrate is disposed on a surface opposite to the heat radiator bonded surface of the sealing body, and the second terminal group is inserted into the circuit substrate.
4. The power semiconductor according to claim 1 , wherein
the power terminal and the output terminal are extended from the sealing body in opposite directions to each other.
5. The power semiconductor according to claim 1 , wherein
the semiconductor device is a MOSFET including a source electrode and a control electrode formed on a front side surface thereof and a drain electrode formed on a back side surface thereof, and
the second terminal group comprises a source sense terminal electrically connected to the source electrode.
6. The power semiconductor according to claim 1 , wherein
the semiconductor device comprises a configuration of a module with the built-in half-bridge in which a first SiC MOSFET and a second SiC MOSFET are included as one module.
7. The power semiconductor according to claim 1 , wherein
the semiconductor device comprises first and second SiC MOSFETs and first and second diodes respectively connected in reversely parallel to the first and second SiC MOSFETs, as one module.
8. The power semiconductor according to claim 2 , wherein
the bonding material has a coefficient of thermal conductivity within a range of 0.5 W/mK to 300 W/mK.
9. The power semiconductor according to claim 3 , wherein
the circuit board is disposed on the sealing body via a heat radiating resin sheet.
10. The power semiconductor according to claim 3 , wherein
the circuit board comprises an insertion hole into which the second terminal group extended from the sealing body is inserted.
11. The power semiconductor according to claim 10 , wherein
the second terminal group is inserted into the insertion hole so as to be bent in the vertical direction.
12. The power semiconductor according to claim 1 , wherein
the power semiconductor comprises an IGBT, a diode, an Si based MOSFET, an SiC based MOSFET and a GaNFET or a combination thereof.
13. The power semiconductor according to claim 1 , wherein
a height of a portion of the first terminal group protruding from the sealing body and a height of the portion of the second terminal group protruding from the sealing body are different from each other.
14. The power semiconductor according to claim 3 , wherein
the circuit substrate is disposed in contact with the sealing body.
15. The power semiconductor according to claim 3 , wherein
a circuit for driving and controlling the semiconductor device is formed on the circuit substrate.
16. The power semiconductor according to claim 6 , wherein
the second terminal group comprises a first source sense terminal and a second source sense terminal, and
the first source sense terminal is electrically connected to a source electrode of the first SiC MOSFET and the second source sense terminal is electrically connected to a source electrode of the second SiC MOSFET.
17. The power semiconductor according to claim 1 , wherein
the first terminal group extends in the first horizontal direction so as to protrude from the heat radiator bonded to the heat radiator bonded surface in plan view.
18. The power semiconductor according to claim 1 , wherein
a height of a tip at an extended side of the first terminal group is lower than a height of the sealing body.