Power module apparatus, cooling structure, and electric vehicle or hybrid electric vehicle
A power module apparatus includes a power module having a package configured to seal a perimeter of a semiconductor device, and a heat radiator bonded to one surface of the package; a cooling device having a coolant passage through which coolant water flows, in which the heat radiator is attached to an opening provided on a way of the coolant passage, wherein the heat radiator of the power module is attached to the opening of the cooling device so that a height (ha) and a height (hb) are substantially identical to each other. The power module in which the heat radiator is attached to the opening formed at the upper surface portion of the cooling device can also be efficiently cooled, and thereby it becomes possible to reduce degradation due to overheating.
1. A power module device comprising:
a semiconductor device configured to switch electric power;
a first terminal group connected to a power terminal or an output terminal of the semiconductor device;
a second terminal group connected to a control terminal or a sense terminal of the semiconductor device;
a sealing body configured to seal a perimeter of the semiconductor device and a part of the first terminal group and the second terminal group; and
a heat radiator bonded to a heat radiator bonded surface which is one surface side of the sealing body and having heat radiation pins or heat radiation fins protruding in a direction at the heat radiator bonded surface side, wherein
the first terminal group extends only in a first horizontal direction which is a direction parallel to the heat radiator bonded surface, and
the first terminal group extends outside an outer periphery of the heat radiation body in plan view.
2. The power module device according to claim 1 , wherein the semiconductor device comprises a configuration of a module with the built-in half-bridge in which a first switching element and a second switching element are connected in series to be included as one module with a connection point between the first and second switching elements as an output.
3. The power module device according to claim 2 , wherein each of the first and second switching elements is an SiC MOSFET.
4. The power module device according to claim 2 , wherein the semiconductor device comprises first and second switching elements and first and second diodes respectively connected in reversely parallel to the first and second switching elements, as one module.
5. The power module device according to claim 1 , wherein a gate drive circuit substrate is disposed on a surface opposite to the heat radiator bonded surface of the sealing body, and the second terminal group extends toward the gate drive circuit substrate.
6. The power module device according to claim 5 , wherein the second terminal group is inserted into the gate drive circuit substrate and electrically connected to the gate drive circuit substrate.
7. The power module device according to claim 1 , further comprising:
a cooling device including a coolant passage through which coolant water flows from an inlet port to an outlet port, and an opening for inserting the heat radiation pins or heat radiation fins thereinto.
8. A power module apparatus comprising:
a plurality of power module devices, each comprising:
a semiconductor device configured to switch electric power,
a first terminal group connected to a power terminal or an output terminal of the semiconductor device,
a second terminal group connected to a control terminal or a sense terminal of the semiconductor device,
a sealing body configured to seal a perimeter of the semiconductor device and a part of the first terminal group and the second terminal group, and
a heat radiator bonded a heat radiator bonded surface which is one surface side of the sealing body and having heat radiation pins or heat radiation fins protruding in a direction opposite to the sealing body from the heat radiator bonded surface; and
a cooling device including a coolant passage through which coolant water flows from an inlet port to an outlet port, and a plurality of openings for respectively inserting the heat radiation pins or heat radiation fins of the plurality of power module devices thereinto, the openings each provided on a way of the coolant passage, the plurality of openings being arranged along a longitudinal direction of the coolant passage, wherein
the heat radiation pins or heat radiation fins of the plurality of power module devices are respectively inserted in the coolant passage through the plurality of openings, and
the first terminal groups of the plurality of power module devices extend in a direction orthogonal to an arrangement direction of the plurality of power module devices, and also extend outward rather than an outer periphery of the heat radiation body in plan view.
9. The power module apparatus according to claim 8 , wherein in each of the plurality of power module devices, the semiconductor device comprises first and second switching elements and first and second diodes respectively connected in reversely parallel to the first and second switching elements, as one module.
10. The power module apparatus according to claim 9 , wherein each of the first and second switching elements is an SiC MOSFET.
11. The power module apparatus according to claim 8 , wherein the direction orthogonal to the arrangement direction of the plurality of power module devices is a non-longitudinal direction of the cooling device, and the second terminal group extends in the arrangement direction.
12. The power module device according to claim 1 , wherein the first terminal group extends only in a first horizontal direction but does not extend in vertical direction orthogonal to the first horizontal direction.
13. The power module apparatus according to claim 8 , wherein the first terminal groups each extends only in a first horizontal direction but does not extend in vertical direction orthogonal to the first horizontal direction.
14. The power module apparatus according to claim 8 , wherein, in each of the plurality of power module devices:
a gate drive circuit substrate is disposed on a surface opposite to the heat radiator bonded surface of the sealing body, and the second terminal group extends toward the gate drive circuit substrate, and the second terminal group is inserted into the gate drive circuit substrate, and
the second terminal group extends toward the gate drive circuit substrate.
15. The power module device according to claim 5 , wherein the second terminal group extends from the sealing body in a second direction perpendicular to the first direction in which the first terminal group extends from the sealing body, and then extends toward the gate drive circuit substrate.
16. The power module apparatus according to claim 8 , wherein, in each of the plurality of power module devices,
the second terminal group extends from the sealing body in a second direction perpendicular to the first direction in which the first terminal group extends from the sealing body, and then extends toward the gate drive circuit substrate.
17. The power module device according to claim 1 , wherein a watertight element is disposed on a periphery of the opening of the cooling device so as to surround the periphery.
18. The power module device according to claim 17 , wherein a groove portion for fixing the watertight element is formed in the periphery of the opening.
19. The power module device according to claim 2 , wherein, among the first terminal group, a terminal electrically connected to the power terminal and a terminal electrically connected to the output are extended from the sealing body in opposite directions to each other.
20. The power module device according to claim 1 , wherein a height of a portion of the first terminal group protruding from the sealing body and a height of the portion of the second terminal group protruding from the sealing body, viewed in a thickness direction, are different from each other.
21. The power module device according to claim 1 , wherein a height of a tip at an extended side of the first terminal group, viewed in a thickness direction, is lower than a height of the sealing body.