Package with shifted lead neck

1. A semiconductor package comprising:

a pad and leads having a planar profile shaped from a planar base metal;

a semiconductor die attached to the pad;

a wire bond extending from the semiconductor die to a respective lead; and

mold compound covering the semiconductor die, the wire bond, and a first portion of the respective lead, wherein a second portion of the respective lead extends beyond the mold compound through a surface of the mold compound,

wherein a shape of the respective lead within the planar profile includes a lead neck within and adjacent to the mold compound and a lead leg adjacent to the lead neck and outside the mold compound,

wherein the lead neck forms a first side at least partially within the mold compound, the first side extending at a first angle of 30 to 60 degrees relative to the surface of the mold compound through which the lead neck extends,

wherein the lead neck forms a second side at least partially outside the mold compound, the second side adjacent the first side and extending at a second angle of 30 to 60 degrees relative to the surface of the mold compound through which the lead neck extends,

wherein the lead neck forms a third side at least partially within the mold compound, the third side opposite the first side and extending at a third angle of 120 to 150 degrees relative to the surface of the mold compound through which the lead neck extends, and

wherein the lead neck forms a fourth side at least partially outside the mold compound, the fourth side adjacent the second side and extending at a fourth angle of 120 to 150 degrees relative to the surface of the mold compound through which the lead neck extends.

2. The semiconductor package of claim 1 ,

wherein the mold compound forms mating surfaces with areas of the lead neck covered by the mold compound, and

wherein the mating surfaces engage the respective lead to isolate portions of the respective lead covered by the mold compound from pulling forces caused by bending the second portion of the respective lead.

3. The semiconductor package of claim 1 ,

wherein the lead leg forms a fifth side, the fifth side adjacent the second side and extending at a fifth angle of 85-95 degrees relative to the surface of the mold compound through which the lead neck extends, and

wherein the lead leg forms a sixth side, the sixth side opposite the fifth side, adjacent the fourth side and extending at a sixth angle of 85-95 degrees relative to the surface of the mold compound through which the lead neck extends.

4. The semiconductor package of claim 1 ,

wherein the first angle is at 40 to 50 degrees,

wherein the second angle is at 40 to 50 degrees,

wherein the third angle is at 130 to 140 degrees, and

wherein the fourth angle is at 130 to 140 degrees.

5. The semiconductor package of claim 1 ,

wherein the second angle is opposite the first angle such that the first side and the second side form a fifth angle of 60 to 120 degrees,

wherein the fourth angle is opposite the third angle such that the third side and the fourth side form a sixth angle of 240 to 300 degrees.

6. The semiconductor package of claim 1 ,

wherein the first side and the second side of the lead neck form a protrusion,

wherein the third side and the fourth side of the lead neck form a notch,

wherein the notch and the protrusion are each partially covered by the mold compound and partially outside the mold compound.

7. The semiconductor package of claim 1 , wherein the wire bond is encapsulated within the mold compound.

8. The semiconductor package of claim 1 ,

wherein the planar base metal is plated with a plated layer enabling metal-to-metal bonding and resistant to oxidation, and

wherein the wire bond is less resistant to oxidation than the plated layer.

9. The semiconductor package of claim 8 , wherein the wire bond includes a ball bond attached to the semiconductor die, and a stitch bond attached to the respective lead.

10. The semiconductor package of claim 1 ,

wherein the leads include at least five leads spaced from the pad by a gap, the planar profile further including a pad lead extending outside the mold compound from the pad, and

wherein shapes of each of the five leads and the pad lead within the planar profile include notches representing indents relative to lead legs of each lead and protrusions protruding outwardly relative to the lead legs of each lead.

11. The semiconductor package of claim 10 , wherein the notches and the protrusions of each of the five leads and the pad lead are partially covered by the mold compound and partially outside the mold compound.

12. The semiconductor package of claim 10 , wherein a minimum distance of the gap spacing the leads from the pad is no greater than 150 microns.

13. The semiconductor package of claim 1 , wherein portions of the leads covered by the mold compound are co-planar with the pad, while the portions of the leads outside the mold compound are bent out-of-plane.

14. The semiconductor package of claim 13 ,

wherein the respective lead forms a first out-of-plane bend outside and adjacent to the mold compound with a first out-of-plane angle between 80 and 90 degrees, and

wherein the respective lead forms a second out-of-plane bend outside the mold compound past the first out-of-plane bend with a second out-of-plane angle of between 80 and 90 degrees, the second out-of-plane angle opposite the first out-of-plane angle such that a distal end of the respective lead beyond the second out-of-plane bend is within 10 degrees of parallel with the pad.

15. The semiconductor package of claim 1 , wherein the pad and the leads are etched from the planar base metal.