Copper wire bond on gold bump on semiconductor die bond pad
A semiconductor package includes a conductive pad, a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die, a gold bump on the aluminum bond pad, a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump, a copper ball bond on the gold bump, a second intermetallic layer of copper and gold between the copper ball bond and the gold bump, a copper wire extending from the copper ball bond to the conductive pad, a stitch bond between the copper wire and the conductive pad.
1. A semiconductor package comprising:
a conductive pad;
a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die;
a gold bump on the aluminum bond pad;
a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump;
a copper ball bond on the gold bump;
a second intermetallic layer of copper and gold between the copper ball bond and the gold bump;
a copper wire extending from the copper ball bond to the conductive pad; and
a stitch bond between the copper wire and the conductive pad.
2. The semiconductor package of claim 1 , wherein a thickness of the first intermetallic layer is no greater than 4 micrometers (μm).
3. The semiconductor package of claim 2 , wherein a thickness of the second intermetallic layer is no greater than 1 μm.
4. The semiconductor package of claim 1 , wherein the second intermetallic layer includes Cu 3 Au adjacent to the copper wire, CuAu 3 adjacent to the gold bump, and CuAu between the Cu 3 Au and the CuAu 3 .
5. The semiconductor package of claim 1 ,
wherein the gold bump is of at least 99% purity, and
wherein the copper wire is of at least 99% purity.
6. The semiconductor package of claim 1 , further comprising mold compound covering the aluminum bond pad, the gold bump, the ball bond, the copper wire, the stitch bond and the conductive pad.
7. The semiconductor package of claim 6 , further comprising a lead including the conductive pad, wherein the lead extends to an exterior surface of the mold compound.
8. The semiconductor package of claim 1 , wherein the semiconductor die is a first semiconductor die, and the aluminum bond pad is a first bond pad, the semiconductor package further including a second semiconductor die, wherein the conductive pad is a second bond pad of the second semiconductor die.
9. A semiconductor package comprising:
a semiconductor die with a metallic bond pad over a silicon nitride or oxynitride layer of the semiconductor die;
a gold bump attached to the metallic bond pad; and
a copper wire attaching the gold bump to a conductive pad.
10. The semiconductor package of claim 9 , wherein the metallic bond pad of the semiconductor die is formed from aluminum.
11. The semiconductor package of claim 10 ,
wherein the gold bump attached to the metallic bond pad creates an intermetallic layer of gold and aluminum, and
wherein the copper wire attached to the gold bump increases a thickness of the intermetallic layer by no more than fifty percent.
12. The semiconductor package of claim 11 , wherein the thickness of the intermetallic layer is no greater than 4 micrometers (μm).
13. The semiconductor package of claim 11 ,
wherein the intermetallic layer is a first intermetallic layer,
wherein the copper wire attached to the gold bump creates a second intermetallic layer of copper and gold, and
wherein a thickness of the second intermetallic layer is no greater than 1 micrometers (μm).
14. The semiconductor package of claim 13 , wherein the intermetallic layer includes Cu 3 Au adjacent to the copper wire, CuAu 3 adjacent to the gold bump, and CuAu between the Cu 3 Au and the CuAu 3 .
15. The semiconductor package of claim 10 , wherein the semiconductor die is a first semiconductor die, and the aluminum bond pad is a first bond pad, the semiconductor package further including a second semiconductor die, wherein the conductive pad is a second bond pad of the second semiconductor die.
16. The semiconductor package of claim 9 ,
wherein the gold bump is of at least 99% purity, and
wherein the copper wire is of at least 99% purity.
17. The semiconductor package of claim 9 , further comprising a mold compound covering the semiconductor die, the metallic bond pad, the gold bump, the copper wire and the conductive pad.
18. The semiconductor package of claim 9 , further comprising a lead including the conductive pad, wherein the lead extends to an exterior surface of the mold compound.
19. The semiconductor package of claim 9 , further wherein the copper wire is stitch bonded to the conductive pad.
20. The semiconductor package of claim 19 , further comprising a mold compound covering the semiconductor die, the metallic bond pad, the gold bump, the copper wire and the conductive pad.
21. A semiconductor package comprising:
a semiconductor die with a first metal bond pad over a dielectric layer of the semiconductor die;
a second metal bump on the first metal bond pad;
a first intermetallic layer of the first metal and the second metal between the first metal bond pad and the second metal bump;
a third metal ball bond on the second metal bump, wherein the second metal is softer than the third metal;
a second intermetallic layer of the third metal and the second metal between the third metal ball bond and the second metal bump; and
a third metal wire extending from the second metal ball bond to a conductive pad.
22. The semiconductor package of claim 21 , further including:
a stitch bond between the third metal wire and the conductive pad.
23. The semiconductor package of claim 21 , wherein the first metal is aluminum, the second metal is gold and the third metal is copper.
24. The semiconductor package of claim 21 , wherein a thickness of the first intermetallic layer is greater than a thickness of the second intermetallic layer.