Palladium-coated copper bonding wire, manufacturing method of palladium-coated copper bonding wire, wire bonding structure using the same, semiconductor device and manufacturing method thereof
A Pd-coated Cu bonding wire of an embodiment contains Pd of 1.0 to 4.0 mass %, and a S group element of 50 mass ppm or less in total (S of 5.0 to 12.0 mass ppm, Se of 5.0 to 20.0 mass ppm, or Te of 15.0 to 50 mass ppm). At a crystal plane of a cross section of the wire, a <100> orientation ratio is 15% or more, and a <111> orientation ratio is 50% or less. When a free air ball is formed on the wire and a tip portion is analyzed, a Pd-concentrated region is observed on the surface thereof.
1. A palladium-coated copper bonding wire for ball bonding, comprising: a core material containing copper as a main component; and a palladium layer on the core material, and containing a sulfur group element, wherein:
the palladium-coated copper bonding wire contains, relative to the total of copper, palladium, and the sulfur group element:
palladium of 1.0 mass % or more and 4.0 mass % or less; and the sulfur group element of 50 mass ppm or less in total, the sulfur group element including
sulfur of 5.0 mass ppm or more and 12.0 mass ppm or less,
selenium of 5.0 mass ppm or more and 20.0 mass ppm or less, or
tellurium of 15.0 mass ppm or more and 50.0 mass ppm or less;
in crystal orientations <hkl> in a wire longitudinal direction at a crystal plane of a cross section of the palladium-coated copper bonding wire, a <100> orientation ratio is 15% or more in total, and a <111> orientation ratio is 50% or less, the <100> orientation and the <111> orientation including an orientation with an angular difference relative to the wire longitudinal direction of within 15°; and
wherein the palladium-coated copper bonding wire is configured to form a free air ball on a tip of the palladium-coated copper bonding wire during ball bonding, and the free air ball includes a palladium-concentrated region containing palladium of 6.5 atom % or more and 30.0 atom % or less relative to the total of copper and palladium in a range from a surface of a tip portion of the free air ball to 5.0 nm or more and 100.0 nm or less in a depth direction.
2. The palladium-coated copper bonding wire according to claim 1 , wherein the core material contains one or more of trace elements selected from P, Au, Pd, Pt, Ni, Ag, Rh, In, Ga, and Fe, of 1 mass ppm or more and 3 mass % or less in total relative to the entire core material.
3. The palladium-coated copper bonding wire according to claim 1 , wherein the core material contains one or more of trace elements selected from P, Au, Pd, Pt, Ni, Ag, Rh, In, Ga, and Fe, wherein the core material contains the trace element including at least one of Au, Pd, Pt, Ni, and Rh of 0.05 mass % or more and 3 mass % or less, the trace element including at least one of In and Ga of 0.01 mass % or more and 0.7 mass % or less, the trace element including P of 5 mass ppm or more and 500 mass ppm or less, or the trace element including at least one of Ag and Fe of 1 mass ppm or more and 100 mass ppm or less.
4. The palladium-coated copper bonding wire according to claim 1 , wherein the palladium-coated copper bonding wire contains palladium derived from the palladium layer of 1.0 mass % or more and 2.5 mass % or less relative to the total of copper, palladium, and the sulfur group element.
5. The palladium-coated copper bonding wire according to claim 1 , wherein the palladium-coated copper bonding wire has a diameter of 10 μm or more and 25 μm or less.
6. The palladium-coated copper bonding wire according to claim 1 , wherein the free air ball is formed by applying a discharge current of 65 mA to the palladium-coated copper bonding wire in the presence of a mixed gas of nitrogen and hydrogen, and the free air ball has a diameter which is 1.8 times a diameter of the palladium-coated copper bonding wire.
7. The palladium-coated copper bonding wire according to claim 1 , wherein the concentration of palladium of the palladium-concentrated region is measured by an Auger electron spectroscopy analysis under the following conditions: an acceleration voltage of a primary electron beam: 10 kV; a measurement region calculated from a set value: 15 μm 2 or more and 20 μm 2 or less; an acceleration voltage of argon ion for sputtering: 1 kV; and a sputtering rate: 2.5 nm/minute (in terms of SiO 2 ).
8. The palladium-coated copper bonding wire according to claim 1 , further comprising a gold layer on the palladium layer.
9. The palladium-coated copper bonding wire according to claim 1 , wherein the palladium-coated copper bonding wire contains sulfur(S) of 6.0 mass ppm or more and 10.0 mass ppm or less relative to the entire wire.
10. The palladium-coated copper bonding wire according to claim 1 , wherein the palladium-coated copper bonding wire contains selenium (Se) of 6.0 mass ppm or more and 15.0 mass ppm or less relative to the entire wire.
11. The palladium-coated copper bonding wire according to claim 1 , wherein the palladium-coated copper bonding wire contains tellurium (Te) of 16.0 mass ppm or more and 45.0 mass ppm or less relative to the entire wire.
12. A semiconductor device, comprising:
a semiconductor chip; an aluminum-containing aluminum electrode provided on the semiconductor chip; a gold or silver-coated external electrode provided outside the semiconductor chip; and a bonding wire connecting the aluminum electrode and a surface of the external electrode, wherein the bonding wire is made of the palladium-coated copper bonding wire according to claim 1 .
13. A manufacturing method of a semiconductor device, the semiconductor device comprising: a semiconductor chip; an aluminum-containing aluminum electrode provided on the semiconductor chip; a gold or silver-coated external electrode provided outside the semiconductor chip; and a bonding wire connecting the aluminum electrode and a surface of the external electrode, wherein
the bonding wire is a palladium-coated copper bonding wire including: a core material containing copper as a main component; and a palladium layer on the core material, and containing a sulfur group element, wherein:
the palladium-coated copper bonding wire contains, relative to the total of copper, palladium, and the sulfur group element:
palladium of 1.0 mass % or more and 4.0 mass % or less; and the sulfur group element of 50 mass ppm or less in total, the sulfur group element including
sulfur of 5.0 mass ppm or more and 12.0 mass ppm or less,
selenium of 5.0 mass ppm or more and 20.0 mass ppm or less, or
tellurium of 15.0 mass ppm or more and 50.0 mass ppm or less;
in crystal orientations <hkl> in a wire longitudinal direction at a crystal plane of a cross section of the palladium-coated copper bonding wire, a <100> orientation ratio is 15% or more in total, and a <111> orientation ratio is 50% or less, the <100> orientation and the <111> orientation including an orientation with an angular difference relative to the wire longitudinal direction of within 15°; and
wherein the palladium-coated copper bonding wire is configured to form a free air ball on a tip of the palladium-coated copper bonding wire, and the free air ball includes a palladium-concentrated region containing palladium of 6.5 atom % or more and 30.0 atom % or less relative to the total of copper and palladium, in a range from a surface of a tip portion of the free air ball to 5.0 nm or more and 100.0 nm or less in a depth direction, and
the manufacturing method comprising:
forming the free air ball at the tip of the palladium-coated copper bonding wire;
ball-bonding the palladium-coated copper bonding wire to the aluminum electrode via the free air ball; and
making a portion of the palladium-coated copper bonding wire apart from the free air ball by a length of the palladium-coated copper bonding wire to be bonded to the surface of the external electrode.