Chamfered die of semiconductor package and method for forming the same
A semiconductor device includes a die, an encapsulant over a front-side surface of the die, a redistribution structure on the encapsulant, a thermal module coupled to the back-side surface of the die, and a bolt extending through the redistribution structure and the thermal module. The die includes a chamfered corner. The bolt is adjacent to the chamfered corner.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a seal ring on a die;
chamfering a corner of the die, wherein a straight line edge of the chamfered corner is parallel to a portion of the seal ring in a top view, and wherein the die has a shape of an octagon in the top view;
applying an encapsulant around the die; and
forming a redistribution structure on the die and the encapsulant.
2. The method of claim 1 , further comprising inserting a bolt through the redistribution structure and the encapsulant, wherein the bolt is adjacent to the chamfered corner of the die.
3. The method of claim 1 , wherein chamfering the corner of the die is performed using a laser saw.
4. The method of claim 3 , wherein the laser saw has a wavelength in a range of 490 nm to 570 nm.
5. The method of claim 3 , wherein the laser saw performs the chamfering of the corner with a power in a range of 10 W to 20 W.
6. The method of claim 3 , wherein the laser saw performs the chamfering of the corner with an activation time in a range of 3 seconds to 3 o seconds.
7. The method of claim 1 , wherein an angle θ between a bottom of the die and a chamfered face of the chamfered corner of the die is in a range of 30° to 90°.
8. A method of manufacturing a semiconductor device, the method comprising:
chamfering a first corner of a first die, wherein the first die comprises a seal ring, and wherein an edge of the chamfered first corner is parallel to a portion of the seal ring;
encapsulating the first die with an encapsulant;
forming a redistribution structure over the encapsulant, wherein forming the redistribution structure comprises forming layers of metallization patterns and dielectric layers therebetween;
forming a hole through the redistribution structure and the encapsulant, the hole being adjacent the chamfered first corner; and
attaching a thermal module to the redistribution structure with a bolt, the thermal module being on a back side of the first die opposite the redistribution structure, the bolt extending through the hole.
9. The method of claim 8 , wherein chamfering the first corner of the first die comprises using a laser saw.
10. The method of claim 8 , wherein chamfering the first corner of the first die comprises forming a triangular chamfered surface.
11. The method of claim 8 , wherein chamfering the first corner of the first die comprises forming a rectangular chamfered surface.
12. The method of claim 8 , wherein chamfering the first corner of the first die comprises forming a trapezoidal chamfered surface.
13. The method of claim 8 , further comprising chamfering the top edges of the first die.
14. The method of claim 8 , further comprising chamfering a second corner, a third corner, and a fourth corner of the first die.
15. A method of manufacturing a semiconductor device, the method comprising:
chamfering a first corner of a first die, a second corner of a second die, a third corner of a third die, and a fourth corner of a fourth die;
encapsulating the first die, the second die, the third die, and the fourth die with an encapsulant, wherein the chamfered first corner, the chamfered second corner, the chamfered third corner, and the chamfered fourth corner form a diamond shape in a top view, the encapsulant filling the diamond shape;
forming a redistribution structure on the encapsulant, the first die, the second die, the third die, and the fourth die;
forming a hole through the redistribution structure and the diamond shape filled by the encapsulant; and
inserting a bolt through the hole, wherein the bolt overlaps a first space filled by the first corner of the first die prior to the chamfering of the first corner.
16. The method of claim 15 , wherein the chamfered first corner comprises a straight line shape in a top view.
17. The method of claim 15 , wherein the chamfered first corner comprises a concave shape in a top view.
18. The method of claim 15 , wherein the chamfered first corner comprises a convex shape in a top view.
19. The method of claim 15 , wherein the chamfered first corner comprises an inverted corner in a top view.
20. The method of claim 15 , wherein the bolt further overlaps a second space filled by the second corner of the second die prior to the chamfering of the second corner.