Vertical interconnect features and methods of forming
Vertical interconnect structures and methods of forming are provided. The vertical interconnect structures may be formed by partially filling a first opening through one or more dielectric layers with layers of conductive materials. A second opening is formed in a dielectric layer such that a depth of the first opening after partially filling with the layers of conductive materials is close to a depth of the second opening. The remaining portion of the first opening and the second opening may then be simultaneously filled.
1. A semiconductor structure comprising:
a first dielectric layer on a substrate;
a second dielectric layer over the first dielectric layer;
a first conductive element extending through the first dielectric layer and the second dielectric layer, the first conductive element comprising:
a first conductive feature in the first dielectric layer connected to a first electrode; and
a second conductive feature in the second dielectric layer connected to the first conductive feature; and
a second conductive element extending through the first dielectric layer and the second dielectric layer, the second conductive element comprising:
a lower conductive layer connected to a second electrode, the lower conductive layer being in the first dielectric layer; and
an intermediate conductive layer over the lower conductive layer, the intermediate conductive layer being in the first dielectric layer; and
an upper conductive layer in the second dielectric layer, wherein the intermediate conductive layer is interposed between the upper conductive layer and the lower conductive layer, wherein a conductive material in the upper conductive layer of the second conductive element is a same material as the second conductive feature of the first conductive element, wherein upper surfaces of the upper conductive layer, the second conductive feature, and the second dielectric layer are planar, wherein the second electrode is a gate of a transistor.
2. The semiconductor structure of claim 1 , wherein the first electrode is a source/drain region of the transistor.
3. The semiconductor structure of claim 1 , wherein the lower conductive layer contacts the first dielectric layer.
4. The semiconductor structure of claim 3 , wherein the intermediate conductive layer contacts the first dielectric layer.
5. The semiconductor structure of claim 4 , wherein the upper conductive layer contacts the second dielectric layer.
6. The semiconductor structure of claim 1 , wherein sidewalls of the upper conductive layer are completely free of the lower conductive layer.
7. The semiconductor structure of claim 1 , wherein the lower conductive layer comprises a first sublayer and a second sublayer.
8. The semiconductor structure of claim 7 , wherein the first sublayer comprises Ti layer, and wherein the second sublayer comprises a TiN layer.
9. A semiconductor structure comprising:
a first dielectric layer on a substrate;
a second dielectric layer over the first dielectric layer; and
a first conductive element and a second conductive element extending through the first dielectric layer and the second dielectric layer, wherein the first conductive element contacts a first conductive feature, the first conductive feature being below the first dielectric layer, wherein the second conductive element contacts a second conductive feature, the second conductive feature being below the first dielectric layer, wherein the first conductive element has a first upper layer and a first lower structure below the first upper layer, the second conductive element has a second upper layer and a second lower structure below the second upper layer, wherein the first upper layer and the second upper layer have a same material composition, wherein the first lower structure has fewer layers than the second lower structure, wherein the first conductive feature is a source/drain region of a transistor, and wherein the second conductive feature is a gate of the transistor.
10. The semiconductor structure of claim 1 , wherein the second electrode is spaced apart from the first dielectric layer, and wherein the first electrode physically contacts the first dielectric layer.
11. The semiconductor structure of claim 9 , wherein the second conductive element comprises a tungsten layer below the second upper layer.
12. The semiconductor structure of claim 11 , wherein the second conductive element comprises a TiN layer below the tungsten layer, wherein the tungsten layer and the TiN layer directly contacts the first dielectric layer.
13. The semiconductor structure of claim 9 , wherein the first upper layer and the second upper layer comprises a polycrystalline tungsten layer.
14. The semiconductor structure of claim 9 , wherein the second conductive element comprises a lower conductive layer having a thickness in a range from 2 nm to 5 nm directly on the second conductive feature.
15. The semiconductor structure of claim 9 , wherein the first lower structure has a bottom surface below a bottom surface of the first dielectric layer, and wherein the second lower structure has a bottom surface coplanar with the bottom surface of the first dielectric layer.
16. A semiconductor structure comprising:
a first conductive feature;
a second conductive feature;
a first dielectric layer over the first conductive feature and the second conductive feature, the first conductive feature being spaced apart from the first dielectric layer, the second conductive feature physically contacting the first dielectric layer;
a second dielectric layer over the first dielectric layer;
a first conductive element extending from an upper surface of the second dielectric layer to the first conductive feature, wherein the first conductive element comprises a first lower conductive layer and a first upper conductive layer over the first lower conductive layer; and
a second conductive element extending from the upper surface of the second dielectric layer to the second conductive feature, wherein the second conductive element comprises a second lower conductive layer and a second upper conductive layer over the second lower conductive layer, wherein the first upper conductive layer and the second upper conductive layer comprise a same material layer, wherein the first lower conductive layer is thicker than the second lower conductive layer.
17. The semiconductor structure of claim 16 , wherein the second lower conductive layer comprises an intermediate layer, wherein the intermediate layer contacts the first dielectric layer.
18. The semiconductor structure of claim 17 , wherein the second lower conductive layer contacts the first dielectric layer.
19. The semiconductor structure of claim 16 , wherein the second upper conductive layer does not extend into the first dielectric layer.
20. The semiconductor structure of claim 16 , wherein the first upper conductive layer does not extend into the first dielectric layer.