Substrate processing apparatus and substrate processing method

1. A substrate processing apparatus comprising:

a chamber having a container including at least one substrate-heating region and at least one substrate-cooling region;

a heating mechanism configured to heat a first substrate in the at least one substrate-heating region;

a cooling mechanism configured to cool a second substrate in the at least one substrate-cooling region while the first substrate is being heated;

a partition provided in the container and configured to separate the at least one substrate-heating region and the at least one substrate-cooling region from each other in terms of heat and pressure;

a sealer provided in the at least one substrate-cooling region and configured to seal a substrate when cooling the substrate; and

a transfer mechanism configured to transfer the substrate between the at least one substrate-heating region and the at least one substrate-cooling region,

wherein the sealer includes a first movable member and a second movable member, and

wherein the first movable member and the second movable member are configured to approach each other when the substrate is cooled by the cooling mechanism so as to seal the substrate, and are configured to be separated from each other when the substrate is transferred by the transfer mechanism so as to release the seal.

2. The substrate processing apparatus of claim 1 , wherein the transfer mechanism includes a holder configured to hold a plurality of substrates, and a rotary mechanism configured to rotate the holder.

3. The substrate processing apparatus of claim 2 , wherein the first movable member and the second movable member have seal members on end faces facing the holder, respectively, and

wherein the first movable member and the second movable member are configured to seal the substrate when the substrate is cooled by the cooling mechanism by approaching each other and bringing the seal members into contact with the holder.

4. The substrate processing apparatus of claim 3 , wherein the at least one substrate-heating region includes at least one substrate temperature-raising region and at least one substrate heat-insulating region, and

wherein the heating mechanism includes a temperature-raising mechanism configured to raise a temperature of the substrate in the at least one substrate temperature-raising region to a sublimation temperature, and a heat-insulating mechanism configured to maintain the temperature of the substrate in the at least one substrate heat-insulating region at the sublimation temperature.

5. The substrate processing apparatus of claim 4 , wherein the temperature-raising mechanism includes a radiation source configured to emit light having a specific wavelength.

6. The substrate processing apparatus of claim 5 , wherein the heat-insulating mechanism includes at least one of a resistance heating element, a radiation source configured to emit light having a specific wavelength, and a heating gas supply element.

7. The substrate processing apparatus of claim 6 , further comprising a controller configured to simultaneously operate the temperature-raising mechanism, the heat-insulating mechanism, and the cooling mechanism.

8. The substrate processing apparatus of claim 7 , wherein the chamber has a substrate transfer port provided in the at least one substrate-cooling region and configured to perform delivery of the substrate to and from an outside.