Display device
The power consumption of a display device is reduced. The power consumption of a driver circuit in a display device is reduced. A pixel included in the display device includes a display element. The pixel is configured to have a function of retaining a first voltage corresponding to a first input pulse signal and a function of driving the display element with a third voltage obtained by addition of a second voltage corresponding to a second input pulse signal to the first voltage.
1. A semiconductor device comprising:
a pixel comprising:
a display element; and
a transistor electrically connected to the display element,
wherein the display element comprises:
a first semiconductor layer;
a light-emitting layer over the first semiconductor layer;
a second semiconductor layer over the light-emitting layer;
a first electrode over and in contact with the first semiconductor layer; and
a second electrode over and in contact with the second semiconductor layer,
wherein an insulating layer is in contact with a top surface of the first electrode and a top surface and a side surface of the second electrode, and
wherein a resin layer is in contact with the insulating layer.
2. The semiconductor device according to claim 1 ,
wherein the first semiconductor layer is an n-type semiconductor layer, and
wherein the second semiconductor layer is a p-type semiconductor layer.
3. The semiconductor device according to claim 1 ,
wherein the pixel is configured to retain a first voltage corresponding to a first pulse signal and is configured to drive the display element with a third voltage obtained by addition of a second voltage corresponding to a second pulse signal to the first voltage,
wherein the third voltage is higher than the first voltage, and
wherein the third voltage is higher than the second voltage.
4. A semiconductor device comprising:
a pixel comprising:
a display element; and
a transistor,
wherein an electrode layer is electrically connected to one of a source and a drain of the transistor,
wherein the electrode layer is electrically connected to an electrode of the display element through a bump,
wherein the bump is positioned in an opening of a partition, and
wherein the bump has a width larger than a width of the opening of the partition.
5. The semiconductor device according to claim 4 ,
wherein the display element comprises:
a first semiconductor layer;
a light-emitting layer over the first semiconductor layer; and
a second semiconductor layer over the light-emitting layer.
6. The semiconductor device according to claim 5 ,
wherein the first semiconductor layer is an n-type semiconductor layer, and
wherein the second semiconductor layer is a p-type semiconductor layer.
7. The semiconductor device according to claim 1 ,
wherein the pixel is configured to retain a first voltage corresponding to a first pulse signal and is configured to drive the display element with a third voltage obtained by addition of a second voltage corresponding to a second pulse signal to the first voltage,
wherein the third voltage is higher than the first voltage, and
wherein the third voltage is higher than the second voltage.
8. A semiconductor device comprising:
a pixel comprising:
a display element;
a transistor electrically connected to the display element; and
an insulating layer between the display element and the transistor,
wherein the insulating layer is in contact with a top surface of a first electrode of the display element and a top surface and a side surface of a second electrode of the display element, and
wherein a distance between a substrate and the first electrode is different from a distance between the substrate and the second electrode.