Film forming method and film forming apparatus

1. A film forming method of forming a film on a substrate top face including a first region in which a metal or semiconductor is exposed and a second region in which an insulator is exposed, the film forming method comprising:

a self-assembled monolayer (SAM) forming process of forming a SAM film of a perfluoropolyether group-containing compound represented by formula (1) or (2) below on the first region; and

a film growth process of forming a predetermined film on the second region after execution of the SAM forming process, wherein

the metal or semiconductor is at least one selected from a group consisting of tungsten, ruthenium, germanium, silicon, and molybdenum,

the insulator is at least one selected from a group consisting of aluminum oxide, hafnium oxide, and zirconia,

formulae (1) and (2) are as follows:

(Rf-PFPE) α′ -X-(A) α   (1)

(A) α -X-PFPE-X-(A) α   (2)

in formula (1), Rf is an alkyl group having 1 to 16 carbon atoms optionally substituted with one or more fluorine atoms, and

in formulae (1) and (2):

PFPE is —(OC 6 F 12 ) a —(OC 5 F 10 ) b —(OC 4 F 8 ) c —(OC 3 F 6 ) d —(OC 2 F 4 ) e —(OCF 2 ) f —, where a, b, c, d, e, and f are integers of 0 or more and 200 or less, and the sum of a, b, c, d, e, and f is at least 1,

A is —COOH,

X is a single bond or a di- to deca-valent organic group, and

α is an integer of 1 to 9, and α′ is an integer of 1 to 9.

2. The film forming method according to claim 1 , wherein

the perfluoropolyether group-containing compound has a number average molecular weight of 10,000 or less, and

the SAM film is formed by vapor deposition.

3. The film forming method according to claim 1 , wherein the perfluoropolyether group-containing compound has a number average molecular weight of 2,000 to 10,000.

4. The film forming method according to claim 1 , further comprising, before execution of the film growth process, an excess SAM removing process of removing the SAM film formed on the second region.

5. The film forming method according to claim 1 , further comprising, before execution of the SAM forming process, a cleaning process of cleaning the substrate top face.

6. The film forming method according to claim 1 , further comprising, after execution of the film growth process, a SAM removing process of removing the SAM film formed on the first region.

7. A film forming apparatus configured to form a film on a substrate top face including a first region in which a metal or semiconductor is exposed and a second region in which an insulator is exposed, the film forming apparatus comprising:

a unit configured to form a self-assembled monolayer (SAM) film of a perfluoropolyether group-containing compound represented by formula (1) or (2) below on the first region; and

a unit configured to form a predetermined film on the second region after the SAM film is formed, wherein

the metal or semiconductor is at least one selected from the group consisting of tungsten, ruthenium, germanium, silicon, and molybdenum,

the insulator is at least one selected from the group consisting of aluminum oxide, hafnium oxide, and zirconia,

formulae (1) and (2) are as follows:

(Rf-PFPE) α′ -X-(A) α   (1)

(A) α -X-PFPE-X-(A) α   (2)

in formula (1), Rf is an alkyl group having 1 to 16 carbon atoms optionally substituted with one or more fluorine atoms, and

in formulae (1) and (2):

PFPE is —(OC 6 F 12 ) a —(OC 5 F 10 ) b —(OC 4 F 8 ) c —(OC 3 F 6 ) d —(OC 2 F 4 ) e —(OCF 2 ) f —, where a, b, c, d, e, and f are integers of 0 or more and 200 or less, and the sum of a, b, c, d, e, and f is at least 1,

A is —COOH,

X is a single bond or a di- to deca-valent organic group, and

α is an integer of 1 to 9, and α′ is an integer of 1 to 9.