Semiconductor device
View Patent ↗A semiconductor device according to the present invention includes: a circuit board; a semiconductor element having a main electrode; a metal frame; and a metal plate having a flat plate shape, the metal plate being disposed between the metal frame and the main electrode, wherein the metal plate and a conductive bonding material, form a stress relaxation structure which relaxes a stress applied to metal plate and the conductive bonding material, disposed between the metal frame and the semiconductor element, and the stress relaxation structure is configured such that a thickness of the metal plate is smaller than a thickness of the metal frame, and at least one convex portion is formed on the metal plate at a position which corresponds to the main electrode. The semiconductor device according to the present invention can relax a stress applied to a conductive bonding material between a semiconductor element and a metal frame even when a relatively thick metal frame is used.
1. A semiconductor device comprising:
a circuit board;
a semiconductor element mounted on the circuit board;
a connector electrically connected to a main electrode of the semiconductor element; and
a metal plate having a flat plate shape, the metal plate disposed between the connector and the main electrode, wherein
the metal plate has at least one convex portion protruding toward a side of the main electrode,
the connector is electrically connected to the main electrode via a first conductive bonding material disposed between the main electrode and the metal plate, the metal plate, and a second conductive bonding material disposed between the metal plate and the connector, and
the metal plate is configured to relax a stress applied to the first conductive bonding material and the second conductive bonding material from the circuit board and the semiconductor element.
2. The semiconductor device according to claim 1 , wherein the metal plate is a flat plate having a thickness smaller than a thickness of the connector, and is elastically deformable in a plate thickness direction.
3. The semiconductor device according to claim 1 , wherein the metal plate is disposed in a state where the convex portion is brought into contact with the main electrode.
4. The semiconductor device according to claim 1 , wherein the metal plate also has at least one convex portion which protrudes toward a side of the connector also on a surface of the metal plate which faces the connector.
5. The semiconductor device according to claim 1 , wherein the main electrode of the semiconductor element is divided into a plurality of regions, and
the metal plate has a plurality of the convex portions formed at positions corresponding to the plurality of respective main regions of the main electrode.
6. The semiconductor device according to claim 1 , wherein the semiconductor element further has a sub electrode on a surface of the semiconductor element on which the main electrode is formed, and
a cutout is formed in the metal plate so as to avoid the sub electrode.