Edge ring, plasma processing apparatus, and manufacturing method of edge ring

1. An edge ring comprising:

a first edge ring integrally formed by silicon carbide and configured to surround a periphery of a substrate provided in a processing container of a plasma processing apparatus, a top surface of the first edge ring being a contact surface with plasma generated inside the processing container; and

a second edge ring formed by silicon and configured to surround the periphery of the substrate, a top surface of the second edge ring being bonded to a side opposite to the contact surface of the first edge ring, and a bottom surface of the second edge ring contacting with an electrostatic chuck,

wherein the second edge ring is divided into a plurality of parts in a circumferential direction, and a groove is formed between each of the plurality of parts such that adjacent parts among the plurality of parts of the second edge ring have a predetermined distance therebetween in the circumferential direction, and

wherein the groove is formed by side walls of the adjacent parts of the second edge ring, and a bottom wall of the first edge ring that serves as a ceiling wall when viewed in a vertical cross section.

2. The edge ring according to claim 1 , wherein the first edge ring covers a side surface of the second edge ring.

3. The edge ring according to claim 2 , wherein the first edge ring covers a side surface of an outer circumferential side of the second edge ring.

4. The edge ring according to claim 2 , wherein the first edge ring covers a side surface of an inner circumferential side of the second edge ring.

5. The edge ring according to claim 3 , wherein the first edge ring covers a side surface of an inner circumferential side of the second edge ring.

6. A plasma processing apparatus comprising:

a processing container;

a stage disposed inside the processing container and configured to place a substrate thereon; and

an edge ring configured to surround a periphery of the substrate placed on the stage,

wherein the edge ring includes:

a first edge ring integrally formed by silicon carbide, a top surface of the first edge ring being a contact surface with plasma generated inside the processing container; and

a second edge ring formed by silicon, a top surface of the second edge ring being bonded to a side opposite to the contact surface of the first edge ring, and a bottom surface of the second edge ring contacting with an electrostatic chuck,

wherein the second edge ring is divided into a plurality of parts in a circumferential direction, and a groove is formed between each of the plurality of parts such that adjacent parts of the second edge ring have a predetermined distance therebetween in the circumferential direction, and

wherein the groove is formed by side walls of the adjacent parts of the second edge ring, and a bottom wall of the first edge ring that serves as a ceiling wall when viewed in a vertical cross section.

7. An edge ring comprising:

a first edge ring integrally formed by silicon carbide and configured to surround a periphery of a substrate provided in a processing container of a plasma processing apparatus, a top surface of the first edge ring being a contact surface with plasma generated inside the processing container;

a second edge ring formed by a material in which the silicon carbide and silicon are mixed in a predetermined ratio and configured to surround the periphery of the substrate, a top surface of the second edge ring being bonded to a side opposite to the contact surface of the first edge ring; and

a third edge ring formed by the silicon and configured to surround the periphery of the substrate, a top surface of the third edge ring being bonded to a bottom surface of the second edge ring and a bottom surface of the third edge ring contacting with an electrostatic chuck,

wherein the third edge ring is divided into a plurality of parts in a circumferential direction, and a groove is formed between each of the plurality of parts such that adjacent parts of the third edge ring have a predetermined distance therebetween in the circumferential direction, and

wherein the groove is formed by side walls of the adjacent parts of the third edge ring, and a bottom wall of the first edge ring that serves as a ceiling wall when viewed in a vertical cross section.

8. The edge ring according to claim 7 , wherein the second edge ring is formed by a material in which the silicon carbide and the silicon are mixed in a discretely changing ratio.

9. The edge ring according to claim 7 , wherein the second edge ring is formed by a material in which the silicon carbide and the silicon are mixed in a continuously changing ratio.

10. The edge ring according to claim 7 , wherein the first edge ring covers a side surface of the second edge ring, and the second edge ring covers a side surface of an outer circumferential side of the third edge ring.

11. The edge ring according to claim 10 , wherein the first edge ring covers a side surface of an outer circumferential side of the second edge ring, and the second edge ring covers a side surface of an outer circumferential side of the third edge ring.

12. The edge ring according to claim 10 , wherein the first edge ring covers a side surface of an inner circumferential side of the second edge ring, and the second edge ring covers a side surface of an inner circumferential side of the third edge ring.

13. The edge ring according to claim 11 , wherein the first edge ring covers a side surface of an inner circumferential side of the second edge ring, and the second edge ring covers a side surface of an inner circumferential side of the third edge ring.

14. The edge ring according to claim 1 , wherein the plurality of parts of the second edge ring has a same shape from each other, and is evenly disposed in the circumferential direction.