Gate structures for semiconductor devices
The structure of a semiconductor device with different gate structures configured to provide ultra-low threshold voltages and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes first and second nanostructured channel regions in first and second nanostructured layers, respectively, and first and second gate-all-around (GAA) structures surrounding the first and second nanostructured channel regions, respectively. The first GAA structure includes an Al-based gate stack with a first gate dielectric layer, an Al-based n-type work function metal layer, a first metal capping layer, and a first gate metal fill layer. The second GAA structure includes an Al-free gate stack with a second gate dielectric layer, an Al-free p-type work function metal layer, a metal growth inhibition layer, a second metal capping layer, and a second gate metal fill layer.
1. A semiconductor device, comprising:
a substrate;
a fin structure disposed on the substrate;
a stack of nanostructured layers disposed on the fin structure;
an epitaxial region surrounding first portions of the nanostructured layers; and
a gate-all-around (GAA) structure surrounding second portions of the nanostructured layers,
wherein the GAA structure comprises a gate dielectric layer, a work function metal layer, a silicon-based metal growth inhibition layer, and a gate metal fill layer.
2. The semiconductor device of claim 1 , wherein the work function metal layer comprises an aluminum (Al)-free material.
3. The semiconductor device of claim 1 , wherein the silicon-based metal growth inhibition layer is disposed between the work function metal layer and the gate metal fill layer.
4. The semiconductor device of claim 1 , wherein the silicon-based metal growth inhibition layer is in physical contact with the work function metal layer.
5. The semiconductor device of claim 1 , wherein the silicon-based metal growth inhibition layer comprises a higher deposition selectivity on a metal surface than on a dielectric surface.
6. The semiconductor device of claim 1 , wherein the silicon-based metal growth inhibition layer comprises an amorphous silicon or a polycrystalline silicon.
7. The semiconductor device of claim 1 , wherein the silicon-based metal growth inhibition layer comprises a thickness ranging from about 0.5 nm to about 2 nm.
8. The semiconductor device of claim 1 , wherein the work function metal layer is in physical contact with the gate dielectric layer.
9. The semiconductor device of claim 1 , further comprising a metal capping layer disposed between the silicon-based metal growth inhibition layer and the gate metal fill layer.
10. The semiconductor device of claim 1 , wherein the work function metal layer has a work function value closer to a valence band energy than a conduction band energy of the nanostructured layers.
11. The semiconductor device of claim 1 , further comprising an oxygen diffusion barrier layer disposed between the silicon-based layer and the gate metal fill layer.
12. A semiconductor device, comprising:
a substrate;
a fin structure disposed on the substrate;
a source/drain region disposed on the fin structure;
nanostructured channel regions disposed on the fin structure and adjacent to the source/drain region; and
a gate structure surrounding nanostructured channel regions, wherein the gate structure comprises:
an oxide layer surrounding the nanostructured channel regions;
a gate dielectric layer disposed on the oxide layer;
a p-type work function metal layer disposed on the gate dielectric layer;
a silicon-based layer disposed on the p-type work function metal layer; and
a gate metal fill layer.
13. The semiconductor device of claim 12 , wherein the p-type work function metal layer comprises an aluminum (Al)-free metal.
14. The semiconductor device of claim 12 , wherein the silicon-based layer comprises an amorphous silicon layer or a polycrystalline silicon layer.
15. A semiconductor device, comprising:
a substrate;
first and second nanostructured layers disposed on the substrate;
first and second source/drain regions surrounding the first and second nanostructured layers, respectively; and
first and second gate structures surrounding the first and second nanostructured layers, respectively,
wherein the first gate structure comprises a first gate dielectric layer, a silicon-based layer, a p-type work function metal layer, and a first gate metal fill layer, and
wherein the second gate structure comprises a second gate dielectric layer, an n-type work function metal layer, and a second gate metal fill layer.
16. The semiconductor device of claim 15 , wherein the p-type work function metal layer comprises an aluminum (Al)-free material, and wherein the n-type work function metal layer comprises an Al-based material.
17. The semiconductor device of claim 15 , wherein the silicon-based layer comprises a thickness ranging from about 0.5 nm to about 2 nm.
18. The semiconductor device of claim 15 , wherein the silicon-based layer comprises an amorphous silicon layer or a polycrystalline silicon layer.
19. The semiconductor device of claim 15 , further comprising a metal capping layer disposed between the silicon-based layer and the first gate metal fill layer.
20. The semiconductor device of claim 15 , further comprising an oxygen diffusion barrier layer disposed between the n-type work function metal layer and the second gate metal fill layer.