Function and orientation identification for input/output (I/O) operative touch sensor device (TSD)
A touch sensor device (TSD) includes TSD electrodes associated with a surface of the TSD. Also, an overlay that includes marker electrode(s) is also associated with at least a portion of the surface of the TSD. The TSD also includes drive-sense circuits (DSCs) operably coupled to the plurality of TSD electrodes. A DSC is configured to provide a TSD electrode signal to a TSD electrode and simultaneously to sense a change of the TSD electrode signal based on a change of impedance of the TSD electrode caused by capacitive coupling between the TSD electrode and the marker electrode(s) of the overlay. Processing module(s) is configured to process a digital signal generated by the DSC to determine characteristic(s) of the overlay that is associated with the at least a portion of the surface of the TSD.
1. A touch sensor device (TSD) comprising:
a plurality of TSD electrodes associated with a surface of the TSD;
a plurality of drive-sense circuits (DSCs) operably coupled to the plurality of TSD electrodes, wherein:
a first DSC of the plurality of DSCs is operably coupled to receive a first reference signal and to generate a first TSD electrode signal based on the first reference signal, wherein, when enabled, the first DSC configured to:
provide the first TSD electrode signal to a first TSD electrode of the plurality of TSD electrodes and simultaneously to sense a change of the first TSD electrode signal based on a change of impedance of the first TSD electrode; and
generate a first digital signal that is representative of the change of impedance of the first TSD electrode;
a second DSC of the plurality of DSCs is operably coupled to receive a second reference signal and to generate a second TSD electrode signal based on the second reference signal, wherein, when enabled, the second DSC configured to:
provide the second TSD electrode signal to a second TSD electrode of the plurality of TSD electrodes and simultaneously to sense a change of the second TSD electrode signal based on a change of impedance of the second TSD electrode; and
generate a second digital signal that is representative of the change of impedance of the second TSD electrode;
memory that stores operational instructions; and
one or more processing modules operably coupled to the plurality of DSCs and the memory, wherein, when enabled, the one or more processing modules configured to execute the operational instructions to:
process the first digital signal and the second digital signal to determine the change of impedance of the first TSD electrode and the change of impedance of the second TSD electrode.
2. The TSD of claim 1 , wherein, when enabled, the one or more processing modules further configured to execute the operational instructions to:
generate the first reference signal and provide the first reference signal to the first DSC; and
generate the second reference signal and provide the second reference signal to the second DSC.
3. The TSD of claim 1 , wherein:
the change of impedance of the first TSD electrode caused by capacitive coupling between the first TSD electrode and an object being associated with at least a portion of the surface of the TSD.
4. The TSD of claim 3 , wherein:
the object includes a stylus or a pen.
5. The TSD of claim 3 , wherein:
the object includes a pen;
the first TSD electrode signal includes a first frequency;
the second TSD electrode signal includes a second frequency; and
the pen configured to transmit another signal having a third frequency.
6. The TSD of claim 3 , wherein:
the TSD configured to operate in accordance with a self mode, a mutual mode, and a pen mode.
7. The TSD of claim 3 , wherein:
the object includes a finger of a user; and
the change of impedance of the first TSD electrode caused by capacitive coupling between the first TSD electrode and the finger of a user being associated with the at least a portion of the surface of the TSD.
8. The TSD of claim 1 , wherein:
the first TSD electrode signal includes a first frequency; and
the second TSD electrode signal includes a second frequency.
9. The TSD of claim 1 , wherein:
the first TSD electrode of the plurality of TSD electrodes is implemented in a first orientation; and
the second TSD electrode of the plurality of TSD electrodes is implemented in a second orientation.
10. The TSD of claim 1 , wherein the first DSC of the plurality of DSCs further comprises:
a power source circuit operably coupled via a single line to the first TSD electrode, wherein, when enabled, the power source circuit is configured to provide an analog signal via the single line coupling to the first TSD electrode, and wherein the analog signal includes at least one of a DC (direct current) component or an oscillating component; and
a power source change detection circuit operably coupled to the power source circuit, wherein, when enabled, the power source change detection circuit is configured to:
detect an effect on the analog signal that is based on an electrical characteristic of the first TSD electrode; and
generate the first digital signal that is representative of the change of impedance of the first TSD electrode.
11. The TSD of claim 10 further comprising:
the power source circuit including a power source to source at least one of a voltage or a current via the single line to the first TSD electrode; and
the power source change detection circuit including:
a power source reference circuit configured to provide at least one of a voltage reference or a current reference; and
a comparator configured to compare the at least one of the voltage or the current provided via the single line to the first TSD electrode to the at least one of the voltage reference or the current reference to produce the analog signal.
12. A touch sensor device (TSD) comprising:
a plurality of TSD electrodes associated with a surface of the TSD;
a plurality of drive-sense circuits (DSCs) operably coupled to the plurality of TSD electrodes, wherein:
a first DSC of the plurality of DSCs is operably coupled to receive a first reference signal and to generate a first TSD electrode signal based on the first reference signal, wherein, when enabled, the first DSC configured to:
provide the first TSD electrode signal to a first TSD electrode of the plurality of TSD electrodes and simultaneously to sense a change of the first TSD electrode signal based on a change of impedance of the first TSD electrode; and
generate a first digital signal that is representative of the change of impedance of the first TSD electrode;
a second DSC of the plurality of DSCs is operably coupled to receive a second reference signal and to generate a second TSD electrode signal based on the second reference signal, wherein, when enabled, the second DSC configured to:
provide the second TSD electrode signal to a second TSD electrode of the plurality of TSD electrodes and simultaneously to sense a change of the second TSD electrode signal based on a change of impedance of the second TSD electrode; and
generate a second digital signal that is representative of the change of impedance of the second TSD electrode;
memory that stores operational instructions; and
one or more processing modules operably coupled to the plurality of DSCs and the memory, wherein, when enabled, the one or more processing modules configured to execute the operational instructions to:
generate the first reference signal and provide the first reference signal to the first DSC;
generate the second reference signal and provide the second reference signal to the second DSC;
process the first digital signal and the second digital signal to determine the change of impedance of the first TSD electrode and the change of impedance of the second TSD electrode; and
process the first digital signal and the second digital signal to determine a second impedance signature that corresponds to another change of impedance of the first TSD electrode and another change of impedance of the second TSD electrode.
13. The TSD of claim 12 , wherein:
the change of impedance of the first TSD electrode caused by capacitive coupling between the first TSD electrode and an object being associated with at least a portion of the surface of the TSD.
14. The TSD of claim 13 , wherein:
the object includes a stylus or a pen.
15. The TSD of claim 13 , wherein:
the object includes a pen;
the first TSD electrode signal includes a first frequency;
the second TSD electrode signal includes a second frequency; and
the pen configured to transmit another signal having a third frequency.
16. The TSD of claim 13 , wherein:
the object includes a finger of a user; and
the change of impedance of the first TSD electrode caused by capacitive coupling between the first TSD electrode and the finger of a user being associated with the at least a portion of the surface of the TSD.
17. The TSD of claim 12 , wherein:
the first TSD electrode signal includes a first frequency; and
the second TSD electrode signal includes a second frequency.
18. The TSD of claim 12 , wherein:
the change of impedance of the second TSD electrode caused by capacitive coupling between the second TSD electrode and an object being associated with at least a portion of the surface of the TSD.
19. The TSD of claim 12 , wherein the first DSC of the plurality of DSCs further comprises:
a power source circuit operably coupled via a single line to the first TSD electrode, wherein, when enabled, the power source circuit is configured to provide an analog signal via the single line coupling to the first TSD electrode, and wherein the analog signal includes at least one of a DC (direct current) component or an oscillating component; and
a power source change detection circuit operably coupled to the power source circuit, wherein, when enabled, the power source change detection circuit is configured to:
detect an effect on the analog signal that is based on an electrical characteristic of the first TSD electrode; and
generate the first digital signal that is representative of the change of impedance of the first TSD electrode.
20. The TSD of claim 19 further comprising:
the power source circuit including a power source to source at least one of a voltage or a current via the single line to the first TSD electrode; and
the power source change detection circuit including:
a power source reference circuit configured to provide at least one of a voltage reference or a current reference; and
a comparator configured to compare the at least one of the voltage or the current provided via the single line to the first TSD electrode to the at least one of the voltage reference or the current reference to produce the analog signal.