Dynamic temperature control of substrate support in substrate processing system
A temperature-controlled substrate support for a substrate processing system includes a substrate support located in the processing chamber. The substrate support includes N zones and N resistive heaters, respectively, where N is an integer greater than one. A temperature sensor is located in one of the N zones. A controller is configured to calculate N resistances of the N resistive heaters during operation and to adjust power to N−1 of the N resistive heaters during operation of the substrate processing system in response to the temperature measured in the one of the N zones by the temperature sensor, the N resistances of the N resistive heaters, and N−1 resistance ratios.
1. A temperature-controlled substrate support for a substrate processing system comprising:
a substrate support including N zones and N resistive heaters, respectively, where N is an integer greater than one, and a temperature sensor located in one of the N zones; and
a controller configured to:
calculate N resistances of the N resistive heaters during operation; and
adjust power to N−1 of the N resistive heaters during operation of the substrate processing system in response to:
the temperature measured in the one of the N zones by the temperature sensor;
the N resistances of the N resistive heaters; and
N−1 resistance ratios.
2. The temperature-controlled substrate support of claim 1 , wherein the N−1 resistance ratios are determined by measuring the N resistances of the N resistive heaters in the N zones, respectively, when the substrate support is at a uniform temperature and dividing N−1 of the N resistances of N−1 of the N zones by one of the N resistances corresponding to the one of the N zones.
3. The temperature-controlled substrate support of claim 2 , wherein the uniform temperature corresponds to ambient temperature.
4. The temperature-controlled substrate support of claim 1 , wherein the N−1 zones do not include temperature sensors.
5. The temperature-controlled substrate support of claim 1 , wherein the controller calculates the N resistances of the N resistive heaters during operation by:
monitoring N voltages supplied to the N resistive heaters, respectively; and
calculating the N resistances based on the N voltages supplied to the N resistive heaters, respectively.
6. The temperature-controlled substrate support of claim 1 , wherein the controller calculates the N resistances of the N resistive heaters during operation by:
monitoring N currents supplied to the N resistive heaters, respectively; and
calculating the N resistances based on the N currents supplied to the N resistive heaters, respectively.
7. The temperature-controlled substrate support of claim 1 , wherein the controller calculates the N resistances of the N resistive heaters during operation by:
monitoring N currents and N voltages supplied to the N resistive heaters, respectively; and
calculating the N resistances based on the N currents and the N voltages supplied to the N resistive heaters, respectively.
8. The temperature-controlled substrate support of claim 1 , wherein the controller is configured to control power to the one of the N zones based on the temperature measured by the temperature sensor.
9. A method of manufacturing a temperature-controlled substrate support for a substrate processing system, comprising:
embedding N resistive heaters in N zones of a substrate support;
embedding a temperature sensor in one of the N zones of the substrate support;
measuring N resistances of the N resistive heaters in the N zones of the substrate support;
determining N−1 resistance ratios based on the N resistances;
connecting a controller to the N resistive heaters and the temperature sensor; and
programming the controller to control temperature in N−1 of the N resistive heaters in N−1 of the N zones, respectively, during operation of the substrate processing system in response to:
a measured temperature in the one of the N zones;
the N resistances of the N resistive heaters; and
the N−1 resistance ratios.
10. The method of claim 9 , wherein the N−1 resistance ratios are calculated by:
determining the N resistances of the N resistive heaters, respectively, when the substrate support is at a uniform temperature; and
dividing the N−1 of the N resistances of the N−1 of the N zones by one of the N resistances corresponding to the one of the N zones.
11. The method of claim 10 , wherein the uniform temperature corresponds to ambient temperature.
12. The method of claim 9 , wherein the N−1 of the N zones do not include temperature sensors.
13. The method of claim 9 , wherein measuring the N resistances of the N resistive heaters includes:
monitoring N voltages supplied to the N resistive heaters, respectively; and
calculating the N resistances based on the N voltages supplied to the N resistive heaters, respectively.
14. The method of claim 9 , wherein measuring the N resistances of the N zones includes:
monitoring N currents supplied to the N resistive heaters, respectively; and
calculating the N resistances based on the N currents supplied to the N resistive heaters, respectively.
15. The method of claim 9 , wherein measuring the N resistances of the N zones during operation includes:
monitoring N currents and N voltages supplied to N resistive heaters, respectively; and
calculating the N resistances based on the N currents and the N voltages supplied to the N resistive heaters, respectively.
16. A method for controlling temperatures of zones in a substrate support of a substrate processing system, comprising:
measuring temperature in one of N zones of a substrate support during operation of the substrate processing system using a temperature sensor located in the one of the N zones, where N is an integer greater than one;
measuring N resistances of N resistive heaters located in the N zones, respectively, during operation of the substrate processing system; and
adjusting power to N−1 of the N resistive heaters in N−1 of the N zones, respectively, during operation of the substrate processing system to control temperatures in N−1 of the N zones in response to:
the measured temperature in the one of the N zones;
the N resistances of the N resistive heaters; and
N−1 resistance ratios.
17. The method of claim 16 , wherein the N−1 resistance ratios are calculated by:
determining the N resistances of the N resistive heaters, respectively, when the substrate support is at a uniform temperature; and
dividing N−1 of the N resistances of N−1 of the N zones by one of the N resistances corresponding to the one of the N zones.
18. The method of claim 17 , wherein the uniform temperature corresponds to ambient temperature.
19. The method of claim 16 , wherein the N−1 of the N zones do not include temperature sensors.
20. The method of claim 16 , wherein measuring the N resistances of the N resistive heaters includes:
monitoring N voltages supplied to the N resistive heaters, respectively; and
calculating the N resistances based on the N voltages supplied to the N resistive heaters, respectively.
21. The method of claim 16 , wherein measuring the N resistances of the N zones includes:
monitoring N currents supplied to the N resistive heaters, respectively; and
calculating the N resistances based on the N currents supplied to the N resistive heaters, respectively.
22. The method of claim 16 , wherein measuring the N resistances of the N zones during operation includes:
monitoring N currents and N voltages supplied to N resistive heaters, respectively; and
calculating the N resistances based on the N currents and the N voltages supplied to the N resistive heaters, respectively.
23. The method of claim 16 , further comprising controlling power to the one of the N zones based on the temperature measured by the temperature sensor.