Method for forming package structure with lid
A method for forming a package structure is provided, including forming an interconnect structure over a carrier substrate and forming a semiconductor die over a first side of the interconnect structure. A removable film is formed over the semiconductor die. The method includes forming a first stacked die package structure over the first side of the interconnect structure. A top surface of the removable film is higher than a top surface of the first stacked die package structure. The method includes forming a package layer, removing a portion of the package layer to expose a portion of the removable film, removing the removable film to form a recess, forming a lid structure over the semiconductor die and the first stacked die package structure. The lid structure has a main portion and a protruding portion disposed in the recess and extending from the main portion.
1. A method for forming a package structure, comprising:
forming an interconnect structure over a carrier substrate;
forming a semiconductor die over a first side of the interconnect structure, wherein a removable film is formed over the semiconductor die;
forming a first stacked die package structure over the first side of the interconnect structure, wherein a top surface of the removable film is higher than a top surface of the first stacked die package structure;
forming a package layer over the semiconductor die and the first stacked die package structure;
removing a portion of the package layer to expose a portion of the removable film;
removing the removable film to form a recess over the semiconductor die; and
forming a lid structure over the semiconductor die and the first stacked die package structure, wherein the lid structure has a main portion and a protruding portion extending from the main portion, and the protruding portion is disposed in the recess.
2. The method for forming the package structure as claimed in claim 1 , further comprising:
removing a portion of the first stacked die package structure during removing the portion of the package layer, such that a portion of the first stacked die package structure is exposed.
3. The method for forming the package structure as claimed in claim 1 , further comprising:
adhering the removable film and the first stacked die package structure to a frame tape; and
removing the carrier substrate.
4. The method for forming the package structure as claimed in claim 3 , further comprising:
removing a portion of the interconnect structure, wherein the interconnect structure comprises a plurality of conductive layers in a plurality of dielectric layers, and a portion of the conductive layers is exposed after removing the portion of the interconnect structure.
5. The method for forming the package structure as claimed in claim 1 , further comprising:
forming an adhesive layer over the semiconductor die and the first stacked die package structure, wherein a portion of the adhesive layer is lower than the top surface of the first stacked die package structure.
6. A method for forming a package structure, comprising:
forming a semiconductor die over a first side of an interconnect structure, wherein the semiconductor die has a first height;
forming a first stacked die package structure over the first side of the interconnect structure, wherein the first stacked die package structure has a second height, and the second height is greater than the first height;
forming an underfill layer below the first stacked die package structure, wherein the underfill layer covers sidewalls of the semiconductor die;
forming a package layer between the semiconductor die and the first stacked die package structure, wherein the package layer is in contact with the sidewalls of the semiconductor die; and
forming a lid structure over the semiconductor die and the first stacked die package structure, wherein the lid comprises a main portion and a protruding portion extending from the main portion, and the protruding portion is directly over the semiconductor die.
7. The method for forming the package structure as claimed in claim 6 , wherein the underfill layer continuously extends below the semiconductor die and the first stacked die package structure.
8. The method for forming the package structure as claimed in claim 6 , wherein the package layer is separated from the first stacked die package structure by the underfill layer.
9. The method for forming the package structure as claimed in claim 6 , further comprising forming an adhesive layer, wherein the adhesive layer continuously extends between the semiconductor die and the lid structure, and between the first stacked die package structure and the lid structure.
10. The method for forming the package structure as claimed in claim 9 , wherein the first stacked die package structure is separated from the adhesive layer.
11. The method for forming the package structure as claimed in claim 9 , wherein the first stacked die package structure is in contact with the adhesive layer.
12. The method for forming the package structure as claimed in claim 11 , wherein the adhesive layer is in contact with a top surface and a side surface of the package layer, and the top surface and the side surface of the package layer face different directions.
13. The method for forming the package structure as claimed in claim 9 , wherein a distance between the semiconductor die and a first bottom surface of the protruding portion facing the semiconductor die is less than a distance between the first stacked die package structure and a second bottom surface of the lid structure facing the first stacked die package structure.
14. The method for forming the package structure as claimed in claim 6 , wherein the semiconductor die is wider than the protruding portion.
15. The method for forming the package structure as claimed in claim 6 , wherein the underfill layer further covers sidewalls of the first stacked die package structure.
16. A method for forming a package structure, comprising:
forming a semiconductor die over a first side of an interconnect structure;
forming a first stacked die package structure over the first side of the interconnect structure;
forming a second stacked die package structure over the first side of the interconnect structure, wherein the semiconductor die is between the first stacked die package structure and the second stacked die package structure;
forming an underfill layer between the semiconductor die and the first stacked die package structure; and
forming a package layer over the underfill layer, wherein an interface is between the underfill layer and the package layer, and the interface is lower than a top surface of the semiconductor die.
17. The method for forming the package structure as claimed in claim 16 , further comprising forming a lid structure over the semiconductor die and the first stacked die package structure, wherein the lid structure has a T-shaped structure.
18. The method for forming the package structure as claimed in claim 17 , wherein an extending portion of the lid structure extends between the first stacked die package structure and the second stacked die package structure.
19. The method for forming the package structure as claimed in claim 16 , wherein the package layer is in contact with a top surface of the first stacked die package structure, and is separated from a side surface of the first stacked die package structure by the underfill layer.
20. The method for forming the package structure as claimed in claim 16 , wherein an angle between the interface and a side surface of the semiconductor die is an acute angle.