IP Library › Granted Patent US 11,916,514
Granted Patent B2
US 11,916,514 · App. 16/719,925 · Granted Feb 27, 2024

Radio-frequency apparatus with multi-band wideband balun and associated methods

Inventors: Zoltan Vida (Budapest, HU); Attila L Zolomy (Budapest, HU)
Assignee: Silicon Laboratories Inc.
H03D7/1458H03D9/06H03H7/383H03H7/422H03D2200/0023H03H7/425H03H2007/386
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Quick Facts
Patent No.
US 11,916,514
App. No.
16/719,925
Granted
Feb 27, 2024
Kind
B2
Abstract

An apparatus includes an RF apparatus, and a wideband multi-band matching balun. The wideband multi-band matching balun includes a multi-band balun, which includes at least one three-element frequency-dependent resonator (TEFDR). The wideband multi-band matching balun further includes a differential-to-differential matching circuit coupled to the RF apparatus. The differential-to-differential matching circuit includes at least one TEFDR.

Claims (32)

1. An apparatus, comprising:

a radio-frequency (RF) apparatus; and

a wideband multi-band matching balun using passive components to provide simultaneous balun and impedance matching functionality in multiple bands, the wideband multi-band matching balun comprising:

a multi-band balun, the multi-band balun comprising at least one three-element frequency-dependent resonator (TEFDR); and

a differential-to-differential matching circuit coupled to the RF apparatus that provides impedance matching between the RF apparatus and the multi-band balun, the differential-to-differential matching circuit comprising at least one TEFDR,

wherein the at least one TEFDR in the multi-band balun, the differential-to-differential matching circuit, or both, provides functionality of an inductor having a frequency-dependent inductance or a capacitor having a capacitance having a frequency-dependent capacitance.

2. The apparatus according to claim 1 , wherein the multi-band balun comprises four TEFDRs, and wherein the differential-to-differential matching circuit comprises two TEFDRs.

3. The apparatus according to claim 2 , wherein the differential-to-differential matching circuit further comprises an inductor and a capacitor coupled to the two TEFDRs, wherein the inductor and the capacitor are coupled in series.

4. The apparatus according to claim 1 , wherein the RF apparatus comprises receive circuitry or transmit circuitry.

5. The apparatus according to claim 1 , wherein the RF apparatus comprises both receive circuitry and transmit circuitry.

6. The apparatus according to claim 1 , wherein the at least one TEFDR in the multi-band balun comprises (a) two inductors coupled to one capacitor; or (b) one inductor coupled to two capacitors.

7. The apparatus according to claim 1 , wherein the at least one TEFDR in the differential-to-differential matching circuit comprises (a) two inductors coupled to one capacitor; or (b) one inductor coupled to two capacitors.

8. The apparatus according to claim 1 , wherein the at least one three-element frequency-dependent resonator in the multi-band balun or in the differential-to-differential matching circuit realizes an inductor having an inductance that varies as a function of frequency.

9. The apparatus according to claim 1 , wherein the at least one three-element frequency-dependent resonator in the multi-band balun or in the differential-to-differential matching circuit realizes a capacitor having a capacitance that varies as a function of frequency.

10. An apparatus, comprising:

a radio-frequency (RF) apparatus; and

a wideband multi-band matching balun using passive components to provide simultaneous balun and impedance matching functionality in multiple bands, the wideband multi-band matching balun comprising:

a multi-band balun, the multi-band balun comprising four three-element frequency-dependent resonator (TEFDRs); and

a differential-to-differential matching circuit coupled to the RF apparatus, the differential-to-differential matching circuit comprising:

a series inductor-capacitor (LC) network; and

a pair of TEFDRs, comprising all fixed-value components, coupled to a series LC network,

wherein at least one TEFDR in the multi-band balun, the differential-to-differential matching circuit, or both, provides functionality of an inductor having a frequency-dependent inductance or a capacitor having a capacitance having a frequency-dependent capacitance.

11. The apparatus according to claim 10 , wherein any of the TEFDRs realizes an inductor having an inductance that varies as a function of frequency or a capacitor having a capacitance that varies as a function of frequency.

12. The apparatus according to claim 10 , wherein any of the TEFDRs comprises either (a) two capacitor and an inductor, or (b) two inductors and a capacitor.

13. The apparatus according to claim 10 , wherein the multi-band balun operates in a lower band of frequency and in a higher band of frequency comprising frequencies higher than frequencies of the lower band of frequency, wherein the lower band of frequency comprises 310-510 MHz, ±10%.

14. The apparatus according to claim 13 , wherein the higher band of frequency comprises 780-950 MHz, ±10%.

15. A method of operating an apparatus that includes a radio-frequency (RF) apparatus, the method comprising using a wideband multi-band matching balun using passive components to provide simultaneous balun and impedance matching functionality in multiple bands, wherein the wideband multi-band matching balun includes a multi-band balun coupled to a differential-to-differential matching circuit, wherein the multi-band balun comprises at least one three-element frequency-dependent resonator (TEFDR), and wherein the differential-to-differential matching circuit comprises at least one TEFDR, wherein the at least one TEFDR in the multi-band balun, the differential-to-differential matching circuit, or both, provides functionality of an inductor having a frequency-dependent inductance or a capacitor having a capacitance having a frequency-dependent capacitance.

16. The method according to claim 15 , wherein the multi-band balun comprises four TEFDRs, and wherein the differential-to-differential matching circuit comprises two TEFDRs.

17. The method according to claim 15 , wherein the differential-to-differential matching circuit further comprises an inductor and a capacitor coupled to the two TEFDRs, wherein the inductor and the capacitor are coupled in series.

18. The method according to claim 15 , wherein any of the TEFDRs comprises (a) two inductors coupled to one capacitor; or (b) one inductor coupled to two capacitors.

19. The method according to claim 15 , wherein the at least one three-element frequency-dependent resonator in the multi-band balun or in the differential-to-differential matching circuit realizes an inductor having an inductance that varies as a function of frequency.

20. The method according to claim 15 , wherein the at least one three-element frequency-dependent resonator in the multi-band balun or in the differential-to-differential matching circuit realizes a capacitor having a capacitance that varies as a function of frequency.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 18, 2019
From: VIDA, ZOLTAN; ZÓLOMY, ATTILA
To: SILICON LABORATORIES INC.
Reel/Frame 051326/0998 →
Continuity (4)
Continuation In Part 15845327 · Dec 18, 2017
Continuation In Part 15845369 · Dec 18, 2017
Continuation In Part 15823319 · Nov 27, 2017
Related Publication 20200127605A1 · Apr 23, 2020