IP Library › Granted Patent US 11,928,025
Granted Patent B2
US 11,928,025 · App. 17/883,027 · Granted Mar 12, 2024

Memory device protection

Inventors: Tony M. Brewer (Plano, TX); Brent Keeth (Boise, ID)
Assignee: Micron Technology, Inc.
G06F11/1068G06F11/076G06F11/0772G06F11/1016G06F11/1076
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Quick Facts
Patent No.
US 11,928,025
App. No.
17/883,027
Granted
Mar 12, 2024
Kind
B2
Abstract

Systems, apparatuses, and methods related to memory device protection are described. A quantity of errors within a memory device can be determined and the determined quantity can be used to further determine whether to utilize single or multiple memory devices for an error correction and/or detection operation. Multiple memory devices need not be utilized for the error correction and/or detection operation unless a quantity of errors within the memory device exceeds a threshold quantity.

Claims (49)

1. An apparatus, comprising:

a plurality of memory devices; and

a controller coupled to the plurality of memory devices via a plurality of respective channels, the controller configured to:

perform, using first error correction code (ECC) data, an error detection operation on host data read from a first portion of the plurality of memory devices; and

responsive to the error detection operation indicating a quantity of errors on the host data:

read, from a second portion of the plurality of memory devices, second ECC data different than the first ECC data and that was not read to the controller for the error detection operation; and

to perform, using the second ECC data, an error correction operation to correct the quantity of errors indicated through the error detection operation:

read other host data from a third portion of the plurality of memory devices; and

perform an XOR operation among the other host data and the second ECC data to recover the host data.

2. The apparatus of claim 1 , wherein the first portion and the third portion of the plurality of memory devices correspond to different channels of the plurality of channels.

3. The apparatus of claim 1 , wherein the first portion and the third portion of the plurality of memory devices correspond to a same channel of the plurality of channels.

4. The apparatus of claim 1 , wherein the controller is configured to read the first ECC data from the first portion of the plurality of memory devices as well.

5. The apparatus of claim 1 , wherein the host data is read from a first bank of the first portion of the plurality of memory devices and the first ECC data is read from a second bank of the first portion of the plurality of memory devices.

6. The apparatus of claim 1 , wherein:

the first portion of the plurality of memory devices comprises one or more memory devices coupled to a first channel; and

the second portion of the plurality of memory devices comprises one or more memory devices coupled to a second channel.

7. The apparatus of claim 1 , wherein:

the first portion of the plurality of memory devices comprises one or more first memory devices coupled to the plurality of channels; and

the second portion of the plurality of memory devices comprises one or more second memory devices coupled to the plurality of channels.

8. An apparatus, comprising:

a plurality of memory devices; and

a controller coupled to the plurality of memory devices via a plurality of respective channels, the controller configured to:

read, from at least a first portion of a first group of memory devices of the plurality of memory devices, host data and first error correction code (ECC) data;

perform an error detection operation using the first ECC data to indicate whether the host data includes an amount of errors; and

responsive to the error detection operation indicating the amount of errors in the host data;

read, from a second group of the memory device of the plurality of memory devices, second ECC data different than the first ECC data; and

to perform an error correction operation to correct the amount of errors using the second ECC data:

read other host data from a second portion of the first group of memory devices; and

perform an XOR operation among the other host data and the second ECC data to recover the host data.

9. The apparatus of claim 8 , wherein the controller is configured to read, along with the host data and the first ECC data and from the first group of memory devices, third ECC data to correct a quantity of errors on the host data that does not exceed a threshold quantity.

10. The apparatus of claim 9 , wherein the controller is configured to perform, prior to the performance of the error detection operation and using the third ECC data, an error correction operation to correct a quantity of errors on the host data that does not exceed the threshold quantity.

11. The apparatus of claim 8 , wherein the controller is configured to:

read the host data via data input/output (DQ) pins; and

read the first ECC data via data mask (DM) pins.

12. The apparatus of claim 8 , wherein the error correction operation performed using the second ECC data corresponds to a redundant array of independent disks (RAID) operation.

13. The apparatus of claim 8 , wherein the first and second memory devices are coupled to same channels of the plurality of channels.

14. The apparatus of claim 8 , wherein the first and second memory devices are coupled to different channels of the plurality of channels.

15. An apparatus, comprising:

a plurality of memory devices; and

a controller coupled to the plurality of memory devices via a plurality of respective channels, the controller configured to:

read, in response to a read command to access host data, the host data and first error correction code (ECC) data from a first memory device of the plurality of memory devices;

perform, using the first ECC data, a first error correction operation on the host data to correct a quantity of errors not exceeding a threshold quantity;

perform an error detection operation on the host data using cyclic redundancy check (CRC);

read, from a second memory device of the plurality of memory devices, second ECC data different than the first ECC data; and

to perform a second error correction operation using the second ECC data on the host data to correct a quantity of errors exceeding the threshold quantity and that were not correctable during the first error correction operation:

read other host data from a third memory device of the plurality of memory devices; and

perform an XOR operation among the other host data and the second ECC data to recover the host data.

16. The apparatus of claim 15 , wherein the first and second memory devices are coupled to a same channel of the plurality of channels.

17. The apparatus of claim 15 , wherein the first and second memory devices are coupled to different channels of the plurality of channels.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 8, 2022
From: BREWER, TONY M; KEETH, BRENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 060744/0996 →
Continuity (2)
Continuation 17158874 · Jan 26, 2021
Related Publication 20220382631A1 · Dec 1, 2022