Low warpage curing methodology by inducing curvature
Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes: applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool; placing the substrate on a pedestal in a curing chamber, wherein the substrate has an expected post-cure deflection in a first direction; inducing a curvature on the substrate in a direction opposite the first direction; and curing the substrate by heating the substrate in the curing chamber.
1. A method for reducing warpage of a substrate, comprising:
applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool;
placing the substrate on a pedestal in a curing chamber, wherein the pedestal has a central region that is raised with respect to a peripheral region of the pedestal, and wherein the substrate has an expected post-cure deflection in a first direction;
inducing a curvature on the substrate in a direction opposite the first direction applying a force against the substrate to conform the substrate to the pedestal, wherein applying the force comprises placing a ring that is weighted on an outer about 1 to about 3 mm of the substrate; and
curing the substrate by heating the substrate in the curing chamber.
2. The method of claim 1 , wherein curing the substrate comprises:
precuring the substrate in a precure chamber by placing the pedestal and the substrate on a heater plate;
subsequently moving the pedestal and the substrate to a furnace; and
heating the substrate in the furnace.
3. The method of claim 2 , wherein at least one of:
during curing, the furnace is heated to a temperature of about 165 to about 190 degrees Celsius; or
during precuring, the substrate is heated to about 105 to about 125 degrees Celsius.
4. The method of claim 1 , wherein inducing the curvature on the substrate comprises elevating a central region of the substrate about 1 to about 3 mm with respect to an outer edge of the substrate.
5. The method of claim 1 , further comprising measuring a temperature of the substrate during curing.
6. The method of claim 1 , wherein inducing the curvature further comprises vacuum chucking the substrate to the pedestal.
7. The method of claim 1 , wherein inducing the curvature further comprises placing a center plate on the pedestal, and placing the substrate on the center plate.
8. The method of claim 1 , wherein the curing chamber is a microwave chamber and curing the substrate comprises:
placing the substrate on the pedestal in the microwave chamber; and
directing microwave energy at the substrate to heat the substrate.
9. The method of claim 8 , wherein the substrate is heated to about 145 to about 165 degrees Celsius in the microwave chamber to cure the substrate.
10. The method of claim 1 , wherein heating the substrate in the curing chamber is performed for a duration of about 1 to about 2 hours.
11. A method for reducing warpage of a substrate, comprising:
applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool;
placing the substrate on a center plate that is disposed on pedestal in a curing chamber, wherein the center plate acts as a fulcrum, and wherein the substrate has an expected post-cure deflection in a first direction;
inducing a curvature on the substrate so that the central region of the substrate is elevated about 1 to about 3 mm with respect to the outer edge of the substrate; and
curing the substrate by heating the substrate in the curing chamber.
12. The method of claim 11 , wherein the curing chamber is a microwave chamber, and the pedestal is made of quartz.
13. The method of claim 11 , wherein inducing the curvature on the substrate comprises:
placing a ring along the outer edge of the substrate to curve the outer edge towards the pedestal.
14. The method of claim 13 , further comprising placing one or more weights on the ring to provide additional force on the outer edge of the substrate.
15. A curing chamber for reducing warpage of a substrate with an epoxy layer, comprising:
a chamber body having an interior volume;
a pedestal that is transferable and that supports the substrate disposed in the interior volume, wherein the pedestal is configured to induce a curvature on the substrate;
a ring disposed along an outer periphery of the substrate and configured to curve an outer edge of the substrate towards the pedestal, wherein the ring is entirely disposed above the pedestal; and
a heat source configured to heat the substrate to a temperature of about 100 to about 200 degrees Celsius.
16. The curing chamber of claim 15 , further comprising a vacuum source coupled to the pedestal and configured to vacuum chuck the substrate to the pedestal.
17. The curing chamber of claim 15 , wherein the heat source comprises a microwave source, wherein the pedestal is made of quartz, and wherein the ring is made of quartz.
18. The curing chamber of claim 17 , further comprising a glass plate disposed between the substrate and the pedestal at a central region of the substrate to elevate the central region with respect to the outer edge of the substrate.
19. The curing chamber of claim 15 , wherein the curing chamber is a furnace and the heat source is configured to direct hot gas to the interior volume.
20. The curing chamber of claim 15 , further comprising one or more weights disposed on the ring to provide additional force on the outer edge of the substrate.