Integrated circuit devices and methods of manufacturing the same

1. An integrated circuit device comprising a capacitor structure, wherein the capacitor structure includes:

a bottom electrode on a substrate;

a supporter on the bottom electrode;

a dielectric layer on the bottom electrode; and

a top electrode on the dielectric layer,

wherein the bottom electrode includes:

a base electrode layer that extends in a first direction that is perpendicular to a top surface of the substrate; and

a conductive capping layer arranged between a first side surface of the base electrode layer and the dielectric layer, and arranged between a top surface of the base electrode layer and the dielectric layer,

wherein the conductive capping layer of the bottom electrode includes niobium nitride.

2. The integrated circuit device of claim 1 , wherein the base electrode layer of the bottom electrode includes titanium and nitrogen, and wherein the dielectric layer includes hafnium, zirconium, and niobium.

3. The integrated circuit device of claim 1 , wherein the base electrode layer of the bottom electrode is spaced apart from the dielectric layer.

4. The integrated circuit device of claim 1 , wherein the base electrode layer of the bottom electrode includes a second side surface that is covered by the supporter and that is adjacent to the first side surface of the base electrode layer of the bottom electrode, and the first side surface of the base electrode layer of the bottom electrode is covered by the conductive capping layer of the bottom electrode.

5. The integrated circuit device of claim 4 , wherein the first side surface of the base electrode layer of the bottom electrode is recessed in a second direction that is perpendicular to the first direction with respect to the second side surface of the base electrode layer of the bottom electrode.

6. The integrated circuit device of claim 1 , wherein the capacitor structure includes an interfacial layer that is between the dielectric layer and the top electrode, wherein the interfacial layer includes niobium oxide, and wherein the top electrode includes titanium nitride.

7. The integrated circuit device of claim 1 , wherein the conductive capping layer of the bottom electrode covers the top surface and the first side surface of the base electrode layer of the bottom electrode, and wherein the conductive capping layer of the bottom electrode does not extend onto the supporter.

8. The integrated circuit device of claim 4 , wherein the conductive capping layer of the bottom electrode is not arranged between the second side surface of the base electrode layer of the bottom electrode and the supporter.

9. The integrated circuit device of claim 4 , wherein the dielectric layer is not in direct contact with the top surface, the first side surface and the second side surface of the base electrode layer of the bottom electrode.

10. An integrated circuit device comprising a capacitor structure, wherein the capacitor structure includes:

a bottom electrode on a substrate;

a supporter on the bottom electrode;

a dielectric layer on the bottom electrode;

a top electrode on the dielectric layer; and

an interfacial layer between the dielectric layer and the top electrode,

wherein the bottom electrode includes:

a base electrode layer extending in a first direction that is perpendicular to a top surface of the substrate; and

a conductive capping layer arranged between a first side surface of the base electrode layer and the dielectric layer, and arranged between a top surface of the base electrode layer and the dielectric layer, and

wherein the conductive capping layer of the bottom electrode includes niobium nitride, the conductive capping layer of the bottom electrode does not extend onto the supporter, the dielectric layer includes hafnium, zirconium and niobium, and the interfacial layer includes niobium oxide.

11. The integrated circuit device of claim 10 , wherein the base electrode layer of the bottom electrode includes a second side surface that is adjacent to the first side surface, and wherein the conductive capping layer of the bottom electrode is not arranged between the second side surface of the base electrode layer of the bottom electrode and the supporter.

12. The integrated circuit device of claim 11 , wherein the dielectric layer is not in direct contact with the top surface, the first side surface, and the second side surface of the base electrode layer of the bottom electrode.

13. The integrated circuit device of claim 10 , wherein the base electrode layer of the bottom electrode includes titanium and nitrogen, and wherein the top electrode includes titanium nitride.

14. The integrated circuit device of claim 10 , wherein the base electrode layer of the bottom electrode is spaced apart from the dielectric layer.

15. The integrated circuit device of claim 10 , wherein the base electrode layer of the bottom electrode includes a second side surface that is covered by the supporter, wherein the first side surface of the base electrode layer of the bottom electrode is covered by the conductive capping layer of the bottom electrode, and wherein the first side surface and the second side surface of the base electrode layer of the bottom electrode are coplanar.

16. The integrated circuit device of claim 10 , wherein the base electrode layer of the bottom electrode includes a second side surface that is covered by the supporter, wherein the first side surface of the base electrode layer of the bottom electrode is covered by the conductive capping layer of the bottom electrode, and wherein the first side surface of the base electrode layer of the bottom electrode is recessed in a second direction that is perpendicular to the first direction with respect to the second side surface of the base electrode layer of the bottom electrode.

17. An integrated circuit device comprising a capacitor structure, wherein the capacitor structure includes:

a bottom electrode on a substrate;

a supporter on the bottom electrode;

a dielectric layer on the bottom electrode; and

a top electrode on the dielectric layer,

wherein the bottom electrode includes:

a base electrode layer including a top surface, a first side surface and a second side surface that is adjacent to the first side surface; and

a conductive capping layer including niobium nitride, and covering the first side surface and the top surface of the base electrode layer,

wherein the supporter covers the second side surface of the base electrode layer of the bottom electrode, and

wherein the dielectric layer is not in direct contact with the top surface, the first side surface, and the second side surface of the base electrode layer of the bottom electrode.

18. The integrated circuit device of claim 17 , wherein the conductive capping layer of the bottom electrode does not extend onto the supporter, and wherein the conductive capping layer of the bottom electrode is not arranged between the second side surface of the base electrode layer of the bottom electrode and the supporter.

19. The integrated circuit device of claim 17 , wherein the capacitor structure includes an interfacial layer that is between the dielectric layer and the top electrode,

wherein the interfacial layer includes niobium oxide,

wherein the base electrode layer of the bottom electrode includes titanium and nitrogen,

wherein the top electrode includes titanium nitride, and

wherein the dielectric layer includes hafnium, zirconium, and niobium.

20. The integrated circuit device of claim 17 , wherein the first side surface of the base electrode layer of the bottom electrode is recessed in a direction that is parallel to a top surface of the substrate with respect to the second side surface of the base electrode layer of the bottom electrode.