Image sensors
An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.
1. An image sensor, comprising:
a plurality of unit pixels, wherein each of the plurality of unit pixels includes
a photodiode;
a transfer transistor connected between the photodiode and a floating diffusion area;
a reset transistor connected between a source voltage node and the floating diffusion area;
a selection transistor; and
at least two source follower transistors between the source voltage node and the selection transistor, each of the at least two source follower transistors having a gate connected to the floating diffusion area,
wherein the selection transistor is between the at least two source follower transistors and an output voltage node,
wherein the at least two source follower transistors are electrically connected between the source voltage node and the selection transistor in parallel such that
the image sensor is configured to cause a voltage to be applied from the source voltage node to the selection transistor through each of the at least two source follower transistors in parallel.
2. The image sensor of claim 1 , wherein at least two of sources or at least two of drains of the at least two source follower transistors share an impurity area.
3. The image sensor of claim 1 , wherein adjacent source follower transistors of the at least two source follower transistors share a source area.
4. The image sensor of claim 1 , wherein adjacent source follower transistors of the at least two source follower transistors share a drain area.
5. The image sensor of claim 1 , wherein the reset transistor and an adjacent source follower transistor of the at least two source follower transistors share a drain area.
6. The image sensor of claim 1 , wherein the selection transistor and an adjacent source follower transistor of the at least two source follower transistors share a source area.
7. The image sensor of claim 1 , wherein
the selection transistor, the at least two source follower transistors and the reset transistor are disposed in a transistor area adjacent to the photodiode in a first direction, and
the selection transistor, the at least two source follower transistors, and the reset transistor extends in a linear sequence along an axis that extends along a second direction perpendicular to the first direction, the axis extending through each transistor of the selection transistor, the at least two source follower transistors, and the reset transistor.
8. The image sensor of claim 7 , wherein a source area and a drain area of each transistor of the selection transistor, the at least two source follower transistors, and the reset transistor extend along the second direction, and the source area and the drain area of the transistor are isolated from direct contact with each other.
9. An image sensor, comprising:
a plurality of unit pixels, each of the plurality of unit pixels including
a photodiode;
a transfer transistor connected to the photodiode;
a reset transistor connected to the transfer transistor;
at least two source follower transistors connected to the reset transistor; and
at least one selection transistor connected to the at least two source follower transistors,
wherein the at least two source follower transistors are connected between the reset transistor and the at least one selection transistor in parallel such that
the image sensor is configured to cause a voltage to be applied to the at least one selection transistor through each of the at least two source follower transistors in parallel.
10. The image sensor of claim 9 , wherein a gate of each source follower transistor of the at least two source follower transistors, and a source of the reset transistor are electrically connected to each other, such that the gate of each source follower transistor, and the source of the reset transistor have a common potential.
11. The image sensor of claim 9 , wherein a total quantity of transistors, of the at least two source follower transistors and the at least one selection transistor, is an even quantity and is at least four transistors.
12. The image sensor of claim 9 , wherein
the photodiode and the transfer transistor are dispose in a pixel area,
the reset transistor, the at least two source follower transistors, and the at least one selection transistor are disposed a transistor area adjacent to the pixel area in a first direction,
the reset transistor, the at least two source follower transistors, and the at least one selection transistor extending along an edge of the pixel area in a linear sequence that is aligned with an axis that extends along a second direction perpendicular to the first direction, and
the axis extends through each transistor of the reset transistor, the at least two source follower transistors, and the at least one selection transistor.
13. The image sensor of claim 12 , a source area and a drain area of each of the reset transistor, the at least two source follower transistors, and the at least one selection transistor are alternately arranged along the second direction.
14. The image sensor of claim 9 , wherein adjacent source follower transistors of the at least two source follower transistors share a source area or a drain area.
15. An image sensor, comprising:
a plurality of unit pixels, each of the plurality of unit pixels including
a photodiode;
a transfer transistor connected to the photodiode;
a reset transistor, a source of the reset transistor connected to a source of the transfer transistor;
three source follower transistors, a drain of each source follower transistor of the three source follower transistors connected to a drain of the reset transistor; and
a selection transistor, a source of the selection transistor connected to a source of each source follower transistor of the three source follower transistors such that
the image sensor is configured to cause a voltage to be applied to the selection transistor through each source follower transistor of the three source follower transistors in parallel,
wherein the three source follower transistors are connected between the drain of the reset transistor and the source of the selection transistor in parallel.
16. The image sensor of claim 15 , wherein a gate of each source follower transistor of the three source follower transistors are electrically connected to the source of the reset transistor and the source of the transfer transistor.
17. The image sensor of claim 15 , wherein
the three source follower transistors include a first source follower transistor, a second source follower transistor, and a third source follower transistor between the first source follower transistor and the second source follower transistor, and
the first source follower transistor and the third source follower transistor share a source area.
18. The image sensor of claim 17 , wherein the second source follower transistor and the third source follower transistor share a drain area.
19. The image sensor of claim 15 , wherein the reset transistor, the three source follower transistors, and the selection transistor extending along in a linear sequence along a horizontal direction.