Backside contact structures and fabrication for metal on both sides of devices
An apparatus including a circuit structure including a device stratum including a plurality of devices including a first side and an opposite second side; and a metal interconnect coupled to at least one of the plurality of devices from the second side of the device stratum. A method including forming a transistor device including a channel between a source region and a drain region and a gate electrode on the channel defining a first side of the device; and forming an interconnect to one of the source region and the drain region from a second side of the device.
1. An integrated circuit structure, comprising:
a semiconductor body having a top, a bottom, a first side and a second side, the first side and the second side between the top and the bottom, and the first side opposite the second side;
a gate structure at least over the top and extending along the first side and the second side of the semiconductor body;
a first source or drain structure at a first side of the gate structure;
a second source or drain structure at a second side of the gate structure, the second side opposite the first side; and
a conductive contact vertically below and in contact with the first source or drain structure.
2. The integrated circuit structure of claim 1 , wherein the conductive contact is further along a first side of the first source or drain structure.
3. The integrated circuit structure of claim 2 , wherein the conductive contact is further along a second side of the first source or drain structure.
4. The integrated circuit structure of claim 1 , wherein the gate structure extends along only a portion of the first side and the second side of the semiconductor body.
5. The integrated circuit structure of claim 1 , further comprising:
a second conductive contact vertically above and in contact with the second source or drain structure.
6. The integrated circuit structure of claim 5 , further comprising:
an epitaxial semiconductor structure vertically between the second conductive contact and the second source or drain structure.
7. The integrated circuit structure of claim 1 , further comprising:
a second conductive contact vertically above and in contact with the first source or drain structure.
8. The integrated circuit structure of claim 1 , further comprising:
a second conductive contact vertically below and in contact with the second source or drain structure.
9. The integrated circuit structure of claim 1 , further comprising:
a second conductive contact vertically above and in contact with the first source or drain structure; and
a third conductive contact vertically below and in contact with the second source or drain structure.
10. A computing device, comprising:
a memory; and
an integrated circuit die coupled to the memory, the integrated circuit die comprising an integrated circuit structure, the integrated circuit structure comprising:
a semiconductor body having a top, a bottom, a first side and a second side, the first side and the second side between the top and the bottom, and the first side opposite the second side;
a gate structure at least over the top and extending along the first side and the second side of the semiconductor body;
a first source or drain structure at a first side of the gate structure;
a second source or drain structure at a second side of the gate structure, the second side opposite the first side; and
a conductive contact vertically below and in contact with the first source or drain structure.
11. The system of claim 10 , further comprising:
a graphics processing unit coupled to the integrated circuit die.
12. The system of claim 10 , further comprising:
an antenna coupled to the integrated circuit die.
13. The system of claim 10 , further comprising:
a display coupled to the integrated circuit die.
14. The system of claim 10 , further comprising:
a battery coupled to the integrated circuit die.
15. The system of claim 10 , further comprising:
a global positioning system coupled to the integrated circuit die.
16. The system of claim 10 , further comprising:
a compass coupled to the integrated circuit die.
17. The system of claim 10 , wherein the conductive contact is further along a first side of the first source or drain structure.
18. The system of claim 17 , wherein the conductive contact is further along a second side of the first source or drain structure.
19. The system of claim 10 , wherein the gate structure extends along only a portion of the first side and the second side of the semiconductor body.
20. The system of claim 10 , wherein the integrated circuit structure further comprises:
a second conductive contact vertically above and in contact with the second source or drain structure.