HEMT and method of fabricating the same
An HEMT includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer. The composition of the first III-V compound layer is different from the composition of the second III-V compound layer. A third III-V compound layer is disposed on the second III-V compound layer. The first III-V compound layer and the third III-V compound layer are composed of the same group III-V elements. The third III-V compound layer includes a body and numerous finger parts. Each of the finger parts is connected to the body. All finger parts are parallel to each other and do not contact each other. A source electrode, a drain electrode and a gate electrode are disposed on the first III-V compound layer.
1. A high electron mobility transistor (HEMT), comprising:
a first III-V compound layer;
a second III-V compound layer disposed on the first III-V compound layer, wherein a composition of the first III-V compound layer is different from a composition of the second III-V compound layer;
a third III-V compound layer disposed on the second III-V compound layer, wherein the third III-V compound layer comprises a body and a plurality of finger parts, each of the finger parts is connected to the body, all finger parts are parallel to each other and do not contact each other, and wherein the body comprises a P-type III-V compound layer and the plurality of finger parts comprise an undoped III-V compound layer;
a source electrode disposed at one side of the body and contacting the first III-V compound layer, wherein the plurality of finger parts are only disposed between the body and the source electrode and the plurality of finger parts do not contact the source electrode;
a drain electrode disposed at another side of the body and contacting the first III-V compound layer; and
a gate electrode disposed directly on the body.
2. The HEMT of claim 1 , wherein the first III-V compound layer comprises gallium nitride or aluminum gallium nitride, the third III-V compound layer comprises gallium nitride or aluminum gallium nitride, the second III-V compound layer comprises aluminum gallium nitride, aluminum indium nitride, aluminum indium gallium nitride or aluminum indium.
3. The HEMT of claim 1 , wherein there are no N-type dopants within the plurality of finger parts.
4. The HEMT of claim 1 , wherein the plurality of finger parts extend along a direction which moves away from the body.