Electronic device and method for manufacturing electronic device
A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.
1. An electronic device including a semiconductor memory,
wherein the semiconductor memory includes:
a row line;
a column line intersecting the row line; and
a memory cell located between the row line and the column line, the memory cell including a first carbon electrode material and a second carbon electrode material which is formed on a surface of the first carbon electrode material and has a thickness of 100 Å or less; and
wherein the thickness of the second carbon electrode material is less than a thickness of the first carbon electrode material.
2. The electronic device of claim 1 , wherein the second carbon electrode material has a surface roughness of 30 Å or less.
3. The electronic device of claim 1 , wherein the first carbon electrode material and the second carbon electrode material have the same resistivity.
4. The electronic device of claim 1 , wherein the first carbon electrode material and the second carbon electrode material have different resistivities.
5. The electronic device of claim 1 , wherein the memory cell further includes a variable resistance layer and a switching layer, and
wherein the first carbon electrode material and the second carbon electrode material are interposed between the variable resistance layer and the switching layer.
6. The electronic device of claim 1 , wherein the first carbon electrode material and the second carbon electrode material are electrically connected to the row line.
7. The electronic device of claim 1 , wherein the first carbon electrode material and the second carbon electrode material are electrically connected to the column line.