IP Library › Granted Patent US 11,955,352
Granted Patent B2
US 11,955,352 · App. 17/141,670 · Granted Apr 9, 2024

Substrate processing apparatus

Inventors: Hiroki Sakurai (Koshi, JP); Daisuke Goto (Koshi, JP); Takashi Nakazawa (Koshi, JP); Yusuke Takamatsu (Koshi, JP); Yusuke Hashimoto (Koshi, JP)
Assignee: TOKYO ELECTRON LIMITED
H01L21/67051H01L21/6708H01L21/68764
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Quick Facts
Patent No.
US 11,955,352
App. No.
17/141,670
Granted
Apr 9, 2024
Kind
B2
Abstract

A substrate processing apparatus includes: a temperature raising part for raising a temperature of a first sulfuric acid; a mixing part for mixing the first sulfuric acid where the temperature is raised by the temperature raising part with a moisture-containing liquid to generate a mixed solution; and a discharging part for discharging the mixed solution onto a substrate inside a substrate processing part. The mixing part includes: a joining portion where a sulfuric acid supply line through which the first sulfuric acid where the temperature is raised by the temperature raising part flows and a liquid supply line through which the first sulfuric acid where the temperature is raised by the temperature raising part and the moisture-containing liquid flows are joined; and a reaction suppression mechanism for suppressing a reaction between the first sulfuric acid and the moisture-containing liquid in the joining portion.

Claims (15)

1. A substrate processing apparatus, comprising:

a heater configured to raise a temperature of a sulfuric acid supplied from a sulfuric acid source;

a sulfuric acid supply line configured to supply the sulfuric acid, whose temperature has been raised by the heater, to a mixing part;

a liquid supply line configured to supply a moisture-containing liquid from a moisture-containing liquid source to the mixing part;

the mixing part configured to mix the sulfuric acid from the sulfuric acid supply line with the moisture-containing liquid from the liquid supply line to generate a mixed solution; and

a nozzle configured to discharge the mixed solution onto a substrate inside a substrate processing part,

wherein the mixing part includes:

a joining portion where the sulfuric acid supply line and the liquid supply line are joined; and

a reaction suppression mechanism including a U-shaped pipe buffer portion, which is provided in the liquid supply line, and configured to suppress a reaction between the sulfuric acid, whose temperature has been raised by the heater, and the moisture-containing liquid in the joining portion, and

wherein the U-shaped pipe buffer portion has an uppermost portion provided at a position higher than the joining portion.

2. The substrate processing apparatus of claim 1 , wherein the uppermost portion of the U-shaped pipe buffer portion is provided at the position higher than the joining portion by a diameter or more of the liquid supply line in the joining portion.

3. The substrate processing apparatus of claim 1 , wherein the U-shaped pipe buffer portion is spaced apart from a mixed-solution supply line, which supplies the mixed solution from the joining portion to the nozzle, by a diameter or more of the mixed-solution supply line in the joining portion.

4. The substrate processing apparatus of claim 1 , wherein the moisture-containing liquid is a pure water.

5. The substrate processing apparatus of claim 1 , wherein the moisture-containing liquid includes a hydrogen peroxide solution.

6. The substrate processing apparatus of claim 1 , wherein the moisture-containing liquid includes a functional water.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 6, 2021
From: SAKURAI, HIROKI; GOTO, DAISUKE; NAKAZAWA, TAKASHI; TAKAMATSU, YUSUKE; HASHIMOTO, YUSUKE
To: TOKYO ELECTRON LIMITED
Reel/Frame 054825/0272 →
Priority Claims (1)
JP 2020-000926 · Jan 7, 2020 · national
Continuity (1)
Related Publication 20210210363A1 · Jul 8, 2021