Semiconductor device, method of manufacturing a semiconductor device, solid-state imaging device, and electronic apparatus

1. A semiconductor device, comprising:

a semiconductor element disposed on a back surface side of a semiconductor substrate, wherein the semiconductor element comprises a photoelectric conversion film sandwiched between two transparent electrodes, and wherein an insulating film is between the semiconductor element and the semiconductor substrate;

a through-electrode that is provided through the semiconductor substrate in a depth direction of the semiconductor substrate and introduces charge obtained in the semiconductor element to a front surface side of the semiconductor substrate, wherein the through-electrode is composed of a conductor that penetrates the semiconductor substrate and a separation layer that electrically separates the conductor and the semiconductor substrate; and

an amplifier transistor disposed on the front surface side of the semiconductor substrate that outputs an electrical signal based on the charge introduced by the through- electrode, the amplifier transistor using the through-electrode as a gate electrode and including a source region and a drain region around the through-electrode, wherein the gate electrode of the amplifier transistor is electrically connected to the semiconductor element via a wire.

2. The semiconductor device according to claim 1 , wherein the through-electrode includes:

the conductor embedded in a center portion of the through-electrode, and

a side wall portion covered with a second insulating film.

3. The semiconductor device according to claim 2 , wherein a film thickness of the second insulating film that covers the side wall portion differs depending on a position of the semiconductor substrate in the depth direction.

4. The semiconductor device according to claim 1 , wherein the source region and the drain region of the amplifier transistor are each formed of a diffusion layer, wherein each diffusion layer is in a vicinity of a third insulating film, and wherein each diffusion layer is formed at a part of or over an entire region of the semiconductor substrate in the depth direction.

5. The semiconductor device according to claim 1 , further comprising:

a planar transistor that is formed on the front surface side of the semiconductor substrate, wherein a gate oxide film of the planar transistor and a gate oxide film of the amplifier transistor are different from each other in a film thickness.

6. The semiconductor device according to claim 1 , further comprising:

a planar transistor that is formed on the front surface side of the semiconductor substrate, wherein a gate oxide film of the planar transistor and a gate oxide film of the amplifier transistor are different from each other in a constituent material.

7. The semiconductor device according to claim 1 , further comprising:

a cap electrode that is formed of an electric conductor and provided at a top of the through-electrode, the cap electrode being provided to be extended to a vicinity of the source region, the drain region, or a channel region of the amplifier transistor.

8. The semiconductor device according to claim 2 , wherein the conductor includes at least one layer in a length direction and is formed of at least one type of electric conductor material.

9. The semiconductor device according to claim 8 , wherein the conductor includes a first electric conductor and a second electric conductor, the first electric conductor functioning as the gate electrode of the amplifier transistor, the second electric conductor being continuous with the first electric conductor.

10. The semiconductor device according to claim 9 , wherein the first electric conductor has a work function that sets an operation range of the amplifier transistor.

11. The semiconductor device according to claim 10 , wherein the second insulating film that covers the side wall portion of the first electric conductor is thinner than and is formed of a material having a higher dielectric constant than a material of a fourth insulating film that covers a side wall portion of the second electric conductor.

12. The semiconductor device according to claim 9 , wherein the second electric conductor has a smaller diameter than a diameter of the first electric conductor and is formed of an electrically conductive material.

13. The semiconductor device according to claim 9 , wherein the second insulating film that covers the side wall portion of the first electric conductor and a fourth insulating film that covers a side wall portion of the second electric conductor are different from each other in a film thickness.

14. The semiconductor device according to claim 13 , wherein the fourth insulating film that covers the side wall portion of the second electric conductor is formed of a low dielectric constant insulating film.

15. The semiconductor device according to claim 14 , wherein the fourth insulating film that covers the side wall portion of the second electric conductor forms a separation structure together with a vacancy that intervenes between the second electric conductor and the fourth insulating film.

16. The semiconductor device according to claim 15 , wherein a fixed charge amount that is applied to the second insulating film that covers the side wall portion of the first electric conductor and a fixed charge amount that is applied to the fourth insulating film that covers the side wall portion of the second electric conductor are different from each other.