Semiconductor package and method of manufacturing semiconductor package
A semiconductor package includes a package substrate, an interposer on the package substrate, a plurality of semiconductor devices on the interposer and spaced apart from each other, the semiconductor devices being electrically connected to the interposer, a dam structure on the interposer extending along a peripheral region of the interposer, the dam structure being spaced apart from the semiconductor devices, and a stress relief on the interposer, the stress relief including an elastic member that fills gaps between the semiconductor devices and the dam structure.
1. A semiconductor package, comprising:
an interposer;
a plurality of semiconductor devices on the interposer and spaced apart from each other, the semiconductor devices being electrically connected to the interposer;
a dam structure on the interposer extending along a peripheral region of the interposer, the dam structure being spaced apart from the semiconductor devices; and
a stress relief structure on the interposer, the stress relief structure including an elastic member that fills gaps between the semiconductor devices and the dam structure,
wherein an outer surface of the dam structure is coplanar with an outer surface of the interposer, and
wherein a height of the dam structure is smaller than a height of the semiconductor devices.
2. The semiconductor package of claim 1 , wherein a width of the dam structure is within a range of 200 μm to 400 μm.
3. The semiconductor package of claim 1 , wherein a spacing distance between the semiconductor devices and the dam structure is within a range of 500 μm to 1,000 μm.
4. The semiconductor package of claim 1 , wherein the elastic member has an elastic modulus within a range of 2.0 GPa to 8.5 GPa.
5. The semiconductor package of claim 1 , wherein the elastic member includes an epoxy material.
6. The semiconductor package of claim 1 , further comprising:
a first underfill member between the semiconductor devices and the interposer.
7. The semiconductor package of claim 6 , wherein the elastic member includes the same material as the first underfill member.
8. The semiconductor package of claim 6 , wherein the stress relief structure has increased elasticity relative to the first underfill member.
9. The semiconductor package of claim 6 , wherein the elastic member fills a gap between the semiconductor devices, and the elastic member covers lower outer surfaces of the semiconductor devices and a side surface of the first underfill member under the semiconductor devices.
10. The semiconductor package of claim 1 , wherein the dam structure includes a silicon material.
11. A semiconductor package, comprising:
an interposer, the interposer having a plurality of first and second bonding pads disposed respectively on a first surface and an opposite second surface of the interposer and electrically connected to each other;
a plurality of semiconductor devices on the first surface of the interposer and spaced apart from each other, the semiconductor devices being electrically connected to the first bonding pads;
a dam structure on the first surface of the interposer extending along a peripheral region of the interposer, the dam structure being spaced apart from the semiconductor devices; and
a stress relief structure on the first surface of the interposer including an elastic member that fills gaps between the semiconductor devices and the dam structure,
wherein an outer surface of the dam structure is coplanar with an outer surface of the interposer, and
wherein a height of the dam structure is smaller than a height of the semiconductor devices.
12. The semiconductor package of claim 11 , wherein a width of the dam structure is within a range of 200 μm to 400 μm.
13. The semiconductor package of claim 11 , wherein a spacing distance between the semiconductor devices and the dam structure is within a range of 500 μm to 1,000 μm.
14. The semiconductor package of claim 11 , further comprising:
a first underfill member between the semiconductor devices and the first surface of the interposer.
15. The semiconductor package of claim 14 , wherein the elastic member includes the same material as the first underfill member.
16. A semiconductor package, comprising:
an interposer;
a plurality of semiconductor devices on the interposer and spaced apart from each other;
a dam structure on the interposer and extending along a peripheral region of the interposer, the dam structure being spaced apart from the semiconductor devices;
a stress relief structure on the interposer including an elastic member that fills gaps between the semiconductor devices and the dam structure;
a heat slug the heat slug covering and thermally contacting the semiconductor devices,
wherein an outer surface of the dam structure is coplanar with an outer surface of the interposer,
wherein a height of the dam structure is smaller than a height of the semiconductor devices, and
wherein a width of the dam structure is within a range of 200 μm to 400 μm.
17. The semiconductor package of claim 16 , wherein the dam structure includes a silicon material.
18. The semiconductor package of claim 16 , wherein a spacing distance between the semiconductor devices and the dam structure is within a range of 500 μm to 1,000 μm.
19. The semiconductor package of claim 16 , wherein the elastic member has an elastic modulus within a range of 2.0 GPa to 8.5 GPa.
20. The semiconductor package of claim 16 , further comprising:
a first underfill member between the semiconductor devices and the interposer,
wherein the elastic member includes the same material as the first underfill member.