IP Library › Granted Patent US 11,973,001
Granted Patent B2
US 11,973,001 · App. 18/312,877 · Granted Apr 30, 2024

Semiconductor device and method of manufacture

Inventors: Shu-Shen Yeh (Taoyuan, TW); Chin-Hua Wang (New Taipei, TW); Chia-Kuei Hsu (Hsinchu, TW); Po-Yao Lin (Zhudong Township, TW); Shin-Puu Jeng (Hsinchu, TW)
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
H01L23/3675H01L21/4853H01L21/4857H01L21/4871H01L21/563H01L21/565H01L23/3128H01L23/3135H01L23/49822H01L24/16H01L25/0655H01L25/50H01L2224/16227
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Quick Facts
Patent No.
US 11,973,001
App. No.
18/312,877
Granted
Apr 30, 2024
Kind
B2
Abstract

Semiconductor devices and methods of manufacture which utilize lids in order to constrain thermal expansion during annealing are presented. In some embodiments lids are placed and attached on encapsulant and, in some embodiments, over first semiconductor dies. As such, when heat is applied, and the encapsulant attempts to expand, the lid will work to constrain the expansion, reducing the amount of stress that would otherwise accumulate within the encapsulant.

Claims (32)

1. A method of manufacturing a semiconductor device, the method comprising:

attaching a first semiconductor die to an interposer;

attaching a second semiconductor die to the interposer;

encapsulating the first semiconductor die and the second semiconductor die with an encapsulant;

grinding the encapsulant to expose a first interface between the first semiconductor die and the encapsulant and a second interface between the second semiconductor die and the encapsulant;

bonding a first lid over the first interface; and

bonding a second lid different from the first lid over the second interface.

2. The method of claim 1 , wherein the first lid has a first coefficient of thermal expansion that is less than a second coefficient of thermal expansion of the encapsulant.

3. The method of claim 1 , wherein the first lid comprises copper.

4. The method of claim 1 , wherein the second lid comprises stainless steel.

5. The method of claim 1 , wherein the first lid is aligned with at least two edges of the encapsulant.

6. The method of claim 1 , wherein the first lid extends beyond the first interface by a first distance of between about 2 mm and about 3 mm.

7. The method of claim 1 , wherein the lid has a thickness of between about 50 μm and about 500 μm.

8. A method of manufacturing a semiconductor device, the method comprising:

encapsulating a first semiconductor die, a second semiconductor die, and an interposer with an encapsulant, wherein after the encapsulating the encapsulant is aligned with a first surface of the interposer and a second surface of the first semiconductor die, the first surface perpendicular to the second surface;

bonding a first lid to the encapsulant and the first semiconductor die, the first lid being aligned with the first surface, at least a portion of a top surface of the encapsulant being exposed after the bonding the first lid; and

placing a ring around the encapsulant.

9. The method of claim 8 , wherein the ring is laterally separated from the encapsulant.

10. The method of claim 9 , wherein the ring is laterally separated from the encapsulant by a distance of between about 3 mm and about 10 mm.

11. The method of claim 9 , wherein the encapsulant comprises a first side and a second side, the ring being separated from the first side by a first distance and the ring being separated from the second side by a second distance different from the first distance.

12. The method of claim 8 , wherein the ring has a width of between about 1 mm and about 30 mm.

13. The method of claim 12 , wherein the ring has a thickness of between about 0.1 mm and about 3 mm.

14. The method of claim 8 , wherein the ring has a thickness that is larger than a combined thickness of the interposer, the encapsulant, and the first lid.

15. A method of manufacturing a semiconductor device, the method comprising:

placing an encapsulant over an interposer, the encapsulant encapsulating a first semiconductor die;

bonding a lid to both the encapsulant and the semiconductor die, the lid exposing at least a first portion of the encapsulant and a second portion of the first semiconductor die; and

placing a ring around the encapsulant, the first semiconductor die, and the lid.

16. The method of claim 15 , wherein the lid has a first coefficient of thermal expansion that is less than a second coefficient of thermal expansion of the encapsulant.

17. The method of claim 15 , wherein the lid has a triangular shape.

18. The method of claim 15 , wherein the lid comprises a single “L”-shape.

19. The method of claim 15 , wherein the lid comprises multiple “L”-shapes.

20. The method of claim 15 , wherein the lid has a circular shape.

Continuity (3)
Continuation 17246035 · Apr 30, 2021
Provisional Application 63145631 · Feb 4, 2021
Related Publication 20230274999A1 · Aug 31, 2023