Doped selective metal caps to improve copper electromigration with ruthenium liner
Embodiments of the present disclosure are related to improved methods for forming an interconnect structure in a substrate. In one implementation, the method includes forming a barrier layer on exposed surfaces of a feature in a dielectric layer, forming a liner layer on the barrier layer, forming a seed layer on the liner layer, forming a metal fill on the seed layer by a metal fill process and overburdening the feature using an electroplating process, performing a planarization process to expose a top surface of the dielectric layer, and selectively forming a cobalt-aluminum alloy cap layer on the barrier layer, the liner layer, the seed layer, and the metal fill by exposing the substrate to a cobalt-containing precursor and an aluminum-containing precursor.
1. A method for forming a structure in a substrate, comprising:
forming a barrier layer on exposed surfaces of a feature in a dielectric layer of the substrate;
forming a liner layer on the barrier layer, the liner layer comprising Ru, Pt, Pd, Os, or Ni material, wherein the Ru, Pt, Pd, Os, or Ni material of the liner layer is not present in the barrier layer;
forming a seed layer on the liner layer;
forming a metal fill on the seed layer by a metal fill process and overburdening the feature using an electroplating process;
performing a planarization process to expose a top surface of the dielectric layer; and
selectively forming a cobalt-aluminum alloy cap layer having a first cap layer of cobalt and a second cap layer of cobalt-aluminum alloy, the cobalt-aluminum alloy cap layer formed on the barrier layer, the liner layer, the seed layer, and the metal fill by exposing the substrate to a cobalt-containing precursor for forming the first cap layer and then an aluminum-containing precursor for forming the second cap layer, wherein the cobalt-aluminum alloy cap layer extends onto the liner layer.
2. The method of claim 1 , wherein the substrate is exposed to the aluminum-containing precursor and the cobalt-containing precursor in an alternating manner until a desired thickness of the cobalt-aluminum alloy cap layer is reached.
3. The method of claim 1 , wherein the substrate is exposed to the aluminum-containing precursor and the cobalt-containing precursor at the same time.
4. The method of claim 1 , wherein the liner layer comprises Ru and the seed layer comprises copper.
5. The method of claim 4 , wherein the seed layer is a pure copper.
6. The method of claim 4 , wherein the seed layer is a copper manganese (CuMn) alloy having Mn concentration of about 0.1% to about 10% in weight.
7. The method of claim 1 , wherein the seed layer is a copper aluminum (CuAl) alloy having Al concentration of about 0.1% to about 10%.
8. The method of claim 1 , wherein the metal fill is formed by a copper reflow using PVD, CVD, ALD, evaporation, or an electroplating process.
9. A method for forming a structure in a substrate, comprising:
forming a barrier layer on exposed surfaces of a feature in a dielectric layer of the substrate;
forming an Ru liner layer on the barrier layer, wherein Ru is not present in the barrier layer;
forming a copper containing seed layer on the liner layer;
forming a metal fill on the seed layer by a metal fill process and overburdening the feature using an electroplating process;
performing a planarization process to expose a top surface of the dielectric layer; and
selectively forming a cobalt-aluminum alloy cap layer on the barrier layer, the liner layer, the seed layer, and the metal fill by exposing the substrate to a cobalt-containing precursor for forming a first layer of cobalt and an aluminum-containing precursor for forming a second layer of cobalt-aluminum alloy, wherein the cobalt-aluminum alloy cap layer extends onto the liner layer, wherein the substrate is exposed to the aluminum-containing precursor and the cobalt-containing precursor in an alternating manner or at the same time until a desired thickness of the cobalt-aluminum alloy cap layer is reached.
10. The method of claim 9 , wherein the seed layer is a pure copper.
11. The method of claim 9 , wherein the seed layer is a copper manganese (CuMn) alloy having Mn concentration of about 0.1% to about 10% in weight.
12. The method of claim 9 , wherein the seed layer is a copper aluminum (CuAl) alloy having Al concentration of about 0.1% to about 10%.
13. The method of claim 9 , wherein the metal fill is formed by a copper reflow using PVD, CVD, ALD, evaporation, or an electroplating process.