Capping layer overlying dielectric structure to increase reliability
Some embodiments relate to a method for forming an integrated chip, the method includes forming a first conductive wire and a second conductive wire over a substrate. A dielectric structure is formed laterally between the first conductive wire and the second conductive wire. The dielectric structure comprises a first dielectric liner, a dielectric layer disposed between opposing sidewalls of the first dielectric liner, and a void between an upper surface of the first dielectric liner and a lower surface of the dielectric layer. A dielectric capping layer is formed along an upper surface of the dielectric structure. Sidewalls of the dielectric capping layer are aligned with sidewalls of the dielectric structure.
1. A method for forming an integrated chip, the method comprising:
forming a first conductive wire and a second conductive wire over a substrate;
forming a dielectric structure laterally between the first conductive wire and the second conductive wire, wherein the dielectric structure comprises a first dielectric liner, a dielectric layer disposed between opposing sidewalls of the first dielectric liner, and a void between an upper surface of the first dielectric liner and a lower surface of the dielectric layer, wherein a top surface of the first dielectric liner is aligned with a top surface of the dielectric layer; and
forming a dielectric capping layer along an upper surface of the dielectric structure, wherein sidewalls of the dielectric capping layer are aligned with sidewalls of the dielectric structure.
2. The method of claim 1 , wherein forming the dielectric capping layer comprises:
depositing an inhibitor layer on the first and second conductive wires; and
selectively depositing the dielectric capping layer on the upper surface of the dielectric structure with the inhibitor layer in place, wherein the inhibitor layer prevents deposition of the dielectric capping layer on the first and second conductive wires.
3. The method of claim 2 , wherein the dielectric capping layer is laterally offset from the first and second conductive wires.
4. The method of claim 1 , wherein the dielectric capping layer directly contacts the top surfaces of the first dielectric liner and the dielectric layer.
5. The method of claim 1 , wherein forming the dielectric structure comprises:
depositing the first dielectric liner over the substrate, wherein the first dielectric liner lines an opening between the first and second conductive wires;
depositing a sacrificial layer over the first dielectric liner and within the opening;
performing a thinning process on the sacrificial layer such that a segment of the sacrificial layer remains between the first and second conductive wires, wherein an upper surface of the segment is below an upper surface of the first conductive wire;
depositing a second dielectric liner over the first dielectric liner and the segment of the sacrificial layer; and
performing a removal process to remove the segment of the sacrificial layer, thereby defining the void.
6. The method of claim 5 , wherein forming the dielectric structure further comprises:
depositing the dielectric layer over the second dielectric liner; and
performing a planarization process on the first dielectric liner, the second dielectric liner, and the dielectric layer.
7. The method of claim 6 , wherein the planarization process removes portions of the first and second conductive wires.
8. The method of claim 5 , wherein the thinning process includes performing an annealing process.
9. A method for forming a semiconductor structure, comprising:
forming a plurality of conductive wires over a substrate, wherein a plurality of openings is disposed between the conductive wires;
depositing a first liner layer lining the plurality of openings;
forming a sacrificial layer over the first liner layer and between adjacent conductive wires in the plurality of conductive wires;
depositing a second liner layer over the sacrificial layer and the first liner layer;
performing a removal process with the second liner layer in place to remove the sacrificial layer, thereby forming a plurality of voids between a horizontal surface of the first liner layer and a lower surface of the second liner layer; and
selectively forming a capping layer along upper surfaces of the first and second liner layers.
10. The method of claim 9 , wherein the lower surface of the second liner layer continuously extends and contacts an upper surface of the sacrificial layer before the removal process.
11. The method of claim 9 , further comprising:
depositing a dielectric layer over the second liner layer; and
performing a planarization process on the first liner layer, the second liner layer, and the dielectric layer, wherein the capping layer is formed along an upper surface of the dielectric layer after the planarization process.
12. The method of claim 9 , further comprising:
depositing an etch stop layer over the capping layer and plurality of conductive layers; and
forming an upper conductive via over the plurality of conductive wires, wherein forming the upper conductive via comprises performing an etch process on the etch stop layer and/or the capping layer, wherein the etch stop layer is etched more quickly than the capping layer during the etching process.
13. The method of claim 9 , wherein forming the plurality of conductive wires comprises:
depositing a conductive layer over the substrate; and
performing an etching process on the conductive layer, thereby defining the plurality of openings between the conductive wires.
14. The method of claim 13 , wherein the etching process comprises a reactive-ion etching process.
15. The method of claim 9 , wherein the second liner layer continuously extends along inner sidewalls of the first liner layer, and wherein the second liner layer is formed with porosity.
16. A method of forming a semiconductor device, comprising:
forming a first dielectric layer over a substrate;
forming a conductive contact within the first dielectric layer;
forming a conductive layer over the first dielectric layer;
patterning the conductive layer to define a plurality of conductive wires such that a plurality of openings is spaced between the conductive wires;
forming a plurality of dielectric structures in the plurality of openings, wherein each dielectric structure comprises a first dielectric liner, a second dielectric liner, a second dielectric layer, and an air-gap;
selectively depositing an inhibitor layer along an upper surface of the plurality of conductive wires such that the inhibitor layer is laterally offset from the plurality of dielectric structures;
selectively depositing a dielectric capping layer along an upper surface of the plurality of dielectric structures, wherein the inhibitor layer is configured to prevent deposition of the dielectric capping layer along the upper surface of the plurality of conductive wires; and
forming a conductive via over a first conductive wire in the plurality of conductive wires.
17. The method of claim 16 , wherein forming the plurality of dielectric structures comprises:
forming the first dielectric liner over the conductive wires such that the first dielectric liner lines the plurality of openings;
depositing a sacrificial layer over the first dielectric liner, thereby filling the plurality of openings;
patterning the sacrificial layer such that a top surface of the sacrificial layer is disposed below a top surface of the conductive wires;
forming the second dielectric liner over the first dielectric liner and the sacrificial layer such that the second dielectric liner lines the plurality of openings;
performing a removal process on the sacrificial layer, thereby removing the sacrificial layer and defining a plurality of air-gaps between a bottom surface of the second dielectric liner and an upper surface of the first dielectric liner;
forming the second dielectric layer over the second dielectric liner, wherein the second dielectric layer fills the plurality of openings; and
performing a planarization process into the second dielectric layer and the plurality of conductive wires, thereby forming the plurality of dielectric structures laterally between the plurality of conductive wires.
18. The method of claim 16 , wherein the inhibitor layer is a self-assembled monolayer (SAM).
19. The method of claim 16 , wherein forming the conductive via comprises:
depositing an upper dielectric layer over the first dielectric layer;
performing an etching process on the upper dielectric layer, thereby defining a via opening over the first conductive wire, wherein during the etching process the upper dielectric layer is etched more quickly than the dielectric capping layer; and
forming the conductive via within the via opening.
20. The method of claim 19 , wherein the etching process exposes an upper surface of the first conductive wire and an upper surface of the dielectric capping layer, such that the conductive via extends from the upper surface of the dielectric capping layer, along a sidewall of the dielectric capping layer, to the upper surface of the first conductive wire.