Variable mode plasma chamber utilizing tunable plasma potential

1. A plasma processing apparatus, comprising:

a plasma chamber configured to be able to hold a plasma;

a dielectric window forming at least a portion of a wall of the plasma chamber;

a gas supply configured supply a process gas to the plasma chamber;

an inductive coupling element located proximate the dielectric window, the inductive coupling element configured to generate a plasma from the process gas in the plasma chamber when energized with radio frequency (RF) energy;

a processing chamber having a workpiece support configured to support a workpiece, the processing chamber being in fluid communication with the plasma chamber;

an electrostatic shield located between the inductive coupling element and the dielectric window, the electrostatic shield having a stray capacitance to the inductive coupling element;

a tunable reactive impedance circuit coupled between the inductive coupling element and the electrostatic shield, the tunable reactive impedance circuit configured to adjust a reactance between the inductive coupling element and the electrostatic shield between a condition of capacitive reactance and a condition of inductive reactance at a frequency of RF energy supplied to the inductive coupling element;

wherein the tunable reactive impedance circuit is operable to achieve an inductive reactance at least approximately equal to the capacitive reactance of the stray capacitance;

a voltage sensor, the voltage sensor configured to measure a voltage of the electrostatic shield; and

a controller coupled to the tunable reactive impedance circuit and a RF power generator, the controller configured to control the tunable reactive impedance circuit and the RF power generator based on a measured voltage of the electrostatic shield.

2. The plasma processing apparatus of claim 1 , wherein the tunable reactive impedance circuit comprises an inductor and a variable capacitor, wherein an inductor has an inductance of about b/(ω 2 *C A ) where ω is the frequency of RF energy supplied to the inductive coupling element, C A is a stray capacitance between the inductive coupling element and the electrostatic shield, and b is a constant greater than about 1.01.

3. The plasma processing apparatus of claim 2 , wherein the variable capacitor has a range such that the tunable reactive impedance circuit can achieve a series resonance condition between inductive coupling element and the electrostatic shield.

4. The plasma processing apparatus of claim 1 , further comprising a baffle structure configured to absorb one or more charged species from the plasma.

5. The plasma processing apparatus of claim 4 , where the baffle structure is located between the plasma chamber and the processing chamber, wherein the baffle structure has a diameter in a range of about 10% to about 70% of a diameter of the plasma chamber.

6. The plasma processing apparatus of claim 5 , wherein a center of the baffle structure is located above an approximate center of the workpiece support.

7. The plasma processing apparatus of claim 1 , further comprising a plurality of dielectric restricting elements, wherein at least two of the plurality of dielectric restricting elements are separated by a gap, wherein the gap is less than about 1 cm in width.

8. The plasma processing apparatus of claim 7 , wherein the plurality of dielectric restricting elements comprise a plurality of dielectric chamber liners mounted generally parallel to a grounded side wall of the processing chamber.

9. A plasma processing apparatus, comprising:

a plasma chamber configured to be able to hold a plasma;

a dielectric window forming at least a portion of a wall of the plasma chamber;

a gas supply configured supply a process gas to the plasma chamber;

an inductive coupling element located proximate the dielectric window, the inductive coupling element configured to generate a plasma from the process gas in the plasma chamber when energized with radio frequency (RF) energy;

a processing chamber having a workpiece support configured to support a workpiece, the processing chamber being in fluid communication with the plasma chamber;

an electrostatic shield located between the inductive coupling element and the dielectric window, the electrostatic shield grounded via a first tunable reactive impedance circuit, the first tunable reactive impedance circuit configured to have a reactance that can be adjusted in a range from an inductive reactance to a capacitive reactance;

a second tunable reactive impedance circuit coupled between the inductive coupling element and the electrostatic shield, the second tunable reactive impedance circuit configured to have a reactance that can be adjusted in a range from an inductive reactance to a capacitive reactance;

a voltage sensor, the voltage sensor configured to measure a voltage of the electrostatic shield; and

a controller coupled to the first tunable reactive impedance circuit, the second tunable reactive impedance circuit, and a RF power generator, the controller configured to control the first tunable reactive impedance circuit, the second tunable reactive impedance circuit, and a RF power generator based on a measured voltage of the electrostatic shield.

10. The plasma processing apparatus of claim 9 , wherein the first tunable reactive impedance circuit is operable to achieve a parallel resonance condition with a stray capacitance between the electrostatic shield and the ground reference.

11. The plasma processing apparatus of claim 10 , wherein the first tunable reactive impedance circuit comprises an inductor and a variable capacitor coupled in series, wherein the variable capacitor has a range operable to achieve a series resonance condition with the inductor in the first tunable impedance circuit at the frequency of the RF energy supplied to the inductive coupling element.

12. The plasma processing apparatus of claim 9 , wherein the second tunable reactive impedance circuit is operable to achieve a parallel resonance condition with a stray capacitance between the inductive coupling element to the electrostatic shield at the frequency of the RF energy supplied to the inductive coupling element.

13. The plasma processing apparatus of claim 9 , wherein the second tunable reactive impedance circuit is operable to achieve a net capacitive reactance of less than about 50 ohms between the inductive coupling element and the electrostatic shield at the frequency of the RF energy supplied to the inductive coupling element.